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Title: Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

Abstract

AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. In conclusion, the conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

Authors:
ORCiD logo [1];  [1];  [1];  [1]; ORCiD logo [1];  [2];  [3]; ORCiD logo [4]
+ Show Author Affiliations
  1. Univ. of Florida, Gainesville, FL (United States)
  2. Dankook Univ., Yongin (Korea)
  3. Japan and Novel Crystal Technology, Inc., Saitama (Japan)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1394628
Alternate Identifier(s):
OSTI ID: 1390352
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 7; Journal Issue: 9; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Carey, IV, Patrick H., Yang, Jiancheng, Ren, F., Hays, David C., Pearton, S. J., Jang, Soohwan, Kuramata, Akito, and Kravchenko, Ivan I. Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au. United States: N. p., 2017. Web. doi:10.1063/1.4996172.
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Carey, IV, Patrick H., Yang, Jiancheng, Ren, F., Hays, David C., Pearton, S. J., Jang, Soohwan, Kuramata, Akito, & Kravchenko, Ivan I. Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au. United States. https://doi.org/10.1063/1.4996172
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Carey, IV, Patrick H., Yang, Jiancheng, Ren, F., Hays, David C., Pearton, S. J., Jang, Soohwan, Kuramata, Akito, and Kravchenko, Ivan I. Thu . "Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au". United States. https://doi.org/10.1063/1.4996172. https://www.osti.gov/servlets/purl/1394628.
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@article{osti_1394628,
title = {Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au},
author = {Carey, IV, Patrick H. and Yang, Jiancheng and Ren, F. and Hays, David C. and Pearton, S. J. and Jang, Soohwan and Kuramata, Akito and Kravchenko, Ivan I.},
abstractNote = {AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. In conclusion, the conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.},
doi = {10.1063/1.4996172},
journal = {AIP Advances},
number = 9,
volume = 7,
place = {United States},
year = {2017},
month = {9}
}
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https://doi.org/10.1063/1.4996172
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    Works referencing / citing this record:

    Low resistivity ohmic contacts on lightly doped n-type β-Ga2O3 using Mg/Au
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    Current transport mechanism of Mg/Au ohmic contacts to lightly doped n-type β -Ga 2 O 3
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    Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 ( 2 ¯ 01 $$ \overline{2}01 $$ ) Heterojunctions
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    • Chen, Xuanhu; Ren, Fangfang; Gu, Shulin
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