Ohmic contacts on n-type β-Ga 2O 3 using AZO/Ti/Au
AZO interlayers between n-Ga 2O 3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga 2O 3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10 -5 Ω-cm 2 were achieved after a relatively low temperature 400°C annealing. In conclusion, the conduction band offset between AZO and Ga 2O 3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.
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- Univ. of Florida, Gainesville, FL (United States)
- Dankook Univ., Yongin (Korea)
- Japan and Novel Crystal Technology, Inc., Saitama (Japan)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Publication Date:
- Grant/Contract Number:
- AC05-00OR22725
- Type:
- Accepted Manuscript
- Journal Name:
- AIP Advances
- Additional Journal Information:
- Journal Volume: 7; Journal Issue: 9; Journal ID: ISSN 2158-3226
- Publisher:
- American Institute of Physics (AIP)
- Research Org:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org:
- USDOE Office of Science (SC)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
- OSTI Identifier:
- 1394628
- Alternate Identifier(s):
- OSTI ID: 1390352
- Free Publicly Accessible Full Text
- Accepted Manuscript (Publisher)
-
Accepted Manuscript (DOE)
- Publisher's Version of Record
- https://doi.org/10.1063/1.4996172