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Title: In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides

Authors:
; ; ; ; ; ;
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 96 Journal Issue: 16; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1395926

Fan, Zhi-Qiang, Jiang, Xiang-Wei, Luo, Jun-Wei, Jiao, Li-Ying, Huang, Ru, Li, Shu-Shen, and Wang, Lin-Wang. In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides. United States: N. p., Web. doi:10.1103/PhysRevB.96.165402.
Fan, Zhi-Qiang, Jiang, Xiang-Wei, Luo, Jun-Wei, Jiao, Li-Ying, Huang, Ru, Li, Shu-Shen, & Wang, Lin-Wang. In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides. United States. doi:10.1103/PhysRevB.96.165402.
Fan, Zhi-Qiang, Jiang, Xiang-Wei, Luo, Jun-Wei, Jiao, Li-Ying, Huang, Ru, Li, Shu-Shen, and Wang, Lin-Wang. 2017. "In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides". United States. doi:10.1103/PhysRevB.96.165402.
@article{osti_1395926,
title = {In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides},
author = {Fan, Zhi-Qiang and Jiang, Xiang-Wei and Luo, Jun-Wei and Jiao, Li-Ying and Huang, Ru and Li, Shu-Shen and Wang, Lin-Wang},
abstractNote = {},
doi = {10.1103/PhysRevB.96.165402},
journal = {Physical Review B},
number = 16,
volume = 96,
place = {United States},
year = {2017},
month = {10}
}

Works referenced in this record:

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
journal, August 2014
  • Kappera, Rajesh; Voiry, Damien; Yalcin, Sibel Ebru
  • Nature Materials, Vol. 13, Issue 12, p. 1128-1134
  • DOI: 10.1038/nmat4080

Density-functional method for nonequilibrium electron transport
journal, March 2002
  • Brandbyge, Mads; Mozos, José-Luis; Ordejón, Pablo
  • Physical Review B, Vol. 65, Issue 16, Article No. 165401
  • DOI: 10.1103/PhysRevB.65.165401

High Performance Multilayer MoS2Transistors with Scandium Contacts
journal, December 2012
  • Das, Saptarshi; Chen, Hong-Yan; Penumatcha, Ashish Verma
  • Nano Letters, Vol. 13, Issue 1, p. 100-105
  • DOI: 10.1021/nl303583v