Morphological Control of GaN and Its Effect within Electrochemical Heterojunctions
Abstract
With morphological control through a solid source chemical vapor deposition process, GaN polycrystalline films, single-crystal nanowires, and mixed film/wires are grown on silicon to form a heterojunction that is a basis for III-V nitride device development. By contacting the GaN/Si structure to the CoCp20/ + redox pair and performing impedance spectroscopy measurements, the band diagram of this junction is built for these three configurations. This serves as a basis for understanding the electrical nature of III-V nitride/Si interfaces that exist in several photonic device technologies, especially in context of using GaN nanomaterials grown on silicon for various applications. When these junctions are exposed to low-power UV illumination in contact with the Fc/Fc+ redox pair, photocurrents of 18, 110, and 482 nA/cm2 are generated for the nanowires, mixed film/wires, and films respectively. These currents, along with the electrostatics investigated through the impedance spectroscopy, show the trends of photoconversion with GaN morphology in this junction. Furthermore, they suggest that the mixed film/wires are a promising design for solar-based applications such as photovoltaics and water splitting electrodes.
- Authors:
-
- Stanford Univ., Stanford, CA (United States)
- Publication Date:
- Research Org.:
- Energy Frontier Research Centers (EFRC) (United States). Center on Nanostructuring for Efficient Energy Conversion (CNEEC)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1397196
- Grant/Contract Number:
- SC0001060
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of the Electrochemical Society
- Additional Journal Information:
- Journal Volume: 163; Journal Issue: 10; Related Information: CNEEC partners with Stanford University (lead); Carnegie Institution at Stanford; Technical University of Denmark; Journal ID: ISSN 0013-4651
- Publisher:
- The Electrochemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 25 ENERGY STORAGE; Gallium nitride; heterojunction; silicon
Citation Formats
Parameshwaran, Vijay, and Clemens, Bruce. Morphological Control of GaN and Its Effect within Electrochemical Heterojunctions. United States: N. p., 2016.
Web. doi:10.1149/2.0411610jes.
Parameshwaran, Vijay, & Clemens, Bruce. Morphological Control of GaN and Its Effect within Electrochemical Heterojunctions. United States. https://doi.org/10.1149/2.0411610jes
Parameshwaran, Vijay, and Clemens, Bruce. Wed .
"Morphological Control of GaN and Its Effect within Electrochemical Heterojunctions". United States. https://doi.org/10.1149/2.0411610jes. https://www.osti.gov/servlets/purl/1397196.
@article{osti_1397196,
title = {Morphological Control of GaN and Its Effect within Electrochemical Heterojunctions},
author = {Parameshwaran, Vijay and Clemens, Bruce},
abstractNote = {With morphological control through a solid source chemical vapor deposition process, GaN polycrystalline films, single-crystal nanowires, and mixed film/wires are grown on silicon to form a heterojunction that is a basis for III-V nitride device development. By contacting the GaN/Si structure to the CoCp20/ + redox pair and performing impedance spectroscopy measurements, the band diagram of this junction is built for these three configurations. This serves as a basis for understanding the electrical nature of III-V nitride/Si interfaces that exist in several photonic device technologies, especially in context of using GaN nanomaterials grown on silicon for various applications. When these junctions are exposed to low-power UV illumination in contact with the Fc/Fc+ redox pair, photocurrents of 18, 110, and 482 nA/cm2 are generated for the nanowires, mixed film/wires, and films respectively. These currents, along with the electrostatics investigated through the impedance spectroscopy, show the trends of photoconversion with GaN morphology in this junction. Furthermore, they suggest that the mixed film/wires are a promising design for solar-based applications such as photovoltaics and water splitting electrodes.},
doi = {10.1149/2.0411610jes},
journal = {Journal of the Electrochemical Society},
number = 10,
volume = 163,
place = {United States},
year = {Wed Aug 17 00:00:00 EDT 2016},
month = {Wed Aug 17 00:00:00 EDT 2016}
}
Web of Science
Figures / Tables:
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