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Title: Solution Monolayer Epitaxy for Tunable Atomically Sharp Oxide Interfaces

Journal Article · · Advanced Materials Interfaces
 [1];  [2];  [1];  [1];  [3];  [3];  [3];  [2];  [1]
  1. Raymond and Beverly Sackler School of Physics Tel Aviv University Tel Aviv 6997801 Israel
  2. Raymond and Beverly Sackler School of Chemistry Tel Aviv University Tel Aviv 6997801 Israel
  3. Ernst Ruska Centre for Microscopy and Spectroscopy with Electrons Research Centre Jülich 52425 Jülich Germany

Abstract Interfaces play an important role in a variety of devices including transistors, solar cells, and memory components. Atomically sharp interfaces are essential to avoid charge traps that hamper efficient device operation. Sharp interfaces usually require thin‐film fabrication techniques involving ultrahigh vacuum and high substrate temperatures. A new self‐limiting wet chemical process for deposition of epitaxial layers from alkoxide precursors is presented. This method is fast, cheap, and yields perfect interfaces as validated by various analysis techniques. It allows the growth of heterostructures with half‐unit‐cell resolution. The method is demonstrated by designing a hole‐type oxide interface SrTiO 3 /BaO/LaAlO 3 . It is shown that transport through this interface exhibits properties of mixed electron–hole contributions with hole mobility exceeding that of electrons.

Sponsoring Organization:
USDOE
OSTI ID:
1395402
Journal Information:
Advanced Materials Interfaces, Journal Name: Advanced Materials Interfaces Vol. 4 Journal Issue: 22; ISSN 2196-7350
Publisher:
Wiley Blackwell (John Wiley & Sons)Copyright Statement
Country of Publication:
Germany
Language:
English
Citation Metrics:
Cited by: 3 works
Citation information provided by
Web of Science

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