Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells

Young, David L.; Nemeth, William; LaSalvia, Vincenzo; Page, Matthew R.; Theingi, San; Aguiar, Jeffery; Lee, Benjamin G.; Stradins, Paul

doi:10.1016/j.solmat.2016.05.044

Title: Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells

Abstract

Here, we present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO₂/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm^-2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures (~100 nm thick) grown on n-Cz wafers with pH3 PIII doping gave implied open circuit voltage (iV_oc) values of 730 mV with J_o values of 2 fA/cm². Samples doped with B₂H₆ gave iV_oc values of 690 mV and J_o values of 24 fA/cm², outperforming BF₃ doping, which gave iV_oc values in the 660-680 mV range. Samples were further characterized by SIMS, photoluminescence, TEM, EELS, and post-metallization TLM to reveal micro- and macro-scopic structural, chemical and electrical information.

Authors:

Young, David L. ^[1]; Nemeth, William ^[1]; LaSalvia, Vincenzo ^[1]; Page, Matthew R. ^[1]; Theingi, San ^[1]; Aguiar, Jeffery ^[1]; Lee, Benjamin G. ^[1]; Stradins, Paul ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)

Publication Date:: Wed Jun 01 00:00:00 EDT 2016

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1328644

Alternate Identifier(s):: OSTI ID: 1396784

Report Number(s):: NREL/JA-5J00-66528
Journal ID: ISSN 0927-0248

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: Solar Energy Materials and Solar Cells

Additional Journal Information:: Journal Volume: 158; Journal Issue: P1; Journal ID: ISSN 0927-0248

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; plasma immersion ion implantation; passivated contacts; silicon; solar cells

Citation Formats


                    Young, David L., Nemeth, William, LaSalvia, Vincenzo, Page, Matthew R., Theingi, San, Aguiar, Jeffery, Lee, Benjamin G., and Stradins, Paul. Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells.  United States: N. p., 2016. 
Web.  doi:10.1016/j.solmat.2016.05.044.

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                    Young, David L., Nemeth, William, LaSalvia, Vincenzo, Page, Matthew R., Theingi, San, Aguiar, Jeffery, Lee, Benjamin G., & Stradins, Paul. Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells.  United States.  https://doi.org/10.1016/j.solmat.2016.05.044

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                    Young, David L., Nemeth, William, LaSalvia, Vincenzo, Page, Matthew R., Theingi, San, Aguiar, Jeffery, Lee, Benjamin G., and Stradins, Paul. Wed .  
"Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells".  United States.  https://doi.org/10.1016/j.solmat.2016.05.044.  https://www.osti.gov/servlets/purl/1328644.

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@article{osti_1328644,

  title        = {Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells},

  author       = {Young, David L. and Nemeth, William and LaSalvia, Vincenzo and Page, Matthew R. and Theingi, San and Aguiar, Jeffery and Lee, Benjamin G. and Stradins, Paul},

  abstractNote = {Here, we present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm-2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures (~100 nm thick) grown on n-Cz wafers with pH3 PIII doping gave implied open circuit voltage (iVoc) values of 730 mV with Jo values of 2 fA/cm2. Samples doped with B2H6 gave iVoc values of 690 mV and Jo values of 24 fA/cm2, outperforming BF3 doping, which gave iVoc values in the 660-680 mV range. Samples were further characterized by SIMS, photoluminescence, TEM, EELS, and post-metallization TLM to reveal micro- and macro-scopic structural, chemical and electrical information.},

  doi          = {10.1016/j.solmat.2016.05.044},

  journal      = {Solar Energy Materials and Solar Cells},

  number       = P1,

  volume       = 158,

  place        = {United States},

  year         = {Wed Jun 01 00:00:00 EDT 2016},

  month        = {Wed Jun 01 00:00:00 EDT 2016}

}

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Works referencing / citing this record:

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Enhanced Photocurrent Generation in Proton‐Irradiated “Giant” CdSe/CdS Core/Shell Quantum Dots
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Wang, Chao; Barba, David; Selopal, Gurpreet S.
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Title: Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells

Abstract

Citation Formats

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Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells journal, November 2015

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Design and application of ion-implanted polySi passivating contacts for interdigitated back contact c-Si solar cells
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Recombination Behavior of Photolithography-free Back Junction Back Contact Solar Cells with Carrier-selective Polysilicon on Oxide Junctions for Both Polarities
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Diffusion of Boron near Projected Ranges of B and BF ₂ Ions Implanted in Silicon
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