In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides

Fan, Zhi-Qiang; Jiang, Xiang-Wei; Luo, Jun-Wei; Jiao, Li-Ying; Huang, Ru; Li, Shu-Shen; Wang, Lin-Wang

doi:10.1103/PhysRevB.96.165402

Title: In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides

Journal Article · 02 October 2017 · Physical Review B

DOI: https://doi.org/10.1103/PhysRevB.96.165402 · OSTI ID:1395926

Fan, Zhi-Qiang; Jiang, Xiang-Wei; Luo, Jun-Wei; Jiao, Li-Ying; Huang, Ru; Li, Shu-Shen; Wang, Lin-Wang

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Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1395926

Journal Information:: Physical Review B, Journal Name: Physical Review B Vol. 96 Journal Issue: 16; ISSN 2469-9950

Publisher:: American Physical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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