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Title: Surfaces and interfaces governing the OMVPE growth of APD-free GaP on AsH 3 -cleaned vicinal Si(100)

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 452; Journal Issue: C; Related Information: CHORUS Timestamp: 2018-09-11 22:55:48; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Sponsoring Org:
USDOE
Country of Publication:
Netherlands
Language:
English
OSTI Identifier:
1396649

McMahon, William E., Warren, Emily L., Kibbler, Alan E., France, Ryan M., Norman, Andrew G., Reedy, Robert C., Olson, Jerry M., Tamboli, Adele C., and Stradins, Paul. Surfaces and interfaces governing the OMVPE growth of APD-free GaP on AsH 3 -cleaned vicinal Si(100). Netherlands: N. p., Web. doi:10.1016/j.jcrysgro.2016.05.014.
McMahon, William E., Warren, Emily L., Kibbler, Alan E., France, Ryan M., Norman, Andrew G., Reedy, Robert C., Olson, Jerry M., Tamboli, Adele C., & Stradins, Paul. Surfaces and interfaces governing the OMVPE growth of APD-free GaP on AsH 3 -cleaned vicinal Si(100). Netherlands. doi:10.1016/j.jcrysgro.2016.05.014.
McMahon, William E., Warren, Emily L., Kibbler, Alan E., France, Ryan M., Norman, Andrew G., Reedy, Robert C., Olson, Jerry M., Tamboli, Adele C., and Stradins, Paul. 2016. "Surfaces and interfaces governing the OMVPE growth of APD-free GaP on AsH 3 -cleaned vicinal Si(100)". Netherlands. doi:10.1016/j.jcrysgro.2016.05.014.
@article{osti_1396649,
title = {Surfaces and interfaces governing the OMVPE growth of APD-free GaP on AsH 3 -cleaned vicinal Si(100)},
author = {McMahon, William E. and Warren, Emily L. and Kibbler, Alan E. and France, Ryan M. and Norman, Andrew G. and Reedy, Robert C. and Olson, Jerry M. and Tamboli, Adele C. and Stradins, Paul},
abstractNote = {},
doi = {10.1016/j.jcrysgro.2016.05.014},
journal = {Journal of Crystal Growth},
number = C,
volume = 452,
place = {Netherlands},
year = {2016},
month = {10}
}