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Title: Superheating suppresses structural disorder in layered BiI 3 semiconductors grown by the Bridgman method

Authors:
; ; ; ; ;
Publication Date:
Grant/Contract Number:
NE0000730
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 433; Journal Issue: C; Related Information: CHORUS Timestamp: 2018-09-17 23:25:43; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Sponsoring Org:
USDOE
Country of Publication:
Netherlands
Language:
English
OSTI Identifier:
1396695

Johns, Paul M., Sulekar, Soumitra, Yeo, Shinyoung, Baciak, J. E., Bliss, Mary, and Nino, Juan C.. Superheating suppresses structural disorder in layered BiI 3 semiconductors grown by the Bridgman method. Netherlands: N. p., Web. doi:10.1016/j.jcrysgro.2015.10.019.
Johns, Paul M., Sulekar, Soumitra, Yeo, Shinyoung, Baciak, J. E., Bliss, Mary, & Nino, Juan C.. Superheating suppresses structural disorder in layered BiI 3 semiconductors grown by the Bridgman method. Netherlands. doi:10.1016/j.jcrysgro.2015.10.019.
Johns, Paul M., Sulekar, Soumitra, Yeo, Shinyoung, Baciak, J. E., Bliss, Mary, and Nino, Juan C.. 2016. "Superheating suppresses structural disorder in layered BiI 3 semiconductors grown by the Bridgman method". Netherlands. doi:10.1016/j.jcrysgro.2015.10.019.
@article{osti_1396695,
title = {Superheating suppresses structural disorder in layered BiI 3 semiconductors grown by the Bridgman method},
author = {Johns, Paul M. and Sulekar, Soumitra and Yeo, Shinyoung and Baciak, J. E. and Bliss, Mary and Nino, Juan C.},
abstractNote = {},
doi = {10.1016/j.jcrysgro.2015.10.019},
journal = {Journal of Crystal Growth},
number = C,
volume = 433,
place = {Netherlands},
year = {2016},
month = {1}
}