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Title: Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

Journal Article · · AIP Advances
DOI: https://doi.org/10.1063/1.4996172 · OSTI ID:1394628

AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. In conclusion, the conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1394628
Alternate ID(s):
OSTI ID: 1390352
Journal Information:
AIP Advances, Journal Name: AIP Advances Journal Issue: 9 Vol. 7; ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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Cited By (10)

Review of gallium-oxide-based solar-blind ultraviolet photodetectors journal January 2019
Investigation of energy band at atomic layer deposited AZO/β-Ga2O3 ($$ \overline{2}01 $$) heterojunctions journal August 2019
Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 ( 2 ¯ 01 $$ \overline{2}01 $$ ) Heterojunctions journal December 2018
Band alignment of In 2 O 3 /β-Ga 2 O 3 interface determined by X-ray photoelectron spectroscopy journal July 2018
Recent Advances in β-Ga2O3–Metal Contacts journal August 2018
A review of Ga 2 O 3 materials, processing, and devices journal March 2018
Current transport mechanism of Mg/Au ohmic contacts to lightly doped n-type β -Ga 2 O 3 journal January 2019
Recent Advances in β-Ga2O3–Metal Contacts journal August 2018
Low resistivity ohmic contacts on lightly doped n-type β-Ga2O3 using Mg/Au journal January 2019
Valence and conduction band offsets for sputtered AZO and ITO on (010) (Al 0.14 Ga 0.86 ) 2 O 3 journal January 2019

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