Development of InAlAsSb growth by MOVPE
Journal Article
·
· Journal of Crystal Growth
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- Grant/Contract Number:
- AR0000335
- OSTI ID:
- 1396739
- Journal Information:
- Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 471 Journal Issue: C; ISSN 0022-0248
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- Netherlands
- Language:
- English
Cited by: 7 works
Citation information provided by
Web of Science
Web of Science
Similar Records
Development of InAlAsSb growth by MOVPE
MOVPE and MBE growth of semiconductor thin films
Numerical simulations of epitaxial growth process in MOVPE reactor as a tool for design of modern semiconductors for high power electronics
Journal Article
·
2017
· Journal of Crystal Growth
·
OSTI ID:1533973
+3 more
MOVPE and MBE growth of semiconductor thin films
Journal Article
·
2012
· AIP Conference Proceedings
·
OSTI ID:22068989
Numerical simulations of epitaxial growth process in MOVPE reactor as a tool for design of modern semiconductors for high power electronics
Journal Article
·
2014
· AIP Conference Proceedings
·
OSTI ID:22307956
+1 more