An ultra-wideband CMOS PA with dummy filling for reliability
Abstract
A V-band power amplifier in a bulk 65 nm CMOS technology with a peak gain 14.5 dB and 3-dB bandwidth of 28.8 GHz (50.8–79.6 GHz) is presented. The techniques to boost bandwidth and power efficiency are presented. In addition, the design of dummy filling to satisfy manufacturing density requirements while having negligible effects on performances is discussed in details. The PA features a three stage transformer coupled differential architecture with integrated input and output baluns on-chip. The PA achieves a measured saturated output power of 15.1 dBm and output 1 dB compression power of 12.9 dBm at 65 GHz. The peak power-added efficiency is 18.9%. The entire PA occupies area of 0.31 mm2, while consuming 150 mW from a 1.25 V supply.
- Authors:
-
- University of California, Davis, CA (United States)
- Fudan University, Shanghai (China)
- Publication Date:
- Research Org.:
- Univ. of California, Davis, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1534344
- Alternate Identifier(s):
- OSTI ID: 1397393
- Grant/Contract Number:
- FG02-99ER54531
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Solid-State Electronics
- Additional Journal Information:
- Journal Volume: 129; Journal Issue: C; Journal ID: ISSN 0038-1101
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; CMOS; power amplifier; transformer; V-band
Citation Formats
Chang, Yu-Ting, Ye, Yu, Xu, Hongtao, Domier, Calvin, Luhmann, N. C., and Gu, Q. Jane. An ultra-wideband CMOS PA with dummy filling for reliability. United States: N. p., 2016.
Web. doi:10.1016/j.sse.2016.11.015.
Chang, Yu-Ting, Ye, Yu, Xu, Hongtao, Domier, Calvin, Luhmann, N. C., & Gu, Q. Jane. An ultra-wideband CMOS PA with dummy filling for reliability. United States. https://doi.org/10.1016/j.sse.2016.11.015
Chang, Yu-Ting, Ye, Yu, Xu, Hongtao, Domier, Calvin, Luhmann, N. C., and Gu, Q. Jane. Fri .
"An ultra-wideband CMOS PA with dummy filling for reliability". United States. https://doi.org/10.1016/j.sse.2016.11.015. https://www.osti.gov/servlets/purl/1534344.
@article{osti_1534344,
title = {An ultra-wideband CMOS PA with dummy filling for reliability},
author = {Chang, Yu-Ting and Ye, Yu and Xu, Hongtao and Domier, Calvin and Luhmann, N. C. and Gu, Q. Jane},
abstractNote = {A V-band power amplifier in a bulk 65 nm CMOS technology with a peak gain 14.5 dB and 3-dB bandwidth of 28.8 GHz (50.8–79.6 GHz) is presented. The techniques to boost bandwidth and power efficiency are presented. In addition, the design of dummy filling to satisfy manufacturing density requirements while having negligible effects on performances is discussed in details. The PA features a three stage transformer coupled differential architecture with integrated input and output baluns on-chip. The PA achieves a measured saturated output power of 15.1 dBm and output 1 dB compression power of 12.9 dBm at 65 GHz. The peak power-added efficiency is 18.9%. The entire PA occupies area of 0.31 mm2, while consuming 150 mW from a 1.25 V supply.},
doi = {10.1016/j.sse.2016.11.015},
journal = {Solid-State Electronics},
number = C,
volume = 129,
place = {United States},
year = {Fri Nov 25 00:00:00 EST 2016},
month = {Fri Nov 25 00:00:00 EST 2016}
}
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