Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

doi:10.1063/1.4996172

Title: Ohmic contacts on n-type β-Ga ₂O ₃ using AZO/Ti/Au

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AZO interlayers between n-Ga ₂O ₃ and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga ₂O ₃ stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10 ^-5 Ω-cm ² were achieved after a relatively low temperature 400°C annealing. In conclusion, the conduction band offset between AZO and Ga ₂O ₃ is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

Authors:

; Yang, Jiancheng ^[1] ; Ren, F. ^[1] ; Hays, David C. ^[1] ; ; Jang, Soohwan ^[2] ; Kuramata, Akito ^[3] ;

Univ. of Florida, Gainesville, FL (United States)
Dankook Univ., Yongin (Korea)
Japan and Novel Crystal Technology, Inc., Saitama (Japan)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Publication Date:: 2017-09-14

Grant/Contract Number:: AC05-00OR22725

Type:: Accepted Manuscript

Journal Name:: AIP Advances

Additional Journal Information:: Journal Volume: 7; Journal Issue: 9; Journal ID: ISSN 2158-3226

Publisher:: American Institute of Physics (AIP)

Research Org:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Org:: USDOE Office of Science (SC)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

OSTI Identifier:: 1394628

Alternate Identifier(s):: OSTI ID: 1390352


                    Carey, IV, Patrick H., Yang, Jiancheng, Ren, F., Hays, David C., Pearton, S. J., Jang, Soohwan, Kuramata, Akito, and Kravchenko, Ivan I.. Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au.  United States: N. p.,  
        Web.  doi:10.1063/1.4996172.

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                    Carey, IV, Patrick H., Yang, Jiancheng, Ren, F., Hays, David C., Pearton, S. J., Jang, Soohwan, Kuramata, Akito, & Kravchenko, Ivan I.. Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au.  United States.  doi:10.1063/1.4996172.

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                    Carey, IV, Patrick H., Yang, Jiancheng, Ren, F., Hays, David C., Pearton, S. J., Jang, Soohwan, Kuramata, Akito, and Kravchenko, Ivan I.. 2017.  
        "Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au".  United States.  
        doi:10.1063/1.4996172.  https://www.osti.gov/servlets/purl/1394628.

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@article{osti_1394628,

  title        = {Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au},

  author       = {Carey, IV, Patrick H. and Yang, Jiancheng and Ren, F. and Hays, David C. and Pearton, S. J. and Jang, Soohwan and Kuramata, Akito and Kravchenko, Ivan I.},

  abstractNote = {AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. In conclusion, the conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.},

  doi          = {10.1063/1.4996172},

  journal      = {AIP Advances},

  number       = 9,

  volume       = 7,

  place        = {United States},

  year         = {2017},

  month        = {9}

}

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Title: Ohmic contacts on n-type β-Ga 2O 3 using AZO/Ti/Au

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Title: Ohmic contacts on n-type β-Ga ₂O ₃ using AZO/Ti/Au