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Title: In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides

Authors:
; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1395926
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 96 Journal Issue: 16; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Fan, Zhi-Qiang, Jiang, Xiang-Wei, Luo, Jun-Wei, Jiao, Li-Ying, Huang, Ru, Li, Shu-Shen, and Wang, Lin-Wang. In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.165402.
Fan, Zhi-Qiang, Jiang, Xiang-Wei, Luo, Jun-Wei, Jiao, Li-Ying, Huang, Ru, Li, Shu-Shen, & Wang, Lin-Wang. In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides. United States. doi:10.1103/PhysRevB.96.165402.
Fan, Zhi-Qiang, Jiang, Xiang-Wei, Luo, Jun-Wei, Jiao, Li-Ying, Huang, Ru, Li, Shu-Shen, and Wang, Lin-Wang. Mon . "In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides". United States. doi:10.1103/PhysRevB.96.165402.
@article{osti_1395926,
title = {In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides},
author = {Fan, Zhi-Qiang and Jiang, Xiang-Wei and Luo, Jun-Wei and Jiao, Li-Ying and Huang, Ru and Li, Shu-Shen and Wang, Lin-Wang},
abstractNote = {},
doi = {10.1103/PhysRevB.96.165402},
journal = {Physical Review B},
number = 16,
volume = 96,
place = {United States},
year = {2017},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.96.165402

Citation Metrics:
Cited by: 22 works
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