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Title: Single Crystal Growth of URu2Si2 by the Modified Bridgman Technique

Abstract

We describe a modified Bridgman growth technique to produce single crystals of the strongly correlated electron material URu2Si2 and its nonmagnetic analogue ThRu2Si2. Bulk thermodynamic and electrical transport measurements show that the properties of crystals produced in this way are comparable to those previously synthesized using the Czochralski or conventional molten metal flux growth techniques. For the specimens reported here, we find residual resistivity ratios RRR = ρ300K / ρ0 as large as 116 and 187 for URu2Si2 and ThRu2Si2, respectively.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1]
  1. Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
Publication Date:
Research Org.:
Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
Sponsoring Org.:
USDOE; National Science Foundation (NSF); State of Florida (United States)
OSTI Identifier:
1395955
Grant/Contract Number:  
DMR-0084173
Resource Type:
Accepted Manuscript
Journal Name:
Crystals
Additional Journal Information:
Journal Volume: 6; Journal Issue: 10; Journal ID: ISSN 2073-4352
Publisher:
MDPI
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; URu2Si2; hidden order; single crystal; molten metal flux; Bridgman

Citation Formats

Gallagher, Andrew, Nelson, William L., Chen, Kuan Wen, Besara, Tiglet, Siegrist, Theo, and Baumbach, Ryan E. Single Crystal Growth of URu2Si2 by the Modified Bridgman Technique. United States: N. p., 2016. Web. doi:10.3390/cryst6100128.
Gallagher, Andrew, Nelson, William L., Chen, Kuan Wen, Besara, Tiglet, Siegrist, Theo, & Baumbach, Ryan E. Single Crystal Growth of URu2Si2 by the Modified Bridgman Technique. United States. doi:10.3390/cryst6100128.
Gallagher, Andrew, Nelson, William L., Chen, Kuan Wen, Besara, Tiglet, Siegrist, Theo, and Baumbach, Ryan E. Sun . "Single Crystal Growth of URu2Si2 by the Modified Bridgman Technique". United States. doi:10.3390/cryst6100128. https://www.osti.gov/servlets/purl/1395955.
@article{osti_1395955,
title = {Single Crystal Growth of URu2Si2 by the Modified Bridgman Technique},
author = {Gallagher, Andrew and Nelson, William L. and Chen, Kuan Wen and Besara, Tiglet and Siegrist, Theo and Baumbach, Ryan E.},
abstractNote = {We describe a modified Bridgman growth technique to produce single crystals of the strongly correlated electron material URu2Si2 and its nonmagnetic analogue ThRu2Si2. Bulk thermodynamic and electrical transport measurements show that the properties of crystals produced in this way are comparable to those previously synthesized using the Czochralski or conventional molten metal flux growth techniques. For the specimens reported here, we find residual resistivity ratios RRR = ρ300K / ρ0 as large as 116 and 187 for URu2Si2 and ThRu2Si2, respectively.},
doi = {10.3390/cryst6100128},
journal = {Crystals},
number = 10,
volume = 6,
place = {United States},
year = {2016},
month = {10}
}

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Works referenced in this record:

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