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Title: Radiation-induced direct bandgap transition in few-layer MoS 2

Authors:
 [1] ;  [1] ;  [2] ;  [3] ;  [3] ; ORCiD logo [4]
  1. Department of Physics and Astronomy, University of Southern California, Los Angeles, California 90089, USA
  2. Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, USA
  3. Physical Sciences Laboratories, The Aerospace Corporation, 355 S. Douglas Street, El Segundo, California 90245, USA
  4. Department of Physics and Astronomy, University of Southern California, Los Angeles, California 90089, USA, Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, USA
Publication Date:
Grant/Contract Number:
FG02-07ER46376
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 111 Journal Issue: 13; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1395188

Wang, Bo, Yang, Sisi, Chen, Jihan, Mann, Colin, Bushmaker, Adam, and Cronin, Stephen B. Radiation-induced direct bandgap transition in few-layer MoS 2. United States: N. p., Web. doi:10.1063/1.5005121.
Wang, Bo, Yang, Sisi, Chen, Jihan, Mann, Colin, Bushmaker, Adam, & Cronin, Stephen B. Radiation-induced direct bandgap transition in few-layer MoS 2. United States. doi:10.1063/1.5005121.
Wang, Bo, Yang, Sisi, Chen, Jihan, Mann, Colin, Bushmaker, Adam, and Cronin, Stephen B. 2017. "Radiation-induced direct bandgap transition in few-layer MoS 2". United States. doi:10.1063/1.5005121.
@article{osti_1395188,
title = {Radiation-induced direct bandgap transition in few-layer MoS 2},
author = {Wang, Bo and Yang, Sisi and Chen, Jihan and Mann, Colin and Bushmaker, Adam and Cronin, Stephen B.},
abstractNote = {},
doi = {10.1063/1.5005121},
journal = {Applied Physics Letters},
number = 13,
volume = 111,
place = {United States},
year = {2017},
month = {9}
}

Works referenced in this record:

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010