In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides

Fan, Zhi-Qiang; Jiang, Xiang-Wei; Luo, Jun-Wei; Jiao, Li-Ying; Huang, Ru; Li, Shu-Shen; Wang, Lin-Wang

doi:10.1103/PhysRevB.96.165402

Title: In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides

Authors:: Fan, Zhi-Qiang; Jiang, Xiang-Wei; Luo, Jun-Wei; Jiao, Li-Ying; Huang, Ru; Li, Shu-Shen; Wang, Lin-Wang

Publication Date:: 2017-10-02

Sponsoring Org.:: USDOE

OSTI Identifier:: 1395926

Grant/Contract Number:: AC02-05CH11231

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Name: Physical Review B Journal Volume: 96 Journal Issue: 16; Journal ID: ISSN 2469-9950

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Fan, Zhi-Qiang, Jiang, Xiang-Wei, Luo, Jun-Wei, Jiao, Li-Ying, Huang, Ru, Li, Shu-Shen, and Wang, Lin-Wang. In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides.  United States: N. p., 2017. 
Web.  doi:10.1103/PhysRevB.96.165402.

Copy to clipboard


                    Fan, Zhi-Qiang, Jiang, Xiang-Wei, Luo, Jun-Wei, Jiao, Li-Ying, Huang, Ru, Li, Shu-Shen, & Wang, Lin-Wang. In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides.  United States.  https://doi.org/10.1103/PhysRevB.96.165402

Copy to clipboard


                    Fan, Zhi-Qiang, Jiang, Xiang-Wei, Luo, Jun-Wei, Jiao, Li-Ying, Huang, Ru, Li, Shu-Shen, and Wang, Lin-Wang. Mon .  
"In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides".  United States.  https://doi.org/10.1103/PhysRevB.96.165402.

Copy to clipboard


                    
@article{osti_1395926,

  title        = {In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides},

  author       = {Fan, Zhi-Qiang and Jiang, Xiang-Wei and Luo, Jun-Wei and Jiao, Li-Ying and Huang, Ru and Li, Shu-Shen and Wang, Lin-Wang},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.96.165402},

  journal      = {Physical Review B},

  number       = 16,

  volume       = 96,

  place        = {United States},

  year         = {2017},

  month        = {10}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.96.165402

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 22 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Molecular-Scale Electronics: From Concept to Function
journal, March 2016

Xiang, Dong; Wang, Xiaolong; Jia, Chuancheng
Chemical Reviews, Vol. 116, Issue 7
DOI: 10.1021/acs.chemrev.5b00680

Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors
journal, July 2014

Kang, Jiahao; Liu, Wei; Sarkar, Deblina
Physical Review X, Vol. 4, Issue 3
DOI: 10.1103/PhysRevX.4.031005

Nanomaterials in transistors: From high-performance to thin-film applications
journal, August 2015

Franklin, A. D.
Science, Vol. 349, Issue 6249
DOI: 10.1126/science.aab2750

Large and Tunable Photothermoelectric Effect in Single-Layer MoS ₂
journal, January 2013

Buscema, Michele; Barkelid, Maria; Zwiller, Val
Nano Letters, Vol. 13, Issue 2
DOI: 10.1021/nl303321g

Controlled Synthesis of Highly Crystalline MoS ₂ Flakes by Chemical Vapor Deposition
journal, March 2013

Wang, Xinsheng; Feng, Hongbin; Wu, Yongmin
Journal of the American Chemical Society, Vol. 135, Issue 14
DOI: 10.1021/ja4013485

Improved Carrier Injection in Ultrathin-Body SOI Schottky-Barrier MOSFETs
journal, March 2007

Zhang, M.; Knoch, J.; Appenzeller, Joerg
IEEE Electron Device Letters, Vol. 28, Issue 3
DOI: 10.1109/LED.2007.891258

Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides
journal, May 2014

Jiang, Xiang-Wei; Li, Shu-Shen
Applied Physics Letters, Vol. 104, Issue 19
DOI: 10.1063/1.4878515

Spin filtering effect and magnetoresistance in zigzag 6, 6, 12-graphyne nanoribbon system
journal, September 2014

Zhou, Yan-Hong; Zeng, Jing; Chen, Ke-Qiu
Carbon, Vol. 76
DOI: 10.1016/j.carbon.2014.04.065

Probing the Dynamics of the Metallic-to-Semiconducting Structural Phase Transformation in MoS ₂ Crystals
journal, July 2015

Guo, Yinsheng; Sun, Dezheng; Ouyang, Bin
Nano Letters, Vol. 15, Issue 8
DOI: 10.1021/acs.nanolett.5b01196

Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers
journal, July 2014

Duerloo, Karel-Alexander N.; Li, Yao; Reed, Evan J.
Nature Communications, Vol. 5, Issue 1
DOI: 10.1038/ncomms5214

Planar heterostructures of single-layer transition metal dichalcogenides: Composite structures, Schottky junctions, tunneling barriers, and half metals
journal, February 2017

Aras, Mehmet; Kılıç, Çetin; Ciraci, S.
Physical Review B, Vol. 95, Issue 7
DOI: 10.1103/PhysRevB.95.075434

Gate-Tunable Atomically Thin Lateral MoS ₂ Schottky Junction Patterned by Electron Beam
journal, May 2016

Katagiri, Y.; Nakamura, T.; Ishii, A.
Nano Letters, Vol. 16, Issue 6
DOI: 10.1021/acs.nanolett.6b01186

The electronic transport properties of transition-metal dichalcogenide lateral heterojunctions
journal, January 2016

An, Yipeng; Zhang, Mengjun; Wu, Dapeng
Journal of Materials Chemistry C, Vol. 4, Issue 46
DOI: 10.1039/C6TC04327E

Mechanically Controllable Break Junctions for Molecular Electronics
journal, August 2013

Xiang, Dong; Jeong, Hyunhak; Lee, Takhee
Advanced Materials, Vol. 25, Issue 35
DOI: 10.1002/adma.201301589

Stable, Single-Layer MX ₂ Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like Structure
journal, April 2012

Ataca, C.; Şahin, H.; Ciraci, S.
The Journal of Physical Chemistry C, Vol. 116, Issue 16
DOI: 10.1021/jp212558p

Prediction of structural and metal-to-semiconductor phase transitions in nanoscale ${MoS}_{2}$ , ${WS}_{2}$ , and other transition metal dichalcogenide zigzag ribbons
journal, February 2015

Güller, F.; Llois, A. M.; Goniakowski, J.
Physical Review B, Vol. 91, Issue 7
DOI: 10.1103/PhysRevB.91.075407

Intrinsic region length scaling of heavily doped carbon nanotube p–i–n junctions
journal, January 2013

Li, Zheng; Zheng, Jiaxin; Ni, Zeyuan
Nanoscale, Vol. 5, Issue 15
DOI: 10.1039/c3nr01462b

2H → 1T phase transition and hydrogen evolution activity of MoS ₂ , MoSe ₂ , WS ₂ and WSe ₂ strongly depends on the MX ₂ composition
journal, January 2015

Ambrosi, Adriano; Sofer, Zdeněk; Pumera, Martin
Chemical Communications, Vol. 51, Issue 40
DOI: 10.1039/C5CC00803D

Controlling the Metal to Semiconductor Transition of MoS ₂ and WS ₂ in Solution
journal, January 2015

Chou, Stanley S.; Huang, Yi-Kai; Kim, Jaemyung
Journal of the American Chemical Society, Vol. 137, Issue 5
DOI: 10.1021/ja5107145

1H and 1T polymorphs, structural transitions and anomalous properties of (Mo,W)(S,Se) ₂ monolayers: first-principles analysis
journal, August 2015

Singh, Anjali; Shirodkar, Sharmila N.; Waghmare, Umesh V.
2D Materials, Vol. 2, Issue 3
DOI: 10.1088/2053-1583/2/3/035013

On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETs
journal, July 2006

Knoch, J.; Mantl, S.
IEEE Transactions on Electron Devices, Vol. 53, Issue 7
DOI: 10.1109/TED.2006.877262

Atomically Thin ${MoS}_{2}$ A New Direct-Gap Semiconductor
journal, September 2010

Mak, Kin Fai; Lee, Changgu; Hone, James
Physical Review Letters, Vol. 105, Issue 13, Article No.136805
DOI: 10.1103/PhysRevLett.105.136805

Orbital analysis of electronic structure and phonon dispersion in MoS $_{2}$ , MoSe $_{2}$ , WS $_{2}$ , and WSe $_{2}$ monolayers under strain
journal, November 2013

Chang, Chung-Huai; Fan, Xiaofeng; Lin, Shi-Hsin
Physical Review B, Vol. 88, Issue 19
DOI: 10.1103/PhysRevB.88.195420

Generalized many-channel conductance formula with application to small rings
journal, May 1985

Büttiker, M.; Imry, Y.; Landauer, R.
Physical Review B, Vol. 31, Issue 10
DOI: 10.1103/PhysRevB.31.6207

Ab initio simulation of single- and few-layer ${MoS}_{2}$ transistors: Effect of electron-phonon scattering
journal, July 2015

Szabó, Áron; Rhyner, Reto; Luisier, Mathieu
Physical Review B, Vol. 92, Issue 3
DOI: 10.1103/PhysRevB.92.035435

Phonon wave interference in graphene and boron nitride superlattice
journal, July 2016

Chen, Xue-Kun; Xie, Zhong-Xiang; Zhou, Wu-Xing
Applied Physics Letters, Vol. 109, Issue 2
DOI: 10.1063/1.4958688

Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects
journal, January 2014

Jiang, Xiang-Wei; Gong, Jian; Xu, Nuo
Applied Physics Letters, Vol. 104, Issue 2
DOI: 10.1063/1.4862667

Does p-type ohmic contact exist in WSe ₂ –metal interfaces?
journal, January 2016

Wang, Yangyang; Yang, Ruo Xi; Quhe, Ruge
Nanoscale, Vol. 8, Issue 2
DOI: 10.1039/C5NR06204G

Phase-engineered low-resistance contacts for ultrathin MoS₂ transistors
journal, August 2014

Kappera, Rajesh; Voiry, Damien; Yalcin, Sibel Ebru
Nature Materials, Vol. 13, Issue 12, p. 1128-1134
DOI: 10.1038/nmat4080

Chemically exfoliated single-layer ${MoS}_{2}$ : Stability, lattice dynamics, and catalytic adsorption from first principles
journal, December 2013

Calandra, Matteo
Physical Review B, Vol. 88, Issue 24
DOI: 10.1103/PhysRevB.88.245428

Density-functional method for nonequilibrium electron transport
journal, March 2002

Brandbyge, Mads; Mozos, José-Luis; Ordejón, Pablo
Physical Review B, Vol. 65, Issue 16, Article No. 165401
DOI: 10.1103/PhysRevB.65.165401

A first-principles examination of conducting monolayer 1T′-MX ₂ (M = Mo, W; X = S, Se, Te): promising catalysts for hydrogen evolution reaction and its enhancement by strain
journal, January 2015

Putungan, Darwin Barayang; Lin, Shi-Hsin; Kuo, Jer-Lai
Physical Chemistry Chemical Physics, Vol. 17, Issue 33
DOI: 10.1039/C5CP03799A

Phase stability of transition metal dichalcogenide by competing ligand field stabilization and charge density wave
journal, September 2015

K. C., Santosh; Zhang, Chenxi; Hong, Suklyun
2D Materials, Vol. 2, Issue 3
DOI: 10.1088/2053-1583/2/3/035019

Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier
journal, April 2016

Liu, Yuanyue; Stradins, Paul; Wei, Su-Huai
Science Advances, Vol. 2, Issue 4
DOI: 10.1126/sciadv.1600069

High Performance Multilayer MoS₂Transistors with Scandium Contacts
journal, December 2012

Das, Saptarshi; Chen, Hong-Yan; Penumatcha, Ashish Verma
Nano Letters, Vol. 13, Issue 1, p. 100-105
DOI: 10.1021/nl303583v

A new (2 × 1) dimerized structure of monolayer 1T-molybdenum disulfide, studied from first principles calculations
journal, November 2013

Hu, Ting; Li, Rui; Dong, Jinming
The Journal of Chemical Physics, Vol. 139, Issue 17
DOI: 10.1063/1.4827082

Reversible Semiconducting-to-Metallic Phase Transition in Chemical Vapor Deposition Grown Monolayer WSe ₂ and Applications for Devices
journal, June 2015

Ma, Yuqiang; Liu, Bilu; Zhang, Anyi
ACS Nano, Vol. 9, Issue 7
DOI: 10.1021/acsnano.5b02399

Similar Records in DOE PAGES and OSTI.GOV collections:

Ballistic performance comparison of monolayer transition metal dichalcogenide MX{sub 2} (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors

Journal Article Chang, Jiwon ; Register, Leonard F. ; Banerjee, Sanjay K. - Journal of Applied Physics

We study the transport properties of monolayer MX{sub 2} (M = Mo, W; X = S, Se, Te) n- and p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic non-equilibrium Green's function simulations with an atomistic tight-binding Hamiltonian with hopping potentials obtained from density functional theory. We discuss the subthreshold slope, drain-induced barrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) for different monolayer MX{sub 2} MOSFETs. We also report the possibility of negative differential resistance behavior in the output characteristics of nanoscale monolayer MX{sub 2} MOSFETs.
https://doi.org/10.1063/1.4866872
Gate-modulated conductance of few-layer WSe{sub 2} field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Journal Article Wang, Junjie ; Feng, Simin ; Rhodes, Daniel ; ... - Applied Physics Letters

Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This work attempts to establish a connection between the two by examining the gate-dependent conductance of few-layer (1-5L) WSe{sub 2} field effect devices. Measurements and modeling of the subgap regime reveal Schottky barrier transistor behavior. We show that transmission through the contact barrier is dominated by thermionic field emission (TFE) at room temperature, despite the lack of intentional doping. The TFE process arises due to amore »« less
https://doi.org/10.1063/1.4918282
A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures

Journal Article Purches, W. E. ; Rossi, A. ; Zhao, R. ; ... - Applied Physics Letters

Schottky Barrier-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.
https://doi.org/10.1063/1.4928589
Schottky barrier contrasts in single and bi-layer graphene contacts for MoS{sub 2} field-effect transistors

Journal Article Du, Hyewon ; Kim, Taekwang ; Shin, Somyeong ; ... - Applied Physics Letters

We have investigated single- and bi-layer graphene as source-drain electrodes for n-type MoS{sub 2} transistors. Ti-MoS{sub 2}-graphene heterojunction transistors using both single-layer MoS{sub 2} (1M) and 4-layer MoS{sub 2} (4M) were fabricated in order to compare graphene electrodes with commonly used Ti electrodes. MoS{sub 2}-graphene Schottky barrier provided electron injection efficiency up to 130 times higher in the subthreshold regime when compared with MoS{sub 2}-Ti, which resulted in V{sub DS} polarity dependence of device parameters such as threshold voltage (V{sub TH}) and subthreshold swing (SS). Comparing single-layer graphene (SG) with bi-layer graphene (BG) in 4M devices, SG electrodes exhibited enhancedmore »« less
https://doi.org/10.1063/1.4937266
Molybdenum Contacts to MoS ₂ Field‐Effect Transistors: Schottky Barrier Extraction, Electrical Transport, and Low‐Frequency Noise

Journal Article Kwon, Jiseok ; Delker, Collin J. ; Janes, David B. ; ... - Physica Status Solidi. A, Applications and Materials Science
https://doi.org/10.1002/pssa.201900880

Similar Records

Title: In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides

Citation Formats

Molecular-Scale Electronics: From Concept to Function journal, March 2016

Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors journal, July 2014

Nanomaterials in transistors: From high-performance to thin-film applications journal, August 2015

Large and Tunable Photothermoelectric Effect in Single-Layer MoS 2 journal, January 2013

Controlled Synthesis of Highly Crystalline MoS 2 Flakes by Chemical Vapor Deposition journal, March 2013

Improved Carrier Injection in Ultrathin-Body SOI Schottky-Barrier MOSFETs journal, March 2007

Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides journal, May 2014

Spin filtering effect and magnetoresistance in zigzag 6, 6, 12-graphyne nanoribbon system journal, September 2014

Probing the Dynamics of the Metallic-to-Semiconducting Structural Phase Transformation in MoS 2 Crystals journal, July 2015

Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers journal, July 2014

Planar heterostructures of single-layer transition metal dichalcogenides: Composite structures, Schottky junctions, tunneling barriers, and half metals journal, February 2017

Gate-Tunable Atomically Thin Lateral MoS 2 Schottky Junction Patterned by Electron Beam journal, May 2016

The electronic transport properties of transition-metal dichalcogenide lateral heterojunctions journal, January 2016

Mechanically Controllable Break Junctions for Molecular Electronics journal, August 2013

Stable, Single-Layer MX 2 Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like Structure journal, April 2012

Prediction of structural and metal-to-semiconductor phase transitions in nanoscale MoS 2 , WS 2 , and other transition metal dichalcogenide zigzag ribbons journal, February 2015

Intrinsic region length scaling of heavily doped carbon nanotube p–i–n junctions journal, January 2013

2H → 1T phase transition and hydrogen evolution activity of MoS 2 , MoSe 2 , WS 2 and WSe 2 strongly depends on the MX 2 composition journal, January 2015

Controlling the Metal to Semiconductor Transition of MoS 2 and WS 2 in Solution journal, January 2015

1H and 1T polymorphs, structural transitions and anomalous properties of (Mo,W)(S,Se) 2 monolayers: first-principles analysis journal, August 2015

On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETs journal, July 2006

Atomically Thin MoS2 A New Direct-Gap Semiconductor journal, September 2010

Orbital analysis of electronic structure and phonon dispersion in MoS 2 , MoSe 2 , WS 2 , and WSe 2 monolayers under strain journal, November 2013

Generalized many-channel conductance formula with application to small rings journal, May 1985

Ab initio simulation of single- and few-layer MoS 2 transistors: Effect of electron-phonon scattering journal, July 2015

Phonon wave interference in graphene and boron nitride superlattice journal, July 2016

Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects journal, January 2014

Does p-type ohmic contact exist in WSe 2 –metal interfaces? journal, January 2016

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors journal, August 2014

Chemically exfoliated single-layer MoS 2 : Stability, lattice dynamics, and catalytic adsorption from first principles journal, December 2013

Density-functional method for nonequilibrium electron transport journal, March 2002

A first-principles examination of conducting monolayer 1T′-MX 2 (M = Mo, W; X = S, Se, Te): promising catalysts for hydrogen evolution reaction and its enhancement by strain journal, January 2015

Phase stability of transition metal dichalcogenide by competing ligand field stabilization and charge density wave journal, September 2015

Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier journal, April 2016

High Performance Multilayer MoS2Transistors with Scandium Contacts journal, December 2012

A new (2 × 1) dimerized structure of monolayer 1T-molybdenum disulfide, studied from first principles calculations journal, November 2013

Reversible Semiconducting-to-Metallic Phase Transition in Chemical Vapor Deposition Grown Monolayer WSe 2 and Applications for Devices journal, June 2015

Molecular-Scale Electronics: From Concept to Function
journal, March 2016

Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors
journal, July 2014

Nanomaterials in transistors: From high-performance to thin-film applications
journal, August 2015

Large and Tunable Photothermoelectric Effect in Single-Layer MoS ₂
journal, January 2013

Controlled Synthesis of Highly Crystalline MoS ₂ Flakes by Chemical Vapor Deposition
journal, March 2013

Improved Carrier Injection in Ultrathin-Body SOI Schottky-Barrier MOSFETs
journal, March 2007

Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides
journal, May 2014

Spin filtering effect and magnetoresistance in zigzag 6, 6, 12-graphyne nanoribbon system
journal, September 2014

Probing the Dynamics of the Metallic-to-Semiconducting Structural Phase Transformation in MoS ₂ Crystals
journal, July 2015

Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers
journal, July 2014

Planar heterostructures of single-layer transition metal dichalcogenides: Composite structures, Schottky junctions, tunneling barriers, and half metals
journal, February 2017

Gate-Tunable Atomically Thin Lateral MoS ₂ Schottky Junction Patterned by Electron Beam
journal, May 2016

The electronic transport properties of transition-metal dichalcogenide lateral heterojunctions
journal, January 2016

Mechanically Controllable Break Junctions for Molecular Electronics
journal, August 2013

Stable, Single-Layer MX ₂ Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like Structure
journal, April 2012

Prediction of structural and metal-to-semiconductor phase transitions in nanoscale ${MoS}_{2}$ , ${WS}_{2}$ , and other transition metal dichalcogenide zigzag ribbons
journal, February 2015

Intrinsic region length scaling of heavily doped carbon nanotube p–i–n junctions
journal, January 2013

2H → 1T phase transition and hydrogen evolution activity of MoS ₂ , MoSe ₂ , WS ₂ and WSe ₂ strongly depends on the MX ₂ composition
journal, January 2015

Controlling the Metal to Semiconductor Transition of MoS ₂ and WS ₂ in Solution
journal, January 2015

1H and 1T polymorphs, structural transitions and anomalous properties of (Mo,W)(S,Se) ₂ monolayers: first-principles analysis
journal, August 2015

On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETs
journal, July 2006

Atomically Thin ${MoS}_{2}$ A New Direct-Gap Semiconductor
journal, September 2010

Orbital analysis of electronic structure and phonon dispersion in MoS $_{2}$ , MoSe $_{2}$ , WS $_{2}$ , and WSe $_{2}$ monolayers under strain
journal, November 2013

Generalized many-channel conductance formula with application to small rings
journal, May 1985

Ab initio simulation of single- and few-layer ${MoS}_{2}$ transistors: Effect of electron-phonon scattering
journal, July 2015

Phonon wave interference in graphene and boron nitride superlattice
journal, July 2016

Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects
journal, January 2014

Does p-type ohmic contact exist in WSe ₂ –metal interfaces?
journal, January 2016

Phase-engineered low-resistance contacts for ultrathin MoS₂ transistors
journal, August 2014

Chemically exfoliated single-layer ${MoS}_{2}$ : Stability, lattice dynamics, and catalytic adsorption from first principles
journal, December 2013

Density-functional method for nonequilibrium electron transport
journal, March 2002

A first-principles examination of conducting monolayer 1T′-MX ₂ (M = Mo, W; X = S, Se, Te): promising catalysts for hydrogen evolution reaction and its enhancement by strain
journal, January 2015

Phase stability of transition metal dichalcogenide by competing ligand field stabilization and charge density wave
journal, September 2015

Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier
journal, April 2016

High Performance Multilayer MoS₂Transistors with Scandium Contacts
journal, December 2012

A new (2 × 1) dimerized structure of monolayer 1T-molybdenum disulfide, studied from first principles calculations
journal, November 2013

Reversible Semiconducting-to-Metallic Phase Transition in Chemical Vapor Deposition Grown Monolayer WSe ₂ and Applications for Devices
journal, June 2015