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Title: Single Crystal Growth of URu 2Si 2 by the Modified Bridgman Technique

We describe a modified Bridgman growth technique to produce single crystals of the strongly correlated electron material URu 2Si 2 and its nonmagnetic analogue ThRu 2Si 2. Bulk thermodynamic and electrical transport measurements show that the properties of crystals produced in this way are comparable to those previously synthesized using the Czochralski or conventional molten metal flux growth techniques. For the specimens reported here, we find residual resistivity ratios RRR = ρ 300K / ρ 0 as large as 116 and 187 for URu 2Si 2 and ThRu 2Si 2, respectively.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
Publication Date:
Grant/Contract Number:
DMR-0084173
Type:
Accepted Manuscript
Journal Name:
Crystals
Additional Journal Information:
Journal Volume: 6; Journal Issue: 10; Journal ID: ISSN 2073-4352
Publisher:
MDPI
Research Org:
Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
Sponsoring Org:
USDOE; National Science Foundation (NSF); State of Florida (United States)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; URu2Si2; hidden order; single crystal; molten metal flux; Bridgman
OSTI Identifier:
1395955