skip to main content

DOE PAGESDOE PAGES

Title: Ohmic contacts on n-type β-Ga 2O 3 using AZO/Ti/Au

AZO interlayers between n-Ga 2O 3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga 2O 3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10 -5 Ω-cm 2 were achieved after a relatively low temperature 400°C annealing. In conclusion, the conduction band offset between AZO and Ga 2O 3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.
Authors:
ORCiD logo [1] ;  [1] ;  [1] ;  [1] ; ORCiD logo [1] ;  [2] ;  [3] ; ORCiD logo [4]
  1. Univ. of Florida, Gainesville, FL (United States)
  2. Dankook Univ., Yongin (Korea)
  3. Japan and Novel Crystal Technology, Inc., Saitama (Japan)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 7; Journal Issue: 9; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1394628
Alternate Identifier(s):
OSTI ID: 1390352