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Title: Magnetic Proximity Effects in Transition-Metal Dichalcogenides: Converting Excitons

Authors:
; ; ;
Publication Date:
Grant/Contract Number:
SC0004890
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 119 Journal Issue: 12; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1394015

Scharf, Benedikt, Xu, Gaofeng, Matos-Abiague, Alex, and Žutić, Igor. Magnetic Proximity Effects in Transition-Metal Dichalcogenides: Converting Excitons. United States: N. p., Web. doi:10.1103/PhysRevLett.119.127403.
Scharf, Benedikt, Xu, Gaofeng, Matos-Abiague, Alex, & Žutić, Igor. Magnetic Proximity Effects in Transition-Metal Dichalcogenides: Converting Excitons. United States. doi:10.1103/PhysRevLett.119.127403.
Scharf, Benedikt, Xu, Gaofeng, Matos-Abiague, Alex, and Žutić, Igor. 2017. "Magnetic Proximity Effects in Transition-Metal Dichalcogenides: Converting Excitons". United States. doi:10.1103/PhysRevLett.119.127403.
@article{osti_1394015,
title = {Magnetic Proximity Effects in Transition-Metal Dichalcogenides: Converting Excitons},
author = {Scharf, Benedikt and Xu, Gaofeng and Matos-Abiague, Alex and Žutić, Igor},
abstractNote = {},
doi = {10.1103/PhysRevLett.119.127403},
journal = {Physical Review Letters},
number = 12,
volume = 119,
place = {United States},
year = {2017},
month = {9}
}

Works referenced in this record:

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
journal, November 2012
  • Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras
  • Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712
  • DOI: 10.1038/nnano.2012.193