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Title: High Conduction Hopping Behavior Induced in Transition Metal Dichalcogenides by Percolating Defect Networks: Toward Atomically Thin Circuits

Authors:
ORCiD logo [1]; ORCiD logo [1];  [2];  [1];  [2];  [2];  [3];  [2];  [2];  [2];  [2];  [2];  [4];  [5]
  1. Department of Materials Science and EngineeringUniversity of Tennessee Knoxville TN 37996 USA
  2. Center for Nanophase Materials SciencesOak Ridge National Laboratory Oak Ridge TN 37831 USA
  3. Department of Materials Science and EngineeringUniversity of Tennessee Knoxville TN 37996 USA, Materials Science and Technology DivisionOak Ridge National Laboratory Oak Ridge TN 37831 USA
  4. Center for Nanophase Materials SciencesOak Ridge National Laboratory Oak Ridge TN 37831 USA, Computational Sciences &, Engineering DivisionOak Ridge National Laboratory Oak Ridge TN 37831 USA
  5. Department of Materials Science and EngineeringUniversity of Tennessee Knoxville TN 37996 USA, Center for Nanophase Materials SciencesOak Ridge National Laboratory Oak Ridge TN 37831 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1394006
Grant/Contract Number:  
DOE DE‐SC0002136
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Functional Materials
Additional Journal Information:
Journal Name: Advanced Functional Materials Journal Volume: 27 Journal Issue: 36; Journal ID: ISSN 1616-301X
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Stanford, Michael G., Pudasaini, Pushpa R., Gallmeier, Elisabeth T., Cross, Nicholas, Liang, Liangbo, Oyedele, Akinola, Duscher, Gerd, Mahjouri‐Samani, Masoud, Wang, Kai, Xiao, Kai, Geohegan, David B., Belianinov, Alex, Sumpter, Bobby G., and Rack, Philip D. High Conduction Hopping Behavior Induced in Transition Metal Dichalcogenides by Percolating Defect Networks: Toward Atomically Thin Circuits. Germany: N. p., 2017. Web. doi:10.1002/adfm.201702829.
Stanford, Michael G., Pudasaini, Pushpa R., Gallmeier, Elisabeth T., Cross, Nicholas, Liang, Liangbo, Oyedele, Akinola, Duscher, Gerd, Mahjouri‐Samani, Masoud, Wang, Kai, Xiao, Kai, Geohegan, David B., Belianinov, Alex, Sumpter, Bobby G., & Rack, Philip D. High Conduction Hopping Behavior Induced in Transition Metal Dichalcogenides by Percolating Defect Networks: Toward Atomically Thin Circuits. Germany. doi:10.1002/adfm.201702829.
Stanford, Michael G., Pudasaini, Pushpa R., Gallmeier, Elisabeth T., Cross, Nicholas, Liang, Liangbo, Oyedele, Akinola, Duscher, Gerd, Mahjouri‐Samani, Masoud, Wang, Kai, Xiao, Kai, Geohegan, David B., Belianinov, Alex, Sumpter, Bobby G., and Rack, Philip D. Tue . "High Conduction Hopping Behavior Induced in Transition Metal Dichalcogenides by Percolating Defect Networks: Toward Atomically Thin Circuits". Germany. doi:10.1002/adfm.201702829.
@article{osti_1394006,
title = {High Conduction Hopping Behavior Induced in Transition Metal Dichalcogenides by Percolating Defect Networks: Toward Atomically Thin Circuits},
author = {Stanford, Michael G. and Pudasaini, Pushpa R. and Gallmeier, Elisabeth T. and Cross, Nicholas and Liang, Liangbo and Oyedele, Akinola and Duscher, Gerd and Mahjouri‐Samani, Masoud and Wang, Kai and Xiao, Kai and Geohegan, David B. and Belianinov, Alex and Sumpter, Bobby G. and Rack, Philip D.},
abstractNote = {},
doi = {10.1002/adfm.201702829},
journal = {Advanced Functional Materials},
number = 36,
volume = 27,
place = {Germany},
year = {2017},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1002/adfm.201702829

Citation Metrics:
Cited by: 6 works
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