A stochastic model of solid state thin film deposition: Application to chalcopyrite growth
Abstract
Developing high fidelity quantitative models of solid state reaction systems can be challenging, especially in deposition systems where, in addition to the multiple competing processes occurring simultaneously, the solid interacts with its atmosphere. Here, we develop a model for the growth of a thin solid film where species from the atmosphere adsorb, diffuse, and react with the film. The model is mesoscale and describes an entire film with thickness on the order of microns. Because it is stochastic, the model allows us to examine inhomogeneities and agglomerations that would be impossible to characterize with deterministic methods. We also demonstrate the modeling approach with the example of chalcopyrite Cu(InGa)(SeS)2 thin film growth via precursor reaction, which is a common industrial method for fabricating thin film photovoltaic modules. The model is used to understand how and why through-film variation in the composition of Cu(InGa)(SeS)2 thin films arises and persists. Finally, we believe that the model will be valuable as an effective quantitative description of many other materials systems used in semiconductors, energy storage, and other fast-growing industries.
- Publication Date:
- Research Org.:
- Univ. of Delaware, Newark, DE (United States)
- Sponsoring Org.:
- USDOE; National Science Foundation (NSF)
- OSTI Identifier:
- 1249956
- Alternate Identifier(s):
- OSTI ID: 1393916; OSTI ID: 1421037
- Grant/Contract Number:
- EEC-1041895
- Resource Type:
- Published Article
- Journal Name:
- AIP Advances
- Additional Journal Information:
- Journal Name: AIP Advances Journal Volume: 6 Journal Issue: 4; Journal ID: ISSN 2158-3226
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Lovelett, Robert J., Pang, Xueqi, Roberts, Tyler M., Shafarman, William N., Birkmire, Robert W., and Ogunnaike, Babatunde A. A stochastic model of solid state thin film deposition: Application to chalcopyrite growth. United States: N. p., 2016.
Web. doi:10.1063/1.4948404.
Lovelett, Robert J., Pang, Xueqi, Roberts, Tyler M., Shafarman, William N., Birkmire, Robert W., & Ogunnaike, Babatunde A. A stochastic model of solid state thin film deposition: Application to chalcopyrite growth. United States. https://doi.org/10.1063/1.4948404
Lovelett, Robert J., Pang, Xueqi, Roberts, Tyler M., Shafarman, William N., Birkmire, Robert W., and Ogunnaike, Babatunde A. Fri .
"A stochastic model of solid state thin film deposition: Application to chalcopyrite growth". United States. https://doi.org/10.1063/1.4948404.
@article{osti_1249956,
title = {A stochastic model of solid state thin film deposition: Application to chalcopyrite growth},
author = {Lovelett, Robert J. and Pang, Xueqi and Roberts, Tyler M. and Shafarman, William N. and Birkmire, Robert W. and Ogunnaike, Babatunde A.},
abstractNote = {Developing high fidelity quantitative models of solid state reaction systems can be challenging, especially in deposition systems where, in addition to the multiple competing processes occurring simultaneously, the solid interacts with its atmosphere. Here, we develop a model for the growth of a thin solid film where species from the atmosphere adsorb, diffuse, and react with the film. The model is mesoscale and describes an entire film with thickness on the order of microns. Because it is stochastic, the model allows us to examine inhomogeneities and agglomerations that would be impossible to characterize with deterministic methods. We also demonstrate the modeling approach with the example of chalcopyrite Cu(InGa)(SeS)2 thin film growth via precursor reaction, which is a common industrial method for fabricating thin film photovoltaic modules. The model is used to understand how and why through-film variation in the composition of Cu(InGa)(SeS)2 thin films arises and persists. Finally, we believe that the model will be valuable as an effective quantitative description of many other materials systems used in semiconductors, energy storage, and other fast-growing industries.},
doi = {10.1063/1.4948404},
journal = {AIP Advances},
number = 4,
volume = 6,
place = {United States},
year = {Fri Apr 01 00:00:00 EDT 2016},
month = {Fri Apr 01 00:00:00 EDT 2016}
}
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