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Title: High efficiency low threshold current 1.3  μ m InAs quantum dot lasers on on-axis (001) GaP/Si

Authors:
 [1] ;  [2] ;  [3] ;  [2] ;  [1] ;  [3] ;  [4] ;  [4]
  1. Institute for Energy Efficiency, University of California Santa Barbara, California 93106, USA
  2. Materials Department, University of California Santa Barbara, California 93106, USA
  3. Department of Electrical and Computer Engineering, University of California Santa Barbara, California 93106, USA
  4. Institute for Energy Efficiency, University of California Santa Barbara, California 93106, USA, Materials Department, University of California Santa Barbara, California 93106, USA, Department of Electrical and Computer Engineering, University of California Santa Barbara, California 93106, USA
Publication Date:
Grant/Contract Number:
AR0000672
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 12; Related Information: CHORUS Timestamp: 2018-02-14 22:13:29; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1393694

Jung, Daehwan, Norman, Justin, Kennedy, M. J., Shang, Chen, Shin, Bongki, Wan, Yating, Gossard, Arthur C., and Bowers, John E.. High efficiency low threshold current 1.3  μ m InAs quantum dot lasers on on-axis (001) GaP/Si. United States: N. p., Web. doi:10.1063/1.4993226.
Jung, Daehwan, Norman, Justin, Kennedy, M. J., Shang, Chen, Shin, Bongki, Wan, Yating, Gossard, Arthur C., & Bowers, John E.. High efficiency low threshold current 1.3  μ m InAs quantum dot lasers on on-axis (001) GaP/Si. United States. doi:10.1063/1.4993226.
Jung, Daehwan, Norman, Justin, Kennedy, M. J., Shang, Chen, Shin, Bongki, Wan, Yating, Gossard, Arthur C., and Bowers, John E.. 2017. "High efficiency low threshold current 1.3  μ m InAs quantum dot lasers on on-axis (001) GaP/Si". United States. doi:10.1063/1.4993226.
@article{osti_1393694,
title = {High efficiency low threshold current 1.3  μ m InAs quantum dot lasers on on-axis (001) GaP/Si},
author = {Jung, Daehwan and Norman, Justin and Kennedy, M. J. and Shang, Chen and Shin, Bongki and Wan, Yating and Gossard, Arthur C. and Bowers, John E.},
abstractNote = {},
doi = {10.1063/1.4993226},
journal = {Applied Physics Letters},
number = 12,
volume = 111,
place = {United States},
year = {2017},
month = {9}
}