skip to main content

DOE PAGESDOE PAGES

This content will become publicly available on July 1, 2018

Title: Understanding individual defects in CdTe thin-film solar cells via STEM: From atomic structure to electrical activity

Here in this paper we review a systematic study of the structure-property correlations of a series of defects in CdTe solar cells. A variety of experimental methods, including aberration-corrected scanning transmission electron microscopy, electron energy loss spectroscopy, energy dispersive X-ray spectroscopy, and electron-beam-induced current have been combined with density-functional theory. The research traces the connections between the structures and electrical activities of individual defects including intra-grain partial dislocations, grain boundaries and the CdTe/CdS interface. The interpretations of the physical origin underlying the structure-property correlation provide insights that should further the development of future CdTe solar cells.
Authors:
 [1] ; ORCiD logo [2] ;  [3] ;  [4]
  1. Univ. of Vienna (Austria). Dept. of Lithospheric Research
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
  3. Univ. of Toledo, OH (United States). Dept. of Physics and Astronomy
  4. National Univ. of Singapore (Singapore). Dept. of Materials Science and Engineering
Publication Date:
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
Materials Science in Semiconductor Processing
Additional Journal Information:
Journal Volume: 65; Journal Issue: C; Journal ID: ISSN 1369-8001
Publisher:
Elsevier
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; CdTe solar cells; scanning transmission electron microscopy; dislocation; grain boundary; interface
OSTI Identifier:
1393810