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Title: In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides

Journal Article · · Physical Review B
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Not Available

Sponsoring Organization:
USDOE
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
1395926
Journal Information:
Physical Review B, Journal Name: Physical Review B Journal Issue: 16 Vol. 96; ISSN 2469-9950; ISSN PRBMDO
Publisher:
American Physical SocietyCopyright Statement
Country of Publication:
United States
Language:
English

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