Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au
Abstract
AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. In conclusion, the conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.
- Authors:
-
- Univ. of Florida, Gainesville, FL (United States)
- Dankook Univ., Yongin (Korea)
- Japan and Novel Crystal Technology, Inc., Saitama (Japan)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1394628
- Alternate Identifier(s):
- OSTI ID: 1390352
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- AIP Advances
- Additional Journal Information:
- Journal Volume: 7; Journal Issue: 9; Journal ID: ISSN 2158-3226
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Carey, IV, Patrick H., Yang, Jiancheng, Ren, F., Hays, David C., Pearton, S. J., Jang, Soohwan, Kuramata, Akito, and Kravchenko, Ivan I. Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au. United States: N. p., 2017.
Web. doi:10.1063/1.4996172.
Carey, IV, Patrick H., Yang, Jiancheng, Ren, F., Hays, David C., Pearton, S. J., Jang, Soohwan, Kuramata, Akito, & Kravchenko, Ivan I. Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au. United States. https://doi.org/10.1063/1.4996172
Carey, IV, Patrick H., Yang, Jiancheng, Ren, F., Hays, David C., Pearton, S. J., Jang, Soohwan, Kuramata, Akito, and Kravchenko, Ivan I. Thu .
"Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au". United States. https://doi.org/10.1063/1.4996172. https://www.osti.gov/servlets/purl/1394628.
@article{osti_1394628,
title = {Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au},
author = {Carey, IV, Patrick H. and Yang, Jiancheng and Ren, F. and Hays, David C. and Pearton, S. J. and Jang, Soohwan and Kuramata, Akito and Kravchenko, Ivan I.},
abstractNote = {AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. In conclusion, the conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.},
doi = {10.1063/1.4996172},
journal = {AIP Advances},
number = 9,
volume = 7,
place = {United States},
year = {2017},
month = {9}
}
Web of Science
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