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Title: Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO 2 on Al x Ga 1-x N

Authors:
 [1] ;  [1]
  1. Department of Physics, Arizona State University, Tempe, AZ 85287-1504, USA
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 122 Journal Issue: 12; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1395588

Eller, Brianna S., and Nemanich, Robert J.. Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO 2 on Al x Ga 1-x N. United States: N. p., Web. doi:10.1063/1.5003921.
Eller, Brianna S., & Nemanich, Robert J.. Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO 2 on Al x Ga 1-x N. United States. doi:10.1063/1.5003921.
Eller, Brianna S., and Nemanich, Robert J.. 2017. "Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO 2 on Al x Ga 1-x N". United States. doi:10.1063/1.5003921.
@article{osti_1395588,
title = {Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO 2 on Al x Ga 1-x N},
author = {Eller, Brianna S. and Nemanich, Robert J.},
abstractNote = {},
doi = {10.1063/1.5003921},
journal = {Journal of Applied Physics},
number = 12,
volume = 122,
place = {United States},
year = {2017},
month = {9}
}

Works referenced in this record:

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
journal, June 2005
  • Puurunen, Riikka L.
  • Journal of Applied Physics, Vol. 97, Issue 12, Article No. 121301
  • DOI: 10.1063/1.1940727