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Title: High efficiency low threshold current 1.3  μ m InAs quantum dot lasers on on-axis (001) GaP/Si

Authors:
 [1];  [2];  [3];  [2];  [1];  [3];  [4];  [4]
+ Show Author Affiliations
  1. Institute for Energy Efficiency, University of California Santa Barbara, California 93106, USA
  2. Materials Department, University of California Santa Barbara, California 93106, USA
  3. Department of Electrical and Computer Engineering, University of California Santa Barbara, California 93106, USA
  4. Institute for Energy Efficiency, University of California Santa Barbara, California 93106, USA, Materials Department, University of California Santa Barbara, California 93106, USA, Department of Electrical and Computer Engineering, University of California Santa Barbara, California 93106, USA
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1393694
Grant/Contract Number:  
AR0000672
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 111 Journal Issue: 12; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Jung, Daehwan, Norman, Justin, Kennedy, M. J., Shang, Chen, Shin, Bongki, Wan, Yating, Gossard, Arthur C., and Bowers, John E. High efficiency low threshold current 1.3  μ m InAs quantum dot lasers on on-axis (001) GaP/Si. United States: N. p., 2017. Web. doi:10.1063/1.4993226.
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Jung, Daehwan, Norman, Justin, Kennedy, M. J., Shang, Chen, Shin, Bongki, Wan, Yating, Gossard, Arthur C., & Bowers, John E. High efficiency low threshold current 1.3  μ m InAs quantum dot lasers on on-axis (001) GaP/Si. United States. https://doi.org/10.1063/1.4993226
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Jung, Daehwan, Norman, Justin, Kennedy, M. J., Shang, Chen, Shin, Bongki, Wan, Yating, Gossard, Arthur C., and Bowers, John E. Mon . "High efficiency low threshold current 1.3  μ m InAs quantum dot lasers on on-axis (001) GaP/Si". United States. https://doi.org/10.1063/1.4993226.
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@article{osti_1393694,
title = {High efficiency low threshold current 1.3  μ m InAs quantum dot lasers on on-axis (001) GaP/Si},
author = {Jung, Daehwan and Norman, Justin and Kennedy, M. J. and Shang, Chen and Shin, Bongki and Wan, Yating and Gossard, Arthur C. and Bowers, John E.},
abstractNote = {},
doi = {10.1063/1.4993226},
journal = {Applied Physics Letters},
number = 12,
volume = 111,
place = {United States},
year = {2017},
month = {9}
}
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Journal Article:
Free Publicly Available Full Text
Accepted Manuscript (Publisher)
Publisher's Version of Record
https://doi.org/10.1063/1.4993226
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