skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ohmic contacts on n-type β-Ga 2O 3 using AZO/Ti/Au

Abstract

AZO interlayers between n-Ga 2O 3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga 2O 3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10 -5 Ω-cm 2 were achieved after a relatively low temperature 400°C annealing. In conclusion, the conduction band offset between AZO and Ga 2O 3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

Authors:
ORCiD logo [1];  [1];  [1];  [1]; ORCiD logo [1];  [2];  [3]; ORCiD logo [4]
+ Show Author Affiliations
  1. Univ. of Florida, Gainesville, FL (United States)
  2. Dankook Univ., Yongin (Korea)
  3. Japan and Novel Crystal Technology, Inc., Saitama (Japan)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1394628
Alternate Identifier(s):
OSTI ID: 1390352
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 7; Journal Issue: 9; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Carey, IV, Patrick H., Yang, Jiancheng, Ren, F., Hays, David C., Pearton, S. J., Jang, Soohwan, Kuramata, Akito, and Kravchenko, Ivan I. Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au. United States: N. p., 2017. Web. doi:10.1063/1.4996172.
Copy to clipboard
Carey, IV, Patrick H., Yang, Jiancheng, Ren, F., Hays, David C., Pearton, S. J., Jang, Soohwan, Kuramata, Akito, & Kravchenko, Ivan I. Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au. United States. doi:10.1063/1.4996172.
Copy to clipboard
Carey, IV, Patrick H., Yang, Jiancheng, Ren, F., Hays, David C., Pearton, S. J., Jang, Soohwan, Kuramata, Akito, and Kravchenko, Ivan I. Thu . "Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au". United States. doi:10.1063/1.4996172. https://www.osti.gov/servlets/purl/1394628.
Copy to clipboard
@article{osti_1394628,
title = {Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au},
author = {Carey, IV, Patrick H. and Yang, Jiancheng and Ren, F. and Hays, David C. and Pearton, S. J. and Jang, Soohwan and Kuramata, Akito and Kravchenko, Ivan I.},
abstractNote = {AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. In conclusion, the conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.},
doi = {10.1063/1.4996172},
journal = {AIP Advances},
number = 9,
volume = 7,
place = {United States},
year = {2017},
month = {9}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI:  10.1063/1.4996172
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 11 works
Citation information provided by
Web of Science
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Formation of indium–tin oxide ohmic contacts for β-Ga 2 O 3
journal, October 2016

  • Oshima, Takayoshi; Wakabayashi, Ryo; Hattori, Mai
  • Japanese Journal of Applied Physics, Vol. 55, Issue 12
  • DOI: 10.7567/jjap.55.1202b7

Perspective—Opportunities and Future Directions for Ga 2 O 3
journal, January 2017

  • Mastro, Michael A.; Kuramata, Akito; Calkins, Jacob
  • ECS Journal of Solid State Science and Technology, Vol. 6, Issue 5
  • DOI: 10.1149/2.0031707jss

Transparent aluminium zinc oxide thin films with enhanced thermoelectric properties
journal, January 2014

  • Loureiro, Joana; Neves, Nuno; Barros, Raquel
  • J. Mater. Chem. A, Vol. 2, Issue 18
  • DOI: 10.1039/c3ta15052f

Field-Plated Ga 2 O 3 MOSFETs With a Breakdown Voltage of Over 750 V
journal, February 2016

  • Wong, Man Hoi; Sasaki, Kohei; Kuramata, Akito
  • IEEE Electron Device Letters, Vol. 37, Issue 2
  • DOI: 10.1109/led.2015.2512279

Structural and optical characterization of ZnO and AZO thin films: the influence of post-annealing
journal, October 2015

  • Dejam, Laya; Mohammad Elahi, S.; Nazari, Heydar Honarvar
  • Journal of Materials Science: Materials in Electronics, Vol. 27, Issue 1
  • DOI: 10.1007/s10854-015-3804-7

Investigation of Different Metals as Ohmic Contacts to β-Ga2O3: Comparison and Analysis of Electrical Behavior, Morphology, and Other Physical Properties
journal, November 2016

  • Yao, Yao; Davis, Robert F.; Porter, Lisa M.
  • Journal of Electronic Materials, Vol. 46, Issue 4
  • DOI: 10.1007/s11664-016-5121-1

Recent progress in Ga 2 O 3 power devices
journal, January 2016

  • Higashiwaki, Masataka; Sasaki, Kohei; Murakami, Hisashi
  • Semiconductor Science and Technology, Vol. 31, Issue 3
  • DOI: 10.1088/0268-1242/31/3/034001

Exfoliated β-Ga 2 O 3 nano-belt field-effect transistors for air-stable high power and high temperature electronics
journal, January 2016

  • Kim, Janghyuk; Oh, Sooyeoun; Mastro, Michael A.
  • Physical Chemistry Chemical Physics, Vol. 18, Issue 23
  • DOI: 10.1039/c6cp01987k

High-voltage field effect transistors with wide-bandgap β -Ga 2 O 3 nanomembranes
journal, May 2014

  • Hwang, Wan Sik; Verma, Amit; Peelaers, Hartwin
  • Applied Physics Letters, Vol. 104, Issue 20
  • DOI: 10.1063/1.4879800

Fabrication of aluminium doped zinc oxide (AZO) transparent conductive oxide by ultrasonic spray pyrolysis
journal, December 2012

Comparison of Aluminum Zinc Oxide and Indium Tin Oxide for Transparent Conductive Oxide layer in Cu(In,Ga)Se 2 Solar Cell
journal, January 2013

  • Yun, Tae-Young; Park, Soon-Rok; Baek, Ju-Young
  • Molecular Crystals and Liquid Crystals, Vol. 586, Issue 1
  • DOI: 10.1080/15421406.2013.851530

Crystal Structure of Piezoelectric Ferromagnetic Gallium Iron Oxide
journal, June 1965

  • Abrahams, S. C.; Reddy, J. M.; Bernstein, J. L.
  • The Journal of Chemical Physics, Vol. 42, Issue 11
  • DOI: 10.1063/1.1695868

Homoepitaxial growth of β-Ga 2 O 3 layers by halide vapor phase epitaxy
journal, December 2014

  • Murakami, Hisashi; Nomura, Kazushiro; Goto, Ken
  • Applied Physics Express, Vol. 8, Issue 1
  • DOI: 10.7567/apex.8.015503

Si-Ion Implantation Doping in β-Ga 2 O 3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts
journal, August 2013

  • Sasaki, Kohei; Higashiwaki, Masataka; Kuramata, Akito
  • Applied Physics Express, Vol. 6, Issue 8
  • DOI: 10.7567/apex.6.086502

Editors' Choice Communication—A (001) β-Ga 2 O 3 MOSFET with +2.9 V Threshold Voltage and HfO 2 Gate Dielectric
journal, January 2016

  • Tadjer, Marko J.; Mahadik, Nadeemullah A.; Wheeler, Virginia D.
  • ECS Journal of Solid State Science and Technology, Vol. 5, Issue 9
  • DOI: 10.1149/2.0061609jss

Effect of front and back gates on β-Ga 2 O 3 nano-belt field-effect transistors
journal, August 2016

  • Ahn, Shihyun; Ren, Fan; Kim, Janghyuk
  • Applied Physics Letters, Vol. 109, Issue 6
  • DOI: 10.1063/1.4960651

Heteroepitaxy of N-type β-Ga 2 O 3 thin films on sapphire substrate by low pressure chemical vapor deposition
journal, September 2016

  • Rafique, Subrina; Han, Lu; Neal, Adam T.
  • Applied Physics Letters, Vol. 109, Issue 13
  • DOI: 10.1063/1.4963820

Growth of Ga2O3 by furnace oxidation of GaN studied by perturbed angular correlations
journal, August 2016

  • Steffens, Michael; Vianden, Reiner; Pasquevich, Alberto F.
  • Hyperfine Interactions, Vol. 237, Issue 1
  • DOI: 10.1007/s10751-016-1326-1

Valence and conduction band offsets in AZO/Ga2O3 heterostructures
journal, July 2017

Group-III Sesquioxides: Growth, Physical Properties and Devices
journal, July 2017

Visible-blind and solar-blind ultraviolet photodiodes based on (In x Ga 1− x ) 2 O 3
journal, March 2016

  • Zhang, Zhipeng; von Wenckstern, Holger; Lenzner, Jörg
  • Applied Physics Letters, Vol. 108, Issue 12
  • DOI: 10.1063/1.4944860

Band Alignments of Atomic Layer Deposited ZrO 2 and HfO 2 High-k Dielectrics with (-201) β-Ga 2 O 3
journal, December 2016

  • Wheeler, Virginia D.; Shahin, David I.; Tadjer, Marko J.
  • ECS Journal of Solid State Science and Technology, Vol. 6, Issue 2
  • DOI: 10.1149/2.0131702jss

Present status and future prospects for development of non- or reduced-indium transparent conducting oxide thin films
journal, December 2008

High pulsed current density β -Ga 2 O 3 MOSFETs verified by an analytical model corrected for interface charge
journal, April 2017

  • Moser, Neil A.; McCandless, Jonathan P.; Crespo, Antonio
  • Applied Physics Letters, Vol. 110, Issue 14
  • DOI: 10.1063/1.4979789

On the bulk β-Ga2O3 single crystals grown by the Czochralski method
journal, October 2014

Analogies in the Gallia and Alumina Systems. The Preparation and Properties of Some Low-Alkali Gallates 1
journal, April 1951

  • Foster, L. M.; Stumpf, H. C.
  • Journal of the American Chemical Society, Vol. 73, Issue 4
  • DOI: 10.1021/ja01148a052

High-Performance and Low-Cost Aluminum Zinc Oxide and Gallium Zinc Oxide Electrodes for Liquid Crystal Displays
journal, October 2016

  • Varanytsia, Andrii; Weng, Libo; Lin, Tzu-Chieh
  • Journal of Display Technology, Vol. 12, Issue 10
  • DOI: 10.1109/jdt.2016.2584779

$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates
journal, April 2013

  • Sasaki, Kohei; Higashiwaki, Masataka; Kuramata, Akito
  • IEEE Electron Device Letters, Vol. 34, Issue 4
  • DOI: 10.1109/led.2013.2244057

Enhancement-mode Ga 2 O 3 wrap-gate fin field-effect transistors on native (100) β -Ga 2 O 3 substrate with high breakdown voltage
journal, November 2016

  • Chabak, Kelson D.; Moser, Neil; Green, Andrew J.
  • Applied Physics Letters, Vol. 109, Issue 21
  • DOI: 10.1063/1.4967931

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga 2 O 3 MOSFETs
journal, July 2016

  • Green, Andrew J.; Chabak, Kelson D.; Heller, Eric R.
  • IEEE Electron Device Letters, Vol. 37, Issue 7
  • DOI: 10.1109/led.2016.2568139

Schottky barrier height of Au on the transparent semiconducting oxide β -Ga 2 O 3
journal, September 2012

  • Mohamed, M.; Irmscher, K.; Janowitz, C.
  • Applied Physics Letters, Vol. 101, Issue 13
  • DOI: 10.1063/1.4755770

Electrical properties of β -Ga 2 O 3 single crystals grown by the Czochralski method
journal, September 2011

  • Irmscher, K.; Galazka, Z.; Pietsch, M.
  • Journal of Applied Physics, Vol. 110, Issue 6
  • DOI: 10.1063/1.3642962
    [ × clear filter / sort ]

    Works referencing / citing this record:

    Current transport mechanism of Mg/Au ohmic contacts to lightly doped n-type β -Ga 2 O 3
    journal, January 2019

      [ × clear filter / sort ]

      Similar Records in DOE PAGES and OSTI.GOV collections: