skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Carrier-controlled anomalous Hall effect in an intrinsic ferromagnetic semiconductor

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1394713
Grant/Contract Number:  
SC0008933
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 96 Journal Issue: 11; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Trodahl, H. J., Natali, F., Ruck, B. J., and Lambrecht, W. R. L. Carrier-controlled anomalous Hall effect in an intrinsic ferromagnetic semiconductor. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.115309.
Trodahl, H. J., Natali, F., Ruck, B. J., & Lambrecht, W. R. L. Carrier-controlled anomalous Hall effect in an intrinsic ferromagnetic semiconductor. United States. doi:10.1103/PhysRevB.96.115309.
Trodahl, H. J., Natali, F., Ruck, B. J., and Lambrecht, W. R. L. Mon . "Carrier-controlled anomalous Hall effect in an intrinsic ferromagnetic semiconductor". United States. doi:10.1103/PhysRevB.96.115309.
@article{osti_1394713,
title = {Carrier-controlled anomalous Hall effect in an intrinsic ferromagnetic semiconductor},
author = {Trodahl, H. J. and Natali, F. and Ruck, B. J. and Lambrecht, W. R. L.},
abstractNote = {},
doi = {10.1103/PhysRevB.96.115309},
journal = {Physical Review B},
number = 11,
volume = 96,
place = {United States},
year = {2017},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.96.115309

Citation Metrics:
Cited by: 3 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

XVIII. On the “Rotational Coefficient” in nickel and cobalt
journal, September 1881

  • Hall, E. H.
  • The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science, Vol. 12, Issue 74
  • DOI: 10.1080/14786448108627086

Rare-earth mononitrides
journal, October 2013


Optical and magnetic properties in epitaxial GdN thin films
journal, April 2011


Ferromagnetic redshift of the optical gap in GdN
journal, August 2007


Role of magnetic polarons in ferromagnetic GdN
journal, January 2013


Growth and properties of epitaxial GdN
journal, September 2009

  • Ludbrook, B. M.; Farrell, I. L.; Kuebel, M.
  • Journal of Applied Physics, Vol. 106, Issue 6
  • DOI: 10.1063/1.3211290

Semiconducting ground state of GdN thin films
journal, June 2006


Enhanced Curie temperature in N-deficient GdN
journal, March 2011

  • Plank, N. O. V.; Natali, F.; Galipaud, J.
  • Applied Physics Letters, Vol. 98, Issue 11
  • DOI: 10.1063/1.3566996

Electronic structure of rare-earth nitrides using the LSDA + U approach: Importance of allowing 4 f orbitals to break the cubic crystal symmetry
journal, January 2007


Magnetic Tunnel Junctions Incorporating a Near-Zero-Moment Ferromagnetic Semiconductor
journal, October 2016


Strain induced ferroelectricity in GdN: first-principles calculations
journal, May 2011


GdN (111) heteroepitaxy on GaN (0001) by N2 plasma and NH3 molecular beam epitaxy
journal, February 2009


GdN thin film: Chern insulating state on square lattice
journal, November 2015


Epitaxial growth of GdN on silicon substrate using an AlN buffer layer
journal, December 2010


Superconductivity in the ferromagnetic semiconductor samarium nitride
journal, July 2016


Quantum transport theory of anomalous electric, thermoelectric, and thermal Hall effects in ferromagnets
journal, April 2008


Highly resistive epitaxial Mg-doped GdN thin films
journal, January 2015

  • Lee, C. -M.; Warring, H.; Vézian, S.
  • Applied Physics Letters, Vol. 106, Issue 2
  • DOI: 10.1063/1.4905598

Hall Effect in Ferromagnetics
journal, September 1954


Crossover from diffusive to tunneling regime in NbN/DyN/NbN ferromagnetic semiconductor tunnel junctions
journal, March 2014


GdN Nanoisland-Based GaN Tunnel Junctions
journal, May 2013

  • Krishnamoorthy, Sriram; Kent, Thomas F.; Yang, Jing
  • Nano Letters, Vol. 13, Issue 6
  • DOI: 10.1021/nl4006723

Berry phase effects on electronic properties
journal, July 2010


Towards a Better Understanding of the Anomalous Hall Effect
journal, January 2017

  • Yue, Di; Jin, Xiaofeng
  • Journal of the Physical Society of Japan, Vol. 86, Issue 1
  • DOI: 10.7566/JPSJ.86.011006

Anomalous Hall effect
journal, May 2010