Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO2 on AlxGa1-xN

Eller, Brianna S.; Nemanich, Robert J.

doi:10.1063/1.5003921

Title: Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO2 on AlxGa1-xN

Abstract

AlxGa1-xN is characterized by a significant spontaneous and piezoelectric polarization, which increases with the aluminum content. As a result, a surface bound charge is present, which favors compensation by surface states and influences the reliability of AlGaN/GaN devices. This work, therefore, focused on the effects of the polarization charge for GaN and AlGaN with three different aluminum concentrations 15%, 25%, and 35%. The band bending of AlxGa1-xN surfaces was measured after a N2/H2 plasma pretreatment, which reduced the carbon and oxygen contamination below the detection limit of x-ray photoelectron spectroscopy. Surface band bending was then related to surface states, where the band bending of oxygen-free surfaces—as obtained with a high-temperature, immersed hydrogen/nitrogen plasma clean—scales with the aluminum content. In addition, the band offsets at the plasma-enhanced atomic layer deposited SiO2/AlxGa1-xN interface were measured, giving 3.4 eV, 3.3 eV, 3.3 eV, and 3.0 eV for respective 0%, 15%, 25%, and 35% aluminum concentrations. These values are in accordance with the charge neutrality level model, which implies that SiO2 will confine carriers over nearly the full range of the aluminum content.

Authors:: Eller, Brianna S.; Nemanich, Robert J.

Publication Date:: Fri Sep 29 00:00:00 EDT 2017

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1395588

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Name: Journal of Applied Physics Journal Volume: 122 Journal Issue: 12; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Eller, Brianna S., and Nemanich, Robert J. Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO2 on AlxGa1-xN.  United States: N. p., 2017. 
Web.  doi:10.1063/1.5003921.

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                    Eller, Brianna S., & Nemanich, Robert J. Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO2 on AlxGa1-xN.  United States.  https://doi.org/10.1063/1.5003921

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                    Eller, Brianna S., and Nemanich, Robert J. Fri .  
"Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO2 on AlxGa1-xN".  United States.  https://doi.org/10.1063/1.5003921.

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@article{osti_1395588,

  title        = {Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO2 on AlxGa1-xN},

  author       = {Eller, Brianna S. and Nemanich, Robert J.},

  abstractNote = {AlxGa1-xN is characterized by a significant spontaneous and piezoelectric polarization, which increases with the aluminum content. As a result, a surface bound charge is present, which favors compensation by surface states and influences the reliability of AlGaN/GaN devices. This work, therefore, focused on the effects of the polarization charge for GaN and AlGaN with three different aluminum concentrations 15%, 25%, and 35%. The band bending of AlxGa1-xN surfaces was measured after a N2/H2 plasma pretreatment, which reduced the carbon and oxygen contamination below the detection limit of x-ray photoelectron spectroscopy. Surface band bending was then related to surface states, where the band bending of oxygen-free surfaces—as obtained with a high-temperature, immersed hydrogen/nitrogen plasma clean—scales with the aluminum content. In addition, the band offsets at the plasma-enhanced atomic layer deposited SiO2/AlxGa1-xN interface were measured, giving 3.4 eV, 3.3 eV, 3.3 eV, and 3.0 eV for respective 0%, 15%, 25%, and 35% aluminum concentrations. These values are in accordance with the charge neutrality level model, which implies that SiO2 will confine carriers over nearly the full range of the aluminum content.},

  doi          = {10.1063/1.5003921},

  journal      = {Journal of Applied Physics},

  number       = 12,

  volume       = 122,

  place        = {United States},

  year         = {Fri Sep 29 00:00:00 EDT 2017},

  month        = {Fri Sep 29 00:00:00 EDT 2017}

}

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Title: Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO2 on AlxGa1-xN

Abstract

Citation Formats

Suppression of Current Collapse in Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors journal, January 2016

Oxidation and the origin of the two-dimensional electron gas in AlGaN/GaN heterostructures journal, June 2010

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journal, August 1994

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journal, July 2006

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