skip to main content


Title: Disorder from the Bulk Ionic Liquid in Electric Double Layer Transistors

Ionic liquid gating has a number of advantages over solid-state gating, especially for flexible or transparent devices and for applications requiring high carrier densities. But, the large number of charged ions near the channel inevitably results in Coulomb scattering, which limits the carrier mobility in otherwise clean systems. We develop a model for this Coulomb scattering. We then validate our model experimentally using ionic liquid gating of graphene across varying thicknesses of hexagonal boron nitride, demonstrating that disorder in the bulk ionic liquid often dominates the scattering.
ORCiD logo [1] ;  [2] ;  [3] ;  [4] ;  [4] ;  [5] ;  [1]
  1. Stanford Univ., CA (United States). Dept. of Applied Physics; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences (SIMES)
  2. Univ. of Minnesota, Minneapolis, MN (United States). FineTheoretical Physics Inst.; Ioffe Inst., St. Petersburg (Russia)
  3. Stanford Univ., CA (United States). Dept. of Applied Physics
  4. National Inst. for Materials Science (NIMS), Tsukuba (Japan)
  5. Fine Theoretical Physics Institute, University of Minnesota, Minneapolis, Minnesota 55455, United States
Publication Date:
Grant/Contract Number:
JP15K21722; 17-72-10072; AC02-76SF00515
Accepted Manuscript
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 11; Journal Issue: 8; Journal ID: ISSN 1936-0851
American Chemical Society (ACS)
Research Org:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org:
USDOE; National Science Foundation (NSF)
Country of Publication:
United States
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; boron nitride; electronic transport; field-effect transistor; graphene; ionic liquid
OSTI Identifier: