Investigation of nanoparticulate silicon as printed layers using scanning electron microscopy, transmission electron microscopy, X-ray absorption spectroscopy and X-ray photoelectron spectroscopy

Unuigbe, David M.; Harting, Margit; Jonah, Emmanuel O.; Britton, David T.; Nordlund, Dennis

doi:10.1107/S1600577517009857

Title: Investigation of nanoparticulate silicon as printed layers using scanning electron microscopy, transmission electron microscopy, X-ray absorption spectroscopy and X-ray photoelectron spectroscopy

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Abstract

The presence of native oxide on the surface of silicon nanoparticles is known to inhibit charge transport on the surfaces. Scanning electron microscopy (SEM) studies reveal that the particles in the printed silicon network have a wide range of sizes and shapes. High-resolution transmission electron microscopy reveals that the particle surfaces have mainly the (111)- and (100)-oriented planes which stabilizes against further oxidation of the particles. X-ray absorption spectroscopy (XANES) and X-ray photoelectron spectroscopy (XPS) measurements at the O 1s-edge have been utilized to study the oxidation and local atomic structure of printed layers of silicon nanoparticles which were milled for different times. XANES results reveal the presence of the +4 (SiO₂) oxidation state which tends towards the +2 (SiO) state for higher milling times. Si 2pXPS results indicate that the surfaces of the silicon nanoparticles in the printed layers are only partially oxidized and that all three sub-oxide, +1 (Si₂O), +2 (SiO) and +3 (Si₂O₃), states are present. The analysis of the change in the sub-oxide peaks of the silicon nanoparticles shows the dominance of the +4 state only for lower milling times.

Authors:

Unuigbe, David M. ^[1]; Harting, Margit ^[2]; Jonah, Emmanuel O. ^[2]; Britton, David T. ^[2]; Nordlund, Dennis ^[3]

Univ. of Cape Town (South Africa). NanoSciences Innovation Centre
PST SEnsors Ltd., Cape Town (South Africa)
SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource

Publication Date:: Mon Aug 21 00:00:00 EDT 2017

Research Org.:: SLAC National Accelerator Lab., Menlo Park, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1394081

Grant/Contract Number:: AC02-76SF00515

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Synchrotron Radiation (Online)

Additional Journal Information:: Journal Name: Journal of Synchrotron Radiation (Online); Journal Volume: 24; Journal Issue: 5; Journal ID: ISSN 1600-5775

Publisher:: International Union of Crystallography

Country of Publication:: United States

Language:: English

Subject:: 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 36 MATERIALS SCIENCE

Citation Formats


                    Unuigbe, David M., Harting, Margit, Jonah, Emmanuel O., Britton, David T., and Nordlund, Dennis. Investigation of nanoparticulate silicon as printed layers using scanning electron microscopy, transmission electron microscopy, X-ray absorption spectroscopy and X-ray photoelectron spectroscopy.  United States: N. p., 2017. 
Web.  doi:10.1107/S1600577517009857.

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                    Unuigbe, David M., Harting, Margit, Jonah, Emmanuel O., Britton, David T., & Nordlund, Dennis. Investigation of nanoparticulate silicon as printed layers using scanning electron microscopy, transmission electron microscopy, X-ray absorption spectroscopy and X-ray photoelectron spectroscopy.  United States.  https://doi.org/10.1107/S1600577517009857

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                    Unuigbe, David M., Harting, Margit, Jonah, Emmanuel O., Britton, David T., and Nordlund, Dennis. Mon .  
"Investigation of nanoparticulate silicon as printed layers using scanning electron microscopy, transmission electron microscopy, X-ray absorption spectroscopy and X-ray photoelectron spectroscopy".  United States.  https://doi.org/10.1107/S1600577517009857.  https://www.osti.gov/servlets/purl/1394081.

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@article{osti_1394081,

  title        = {Investigation of nanoparticulate silicon as printed layers using scanning electron microscopy, transmission electron microscopy, X-ray absorption spectroscopy and X-ray photoelectron spectroscopy},

  author       = {Unuigbe, David M. and Harting, Margit and Jonah, Emmanuel O. and Britton, David T. and Nordlund, Dennis},

  abstractNote = {The presence of native oxide on the surface of silicon nanoparticles is known to inhibit charge transport on the surfaces. Scanning electron microscopy (SEM) studies reveal that the particles in the printed silicon network have a wide range of sizes and shapes. High-resolution transmission electron microscopy reveals that the particle surfaces have mainly the (111)- and (100)-oriented planes which stabilizes against further oxidation of the particles. X-ray absorption spectroscopy (XANES) and X-ray photoelectron spectroscopy (XPS) measurements at the O 1s-edge have been utilized to study the oxidation and local atomic structure of printed layers of silicon nanoparticles which were milled for different times. XANES results reveal the presence of the +4 (SiO2) oxidation state which tends towards the +2 (SiO) state for higher milling times. Si 2pXPS results indicate that the surfaces of the silicon nanoparticles in the printed layers are only partially oxidized and that all three sub-oxide, +1 (Si2O), +2 (SiO) and +3 (Si2O3), states are present. The analysis of the change in the sub-oxide peaks of the silicon nanoparticles shows the dominance of the +4 state only for lower milling times.},

  doi          = {10.1107/S1600577517009857},

  journal      = {Journal of Synchrotron Radiation (Online)},

  number       = 5,

  volume       = 24,

  place        = {United States},

  year         = {Mon Aug 21 00:00:00 EDT 2017},

  month        = {Mon Aug 21 00:00:00 EDT 2017}

}

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