Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

Carey, IV, Patrick H.; Yang, Jiancheng; Ren, F.; Hays, David C.; Pearton, S. J.; Jang, Soohwan; Kuramata, Akito; Kravchenko, Ivan I.

doi:10.1063/1.4996172

Title: Ohmic contacts on n-type β-Ga₂O₃ using AZO/Ti/Au

Journal Article · 13 September 2017 · AIP Advances

DOI: https://doi.org/10.1063/1.4996172 · OSTI ID:1394628

^[1]; Yang, Jiancheng ^[1]; Ren, F. ^[1]; Hays, David C. ^[1];

^[1]; Jang, Soohwan ^[2]; Kuramata, Akito ^[3];

^[4]

Univ. of Florida, Gainesville, FL (United States)
Dankook Univ., Yongin (Korea)
Japan and Novel Crystal Technology, Inc., Saitama (Japan)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

AZO interlayers between n-Ga₂O₃ and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga₂O₃ stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10^-5 Ω-cm² were achieved after a relatively low temperature 400°C annealing. In conclusion, the conduction band offset between AZO and Ga₂O₃ is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1394628

Alternate ID(s):: OSTI ID: 1390352

Journal Information:: AIP Advances, Journal Name: AIP Advances Journal Issue: 9 Vol. 7; ISSN 2158-3226

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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