High temperature electrical resistivity and Seebeck coefficient of Ge 2 Sb 2 Te 5 thin films

Adnane, L.; Dirisaglik, F.; Cywar, A.; Cil, K.; Zhu, Y.; Lam, C.; Anwar, A. F. M.; Gokirmak, A.; Silva, H.

doi:10.1063/1.4996218

Title: High temperature electrical resistivity and Seebeck coefficient of Ge ₂ Sb ₂ Te ₅ thin films

Authors:

^[1]; Dirisaglik, F. ^[2]; Cywar, A. ^[1]; Cil, K. ^[1]; Zhu, Y. ^[3]; Lam, C. ^[3]; Anwar, A. F. M. ^[1]; Gokirmak, A. ^[1];

^[1]

Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269, USA
Department of Electrical and Electronics Engineering, Eskisehir Osmangazi University, Eskisehir 26480, Turkey
IBM Watson Research Center, Yorktown Heights, New York 10598, USA

Publication Date:: Thu Sep 28 00:00:00 EDT 2017

Sponsoring Org.:: USDOE

OSTI Identifier:: 1394681

Grant/Contract Number:: SC005038

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Name: Journal of Applied Physics Journal Volume: 122 Journal Issue: 12; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Adnane, L., Dirisaglik, F., Cywar, A., Cil, K., Zhu, Y., Lam, C., Anwar, A. F. M., Gokirmak, A., and Silva, H. High temperature electrical resistivity and Seebeck coefficient of Ge 2 Sb 2 Te 5 thin films.  United States: N. p., 2017. 
Web.  doi:10.1063/1.4996218.

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                    Adnane, L., Dirisaglik, F., Cywar, A., Cil, K., Zhu, Y., Lam, C., Anwar, A. F. M., Gokirmak, A., & Silva, H. High temperature electrical resistivity and Seebeck coefficient of Ge 2 Sb 2 Te 5 thin films.  United States.  https://doi.org/10.1063/1.4996218

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                    Adnane, L., Dirisaglik, F., Cywar, A., Cil, K., Zhu, Y., Lam, C., Anwar, A. F. M., Gokirmak, A., and Silva, H. Thu .  
"High temperature electrical resistivity and Seebeck coefficient of Ge 2 Sb 2 Te 5 thin films".  United States.  https://doi.org/10.1063/1.4996218.

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@article{osti_1394681,

  title        = {High temperature electrical resistivity and Seebeck coefficient of Ge 2 Sb 2 Te 5 thin films},

  author       = {Adnane, L. and Dirisaglik, F. and Cywar, A. and Cil, K. and Zhu, Y. and Lam, C. and Anwar, A. F. M. and Gokirmak, A. and Silva, H.},

  abstractNote = {},

  doi          = {10.1063/1.4996218},

  journal      = {Journal of Applied Physics},

  number       = 12,

  volume       = 122,

  place        = {United States},

  year         = {Thu Sep 28 00:00:00 EDT 2017},

  month        = {Thu Sep 28 00:00:00 EDT 2017}

}

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Works referenced in this record:

Numerical Modeling of Thermoelectric Thomson Effect in Phase Change Memory Bridge Structures
journal, March 2014

Dirisaglik, Faruk; Bakan, Gokhan; Faraclas, Azer
International Journal of High Speed Electronics and Systems, Vol. 23, Issue 01n02
DOI: 10.1142/S0129156414500049

Electronic Transport in High-Resistivity Cerium Sulfide
journal, February 1964

Cutler, M.; Leavy, J. F.
Physical Review, Vol. 133, Issue 4A
DOI: 10.1103/PhysRev.133.A1153

The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties
journal, March 2004

Dimitrov, D.; Shieh, H. -P. D.
Materials Science and Engineering: B, Vol. 107, Issue 2
DOI: 10.1016/j.mseb.2003.10.110

Impact of thermoelectric phenomena on phase-change memory performance metrics and scaling
journal, April 2012

Lee, Jaeho; Asheghi, Mehdi; Goodson, Kenneth E.
Nanotechnology, Vol. 23, Issue 20
DOI: 10.1088/0957-4484/23/20/205201

Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements
journal, May 2000

Friedrich, I.; Weidenhof, V.; Njoroge, W.
Journal of Applied Physics, Vol. 87, Issue 9
DOI: 10.1063/1.373041

Ge ₂ Sb ₂ Te ₅ /Sb superlattice-like thin film for high speed phase change memory application
journal, December 2015

Hu, Yifeng; Zou, Hua; Zhang, Jianhao
Applied Physics Letters, Vol. 107, Issue 26
DOI: 10.1063/1.4939149

Calorimetric measurements of structural relaxation and glass transition temperatures in sputtered films of amorphous Te alloys used for phase change recording
journal, March 2007

Kalb, J. A.; Wuttig, M.; Spaepen, F.
Journal of Materials Research, Vol. 22, Issue 3
DOI: 10.1557/jmr.2007.0103

Electrical Resistivity of Liquid $\hbox{Ge}_{2} \hbox{Sb}_{2}\hbox{Te}_{5}$ Based on Thin-Film and Nanoscale Device Measurements
journal, January 2013

Cil, Kadir; Dirisaglik, Faruk; Adnane, Lhacene
IEEE Transactions on Electron Devices, Vol. 60, Issue 1
DOI: 10.1109/TED.2012.2228273

Complex thermoelectric materials
journal, February 2008

Snyder, G. Jeffrey; Toberer, Eric S.
Nature Materials, Vol. 7, Issue 2, p. 105-114
DOI: 10.1038/nmat2090

Fermi-level pinning and charge neutrality level in nitrogen-doped Ge2Sb2Te5: Characterization and application in phase change memory devices
journal, September 2010

Fang, Lina Wei-Wei; Zhang, Zheng; Zhao, Rong
Journal of Applied Physics, Vol. 108, Issue 5
DOI: 10.1063/1.3475721

Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials
journal, January 2012

Rao, Feng; Song, Zhitang; Cheng, Yan
Acta Materialia, Vol. 60, Issue 1
DOI: 10.1016/j.actamat.2011.09.015

Terabit-per-square-inch data storage using phase-change media and scanning electrical nanoprobes
journal, January 2006

Wright, C. D.; Armand, M.; Aziz, M. M.
IEEE Transactions On Nanotechnology, Vol. 5, Issue 1
DOI: 10.1109/TNANO.2005.861400

Power factor investigation of RF magnetron sputtered c-GeSbTe thin film
journal, April 2016

Vora–ud, Athorn; Horprathum, Mati; Eiamchai, Pitak
Surface and Coatings Technology, Vol. 291
DOI: 10.1016/j.surfcoat.2016.02.021

The Conductivity of Lattices of Spheres. I. The Simple Cubic Lattice
journal, January 1978

McPhedran, R. C.; McKenzie, D. R.
Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 359, Issue 1696
DOI: 10.1098/rspa.1978.0031

Electronic Switching in Phase-Change Memories
journal, March 2004

Pirovano, A.; Lacaita, A. L.; Benvenuti, A.
IEEE Transactions on Electron Devices, Vol. 51, Issue 3
DOI: 10.1109/TED.2003.823243

Thermal conductivity of phase-change material Ge2Sb2Te5
journal, October 2006

Lyeo, Ho-Ki; Cahill, David G.; Lee, Bong-Sub
Applied Physics Letters, Vol. 89, Issue 15
DOI: 10.1063/1.2359354

Thermoelectric properties of c -GeSb 0.75 Te 0.5 to h -GeSbTe 0.5 thin films through annealing treatment effects
journal, November 2015

Vora-ud, Athorn; Horprathum, Mati; Eiamchai, Pitak
Journal of Alloys and Compounds, Vol. 649
DOI: 10.1016/j.jallcom.2015.07.120

In situ X-ray diffraction study of crystallization process of GeSbTe thin films during heat treatment
journal, May 2005

Kato, Naohiko; Konomi, Ichiro; Seno, Yoshiki
Applied Surface Science, Vol. 244, Issue 1-4
DOI: 10.1016/j.apsusc.2004.10.145

Enhancement of Thermoelectric Efficiency in PbTe by Distortion of the Electronic Density of States
journal, July 2008

Heremans, J. P.; Jovovic, V.; Toberer, E. S.
Science, Vol. 321, Issue 5888, p. 554-557
DOI: 10.1126/science.1159725

Modeling of Thermoelectric Effects in Phase Change Memory Cells
journal, February 2014

Faraclas, Azer; Bakan, Gokhan; Adnane, L'Hacene
IEEE Transactions on Electron Devices, Vol. 61, Issue 2
DOI: 10.1109/TED.2013.2296305

Electrical percolation characteristics of Ge2Sb2Te5 and Sn doped Ge2Sb2Te5 thin films during the amorphous to crystalline phase transition
journal, April 2005

Kim, Dae-Hwang; Merget, Florian; Laurenzis, Martin
Journal of Applied Physics, Vol. 97, Issue 8
DOI: 10.1063/1.1875742

Phase purity and the thermoelectric properties of Ge ₂ Sb ₂ Te ₅ films down to 25 nm thickness
journal, July 2012

Lee, Jaeho; Kodama, Takashi; Won, Yoonjin
Journal of Applied Physics, Vol. 112, Issue 1
DOI: 10.1063/1.4731252

The Scherrer Formula for X-Ray Particle Size Determination
journal, November 1939

Patterson, A. L.
Physical Review, Vol. 56, Issue 10
DOI: 10.1103/PhysRev.56.978

Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. I. Dielektrizitätskonstanten und Leitfähigkeiten der Mischkörper aus isotropen Substanzen
journal, January 1935

Bruggeman, D. A. G.
Annalen der Physik, Vol. 416, Issue 7
DOI: 10.1002/andp.19354160705

LVI. On the influence of obstacles arranged in rectangular order upon the properties of a medium
journal, December 1892

Rayleigh, Lord
The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science, Vol. 34, Issue 211
DOI: 10.1080/14786449208620364

Impact of Thermoelectric Effects on Phase Change Memory Characteristics
journal, October 2015

Ciocchini, Nicola; Laudato, Mario; Leone, Antonio
IEEE Transactions on Electron Devices, Vol. 62, Issue 10
DOI: 10.1109/TED.2015.2465835

A Reliable Technique for Experimental Evaluation of Crystallization Activation Energy in PCMs
journal, January 2008

Redaelli, A.; Pirovano, A.; Tortorelli, I.
IEEE Electron Device Letters, Vol. 29, Issue 1
DOI: 10.1109/LED.2007.910749

Disorder-induced localization in crystalline phase-change materials
journal, January 2011

Siegrist, T.; Jost, P.; Volker, H.
Nature Materials, Vol. 10, Issue 3
DOI: 10.1038/nmat2934

High temperature setup for measurements of Seebeck coefficient and electrical resistivity of thin films using inductive heating
journal, October 2015

Adnane, L.; Williams, N.; Silva, H.
Review of Scientific Instruments, Vol. 86, Issue 10
DOI: 10.1063/1.4934577

Phase Change Memory
journal, December 2010

Wong, H. -S. Philip; Raoux, Simone; Kim, SangBum
Proceedings of the IEEE, Vol. 98, Issue 12
DOI: 10.1109/JPROC.2010.2070050

Electronic Properties of Amorphous and Crystalline Ge ₂ Sb ₂ Te ₅ Films
journal, October 2005

Kato, Takayuki; Tanaka, Keiji
Japanese Journal of Applied Physics, Vol. 44, Issue 10
DOI: 10.1143/JJAP.44.7340

Structure of the Ge–Sb–Te phase-change materials studied by theory and experiment
journal, July 2007

Sun, Zhimei; Kyrsta, Stepan; Music, Denis
Solid State Communications, Vol. 143, Issue 4-5
DOI: 10.1016/j.ssc.2007.05.018

Dependences of Electrical Properties of Thin GeSbTe and AgInSbTe Films on Annealing
journal, August 2005

Yin, You; Sone, Hayato; Hosaka, Sumio
Japanese Journal of Applied Physics, Vol. 44, Issue 8
DOI: 10.1143/JJAP.44.6208

Evidence of the Thermo-Electric Thomson Effect and Influence on the Program Conditions and Cell Optimization in Phase-Change Memory Cells
conference, December 2007

Castro, D. Tio; Goux, L.; Hurkx, G. A. M.
2007 IEEE International Electron Devices Meeting
DOI: 10.1109/IEDM.2007.4418934

The Electrical Resistance of Binary Metallic Mixtures
journal, July 1952

Landauer, Rolf
Journal of Applied Physics, Vol. 23, Issue 7
DOI: 10.1063/1.1702301

Effect of InP Doping on the Phase Transition of Thin GeSbTe Films
journal, March 2015

Bang, Ki Su; Oh, Yong Jun; Lee, Seung-Yun
Journal of Electronic Materials, Vol. 44, Issue 8
DOI: 10.1007/s11664-015-3734-4

A study of phase transition behaviors of chalcogenide layers using in situ alternative-current impedance spectroscopy
journal, June 2012

Huang, Yin-Hsien; Huang, Yu-Jen; Hsieh, Tsung-Eong
Journal of Applied Physics, Vol. 111, Issue 12
DOI: 10.1063/1.4729528

Mechanical Properties of Phase-change Recording Media: GeSbTe Films
journal, May 2001

Jong, Chao-An; Fang, Weileung; Lee, Chain-Ming
Japanese Journal of Applied Physics, Vol. 40, Issue Part 1, No. 5A
DOI: 10.1143/JJAP.40.3320

Scherrer after sixty years: A survey and some new results in the determination of crystallite size
journal, April 1978

Langford, J. I.; Wilson, A. J. C.
Journal of Applied Crystallography, Vol. 11, Issue 2
DOI: 10.1107/S0021889878012844

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Title: High temperature electrical resistivity and Seebeck coefficient of Ge 2 Sb 2 Te 5 thin films

Citation Formats

Numerical Modeling of Thermoelectric Thomson Effect in Phase Change Memory Bridge Structures journal, March 2014

Electronic Transport in High-Resistivity Cerium Sulfide journal, February 1964

The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties journal, March 2004

Impact of thermoelectric phenomena on phase-change memory performance metrics and scaling journal, April 2012

Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements journal, May 2000

Ge 2 Sb 2 Te 5 /Sb superlattice-like thin film for high speed phase change memory application journal, December 2015

Calorimetric measurements of structural relaxation and glass transition temperatures in sputtered films of amorphous Te alloys used for phase change recording journal, March 2007

Electrical Resistivity of Liquid $\hbox{Ge}_{2} \hbox{Sb}_{2}\hbox{Te}_{5}$ Based on Thin-Film and Nanoscale Device Measurements journal, January 2013

Complex thermoelectric materials journal, February 2008

Fermi-level pinning and charge neutrality level in nitrogen-doped Ge2Sb2Te5: Characterization and application in phase change memory devices journal, September 2010

Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials journal, January 2012

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Power factor investigation of RF magnetron sputtered c-GeSbTe thin film journal, April 2016

The Conductivity of Lattices of Spheres. I. The Simple Cubic Lattice journal, January 1978

Electronic Switching in Phase-Change Memories journal, March 2004

Thermal conductivity of phase-change material Ge2Sb2Te5 journal, October 2006

Thermoelectric properties of c -GeSb 0.75 Te 0.5 to h -GeSbTe 0.5 thin films through annealing treatment effects journal, November 2015

In situ X-ray diffraction study of crystallization process of GeSbTe thin films during heat treatment journal, May 2005

Enhancement of Thermoelectric Efficiency in PbTe by Distortion of the Electronic Density of States journal, July 2008

Modeling of Thermoelectric Effects in Phase Change Memory Cells journal, February 2014

Electrical percolation characteristics of Ge2Sb2Te5 and Sn doped Ge2Sb2Te5 thin films during the amorphous to crystalline phase transition journal, April 2005

Phase purity and the thermoelectric properties of Ge 2 Sb 2 Te 5 films down to 25 nm thickness journal, July 2012

The Scherrer Formula for X-Ray Particle Size Determination journal, November 1939

Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. I. Dielektrizitätskonstanten und Leitfähigkeiten der Mischkörper aus isotropen Substanzen journal, January 1935

LVI. On the influence of obstacles arranged in rectangular order upon the properties of a medium journal, December 1892

Impact of Thermoelectric Effects on Phase Change Memory Characteristics journal, October 2015

A Reliable Technique for Experimental Evaluation of Crystallization Activation Energy in PCMs journal, January 2008

Disorder-induced localization in crystalline phase-change materials journal, January 2011

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Phase Change Memory journal, December 2010

Electronic Properties of Amorphous and Crystalline Ge 2 Sb 2 Te 5 Films journal, October 2005

Structure of the Ge–Sb–Te phase-change materials studied by theory and experiment journal, July 2007

Dependences of Electrical Properties of Thin GeSbTe and AgInSbTe Films on Annealing journal, August 2005

Evidence of the Thermo-Electric Thomson Effect and Influence on the Program Conditions and Cell Optimization in Phase-Change Memory Cells conference, December 2007

The Electrical Resistance of Binary Metallic Mixtures journal, July 1952

Effect of InP Doping on the Phase Transition of Thin GeSbTe Films journal, March 2015

A study of phase transition behaviors of chalcogenide layers using in situ alternative-current impedance spectroscopy journal, June 2012

Mechanical Properties of Phase-change Recording Media: GeSbTe Films journal, May 2001

Scherrer after sixty years: A survey and some new results in the determination of crystallite size journal, April 1978

Title: High temperature electrical resistivity and Seebeck coefficient of Ge ₂ Sb ₂ Te ₅ thin films

Numerical Modeling of Thermoelectric Thomson Effect in Phase Change Memory Bridge Structures
journal, March 2014

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journal, February 1964

The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties
journal, March 2004

Impact of thermoelectric phenomena on phase-change memory performance metrics and scaling
journal, April 2012

Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements
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Ge ₂ Sb ₂ Te ₅ /Sb superlattice-like thin film for high speed phase change memory application
journal, December 2015

Calorimetric measurements of structural relaxation and glass transition temperatures in sputtered films of amorphous Te alloys used for phase change recording
journal, March 2007

Electrical Resistivity of Liquid $\hbox{Ge}_{2} \hbox{Sb}_{2}\hbox{Te}_{5}$ Based on Thin-Film and Nanoscale Device Measurements
journal, January 2013

Complex thermoelectric materials
journal, February 2008

Fermi-level pinning and charge neutrality level in nitrogen-doped Ge2Sb2Te5: Characterization and application in phase change memory devices
journal, September 2010

Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials
journal, January 2012

Terabit-per-square-inch data storage using phase-change media and scanning electrical nanoprobes
journal, January 2006

Power factor investigation of RF magnetron sputtered c-GeSbTe thin film
journal, April 2016

The Conductivity of Lattices of Spheres. I. The Simple Cubic Lattice
journal, January 1978

Electronic Switching in Phase-Change Memories
journal, March 2004

Thermal conductivity of phase-change material Ge2Sb2Te5
journal, October 2006

Thermoelectric properties of c -GeSb 0.75 Te 0.5 to h -GeSbTe 0.5 thin films through annealing treatment effects
journal, November 2015

In situ X-ray diffraction study of crystallization process of GeSbTe thin films during heat treatment
journal, May 2005

Enhancement of Thermoelectric Efficiency in PbTe by Distortion of the Electronic Density of States
journal, July 2008

Modeling of Thermoelectric Effects in Phase Change Memory Cells
journal, February 2014

Electrical percolation characteristics of Ge2Sb2Te5 and Sn doped Ge2Sb2Te5 thin films during the amorphous to crystalline phase transition
journal, April 2005

Phase purity and the thermoelectric properties of Ge ₂ Sb ₂ Te ₅ films down to 25 nm thickness
journal, July 2012

The Scherrer Formula for X-Ray Particle Size Determination
journal, November 1939

Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. I. Dielektrizitätskonstanten und Leitfähigkeiten der Mischkörper aus isotropen Substanzen
journal, January 1935

LVI. On the influence of obstacles arranged in rectangular order upon the properties of a medium
journal, December 1892

Impact of Thermoelectric Effects on Phase Change Memory Characteristics
journal, October 2015

A Reliable Technique for Experimental Evaluation of Crystallization Activation Energy in PCMs
journal, January 2008

Disorder-induced localization in crystalline phase-change materials
journal, January 2011

High temperature setup for measurements of Seebeck coefficient and electrical resistivity of thin films using inductive heating
journal, October 2015

Phase Change Memory
journal, December 2010

Electronic Properties of Amorphous and Crystalline Ge ₂ Sb ₂ Te ₅ Films
journal, October 2005

Structure of the Ge–Sb–Te phase-change materials studied by theory and experiment
journal, July 2007

Dependences of Electrical Properties of Thin GeSbTe and AgInSbTe Films on Annealing
journal, August 2005

Evidence of the Thermo-Electric Thomson Effect and Influence on the Program Conditions and Cell Optimization in Phase-Change Memory Cells
conference, December 2007

The Electrical Resistance of Binary Metallic Mixtures
journal, July 1952

Effect of InP Doping on the Phase Transition of Thin GeSbTe Films
journal, March 2015

A study of phase transition behaviors of chalcogenide layers using in situ alternative-current impedance spectroscopy
journal, June 2012

Mechanical Properties of Phase-change Recording Media: GeSbTe Films
journal, May 2001

Scherrer after sixty years: A survey and some new results in the determination of crystallite size
journal, April 1978