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Title: Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO 2 on Al x Ga 1-x N

Authors:
 [1];  [1]
  1. Department of Physics, Arizona State University, Tempe, AZ 85287-1504, USA
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1395588
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 122 Journal Issue: 12; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Eller, Brianna S., and Nemanich, Robert J. Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO 2 on Al x Ga 1-x N. United States: N. p., 2017. Web. doi:10.1063/1.5003921.
Eller, Brianna S., & Nemanich, Robert J. Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO 2 on Al x Ga 1-x N. United States. doi:10.1063/1.5003921.
Eller, Brianna S., and Nemanich, Robert J. Thu . "Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO 2 on Al x Ga 1-x N". United States. doi:10.1063/1.5003921.
@article{osti_1395588,
title = {Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO 2 on Al x Ga 1-x N},
author = {Eller, Brianna S. and Nemanich, Robert J.},
abstractNote = {},
doi = {10.1063/1.5003921},
journal = {Journal of Applied Physics},
number = 12,
volume = 122,
place = {United States},
year = {2017},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.5003921

Citation Metrics:
Cited by: 1 work
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Works referenced in this record:

Suppression of Current Collapse in Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors
journal, January 2016

  • Wang, Chih-Hao; Ho, Shin-Yi; Huang, Jian Jang
  • IEEE Electron Device Letters, Vol. 37, Issue 1
  • DOI: 10.1109/LED.2015.2498623

Oxidation and the origin of the two-dimensional electron gas in AlGaN/GaN heterostructures
journal, June 2010

  • Miao, M. S.; Weber, J. R.; Van de Walle, C. G.
  • Journal of Applied Physics, Vol. 107, Issue 12
  • DOI: 10.1063/1.3431391

Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation
journal, June 2013

  • Ramanan, Narayanan; Lee, Bongmook; Kirkpatrick, Casey
  • Semiconductor Science and Technology, Vol. 28, Issue 7
  • DOI: 10.1088/0268-1242/28/7/074004

Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO
conference, January 2011

  • Dingemans, Gijs; Van Helvoirt, Cristian; Van de Sanden, M. C. M.
  • 219th ECS Meeting, ECS Transactions
  • DOI: 10.1149/1.3572283

Gallium Nitride Studied by Electron Spectroscopy
journal, January 1980


Electronic surface and dielectric interface states on GaN and AlGaN
journal, September 2013

  • Eller, Brianna S.; Yang, Jialing; Nemanich, Robert J.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 31, Issue 5
  • DOI: 10.1116/1.4807904

Investigation of Surface Band Bending of Ga-Face GaN by Angle-Resolved X-ray Photoelectron Spectroscopy
journal, January 2016

  • Duan, T. L.; Pan, J. S.; Ang, D. S.
  • ECS Journal of Solid State Science and Technology, Vol. 5, Issue 9
  • DOI: 10.1149/2.0261609jss

Measurement of the band offsets of SiO2 on clean n - and p -type GaN(0001)
journal, April 2003

  • Cook, T. E.; Fulton, C. C.; Mecouch, W. J.
  • Journal of Applied Physics, Vol. 93, Issue 7
  • DOI: 10.1063/1.1559424

Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application
journal, February 2012

  • Lee, Bongmook; Kirkpatrick, Casey; Choi, Young-hwan
  • physica status solidi (c), Vol. 9, Issue 3-4
  • DOI: 10.1002/pssc.201100422

Challenges for energy efficient wide band gap semiconductor power devices: Energy efficient wide band gap semiconductor power devices
journal, May 2014

  • Roccaforte, Fabrizio; Fiorenza, Patrick; Greco, Giuseppe
  • physica status solidi (a), Vol. 211, Issue 9
  • DOI: 10.1002/pssa.201300558

Measurement of AlN/GaN (0001) heterojunction band offsets by x‐ray photoemission spectroscopy
journal, May 1996

  • Waldrop, J. R.; Grant, R. W.
  • Applied Physics Letters, Vol. 68, Issue 20
  • DOI: 10.1063/1.116355

Distribution of donor states on etched surface of AlGaN/GaN heterostructures
journal, September 2010

  • Higashiwaki, Masataka; Chowdhury, Srabanti; Miao, Mao-Sheng
  • Journal of Applied Physics, Vol. 108, Issue 6
  • DOI: 10.1063/1.3481412

Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs
journal, February 2016


Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures
journal, November 2010

  • Higashiwaki, Masataka; Chowdhury, Srabanti; Swenson, Brian L.
  • Applied Physics Letters, Vol. 97, Issue 22
  • DOI: 10.1063/1.3522649

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices
journal, February 2015

  • Ramanan, Narayanan; Lee, Bongmook; Misra, Veena
  • IEEE Transactions on Electron Devices, Vol. 62, Issue 2
  • DOI: 10.1109/TED.2014.2382677

Band offset measurements of the GaN (0001)/HfO2 interface
journal, December 2003

  • Cook, T. E.; Fulton, C. C.; Mecouch, W. J.
  • Journal of Applied Physics, Vol. 94, Issue 11
  • DOI: 10.1063/1.1625579

Characterization of plasma-enhanced atomic layer deposition of Al 2 O 3 using dimethylaluminum isopropoxide
journal, March 2014

  • Yang, Jialing; Eller, Brianna S.; Kaur, Manpuneet
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 32, Issue 2
  • DOI: 10.1116/1.4866378

Band offsets of wide-band-gap oxides and implications for future electronic devices
journal, January 2000

  • Robertson, John
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 18, Issue 3
  • DOI: 10.1116/1.591472

Empirical tight‐binding calculation of the branch‐point energy of the continuum of interface‐induced gap states
journal, November 1996

  • Mönch, Winfried
  • Journal of Applied Physics, Vol. 80, Issue 9
  • DOI: 10.1063/1.363486

Relations between the Refractive Index and Energy Gap of Semiconductors
journal, October 1985


Electron band bending of polar, semipolar and non-polar GaN surfaces
journal, March 2016

  • Bartoš, I.; Romanyuk, O.; Houdkova, J.
  • Journal of Applied Physics, Vol. 119, Issue 10
  • DOI: 10.1063/1.4943592

Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN, and InN
journal, June 2003


Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States
journal, September 2014

  • Eller, Brianna S.; Yang, Jialing; Nemanich, Robert J.
  • Journal of Electronic Materials, Vol. 43, Issue 12
  • DOI: 10.1007/s11664-014-3383-z

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
journal, June 2005

  • Puurunen, Riikka L.
  • Journal of Applied Physics, Vol. 97, Issue 12, Article No. 121301
  • DOI: 10.1063/1.1940727

Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers
journal, May 2016


Improved linearity and reliability in GaN metal–oxide–semiconductor high-electron-mobility transistors using nanolaminate La 2 O 3 /SiO 2 gate dielectric
journal, March 2016

  • Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin
  • Japanese Journal of Applied Physics, Vol. 55, Issue 4S
  • DOI: 10.7567/JJAP.55.04EG04

Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
journal, September 2014

  • Yang, Jialing; Eller, Brianna S.; Nemanich, Robert J.
  • Journal of Applied Physics, Vol. 116, Issue 12
  • DOI: 10.1063/1.4895985

Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride
journal, September 2012

  • Yang, Jialing; Eller, Brianna S.; Zhu, Chiyu
  • Journal of Applied Physics, Vol. 112, Issue 5
  • DOI: 10.1063/1.4749268

High-Quality Thin SiO 2 Films Grown by Atomic Layer Deposition Using Tris(dimethylamino)silane (TDMAS) and Ozone
journal, January 2013

  • Han, Lei; Chen, Zhi
  • ECS Journal of Solid State Science and Technology, Vol. 2, Issue 11
  • DOI: 10.1149/2.001312jss

Valence‐band discontinuity between GaN and AlN measured by x‐ray photoemission spectroscopy
journal, August 1994

  • Martin, G.; Strite, S.; Botchkarev, A.
  • Applied Physics Letters, Vol. 65, Issue 5
  • DOI: 10.1063/1.112247

Band offsets of high K gate oxides on III-V semiconductors
journal, July 2006

  • Robertson, J.; Falabretti, B.
  • Journal of Applied Physics, Vol. 100, Issue 1
  • DOI: 10.1063/1.2213170

Band bending and photoemission-induced surface photovoltages on clean n - and p -GaN (0001) surfaces
journal, September 2002


The fundamental surface science of wurtzite gallium nitride
journal, September 2017


Atomic Layer Deposition of $\hbox{SiO}_{2}$ for AlGaN/GaN MOS-HFETs
journal, September 2012

  • Kirkpatrick, Casey J.; Lee, Bongmook; Suri, Rahul
  • IEEE Electron Device Letters, Vol. 33, Issue 9
  • DOI: 10.1109/LED.2012.2203782

Improved package reliability of AlGaN/GaN HFETs on 150mm Si substrates by SiNx/polyimide dual passivation layers
journal, December 2016


A study on the Moss relation
journal, August 1995