Carrier Lifetimes in a III-V-N Intermediate-Band Semiconductor

Heyman, J. N.; Schwartzberg, A. M.; Yu, K. M.; Luce, A. V.; Dubon, O. D.; Kuang, Y. J.; Tu, C. W.; Walukiewicz, W.

doi:10.1103/PhysRevApplied.7.014016

Title: Carrier Lifetimes in a $I I I - V - N$ Intermediate-Band Semiconductor

Abstract

Here we use transient absorption spectroscopy to measure carrier lifetimes in the multiband semiconductor GaP_yAs_1-x-yN_x. These measurements probe the electron populations in the conduction band, intermediate band, and valence band as a function of time after an excitation pulse. Following photoexcitation of GaP_0.32As_0.67N_0.01, we find that the electron population in the conduction band decays exponentially with a time constant τ_CB=23 ps. The electron population in the intermediate band exhibits bimolecular recombination with recombination constant r = 2×10^-8 cm³/s. In our experiment, an optical pump pulse excites electrons from the valence band to the intermediate and conduction bands, and the change in interband absorption due to absorption saturation and induced absorption is probed with a delayed white-light pulse. We model the optical properties of our samples using the band anticrossing model to extract carrier densities as a function of time. Finally, these results not only identify the short minority-carrier lifetime as a key factor affecting the performance of GaP_yAs_1-x-yN_x-based intermediate-band solar cells but also provide guidance on ways to address this issue.

Authors:

Heyman, J. N. ^[1]; Schwartzberg, A. M. ^[2]; Yu, K. M. ^[3]; Luce, A. V. ^[4]; Dubon, O. D. ^[4]; Kuang, Y. J. ^[5]; Tu, C. W. ^[5]; Walukiewicz, W. ^[2]

Macalester College, St. Paul, MN (United States). Physics Dept.
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; City Univ. of Hong Kong (China)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering
Univ. of California, San Diego, CA (United States). Dept. of Physics

Publication Date:: Tue Jan 24 00:00:00 EST 2017

Research Org.:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Research Grants Council of Hong Kong

OSTI Identifier:: 1393609

Alternate Identifier(s):: OSTI ID: 1341267

Grant/Contract Number:: AC02-05CH11231

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review Applied

Additional Journal Information:: Journal Volume: 7; Journal Issue: 1; Journal ID: ISSN 2331-7019

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats


                    Heyman, J. N., Schwartzberg, A. M., Yu, K. M., Luce, A. V., Dubon, O. D., Kuang, Y. J., Tu, C. W., and Walukiewicz, W. Carrier Lifetimes in a III-V-N Intermediate-Band Semiconductor.  United States: N. p., 2017. 
Web.  doi:10.1103/PhysRevApplied.7.014016.

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                    Heyman, J. N., Schwartzberg, A. M., Yu, K. M., Luce, A. V., Dubon, O. D., Kuang, Y. J., Tu, C. W., & Walukiewicz, W. Carrier Lifetimes in a III-V-N Intermediate-Band Semiconductor.  United States.  https://doi.org/10.1103/PhysRevApplied.7.014016

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                    Heyman, J. N., Schwartzberg, A. M., Yu, K. M., Luce, A. V., Dubon, O. D., Kuang, Y. J., Tu, C. W., and Walukiewicz, W. Tue .  
"Carrier Lifetimes in a III-V-N Intermediate-Band Semiconductor".  United States.  https://doi.org/10.1103/PhysRevApplied.7.014016.  https://www.osti.gov/servlets/purl/1393609.

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@article{osti_1393609,

  title        = {Carrier Lifetimes in a III-V-N Intermediate-Band Semiconductor},

  author       = {Heyman, J. N. and Schwartzberg, A. M. and Yu, K. M. and Luce, A. V. and Dubon, O. D. and Kuang, Y. J. and Tu, C. W. and Walukiewicz, W.},

  abstractNote = {Here we use transient absorption spectroscopy to measure carrier lifetimes in the multiband semiconductor GaPyAs1-x-yNx. These measurements probe the electron populations in the conduction band, intermediate band, and valence band as a function of time after an excitation pulse. Following photoexcitation of GaP0.32As0.67N0.01, we find that the electron population in the conduction band decays exponentially with a time constant τCB=23 ps. The electron population in the intermediate band exhibits bimolecular recombination with recombination constant r = 2×10-8 cm3/s. In our experiment, an optical pump pulse excites electrons from the valence band to the intermediate and conduction bands, and the change in interband absorption due to absorption saturation and induced absorption is probed with a delayed white-light pulse. We model the optical properties of our samples using the band anticrossing model to extract carrier densities as a function of time. Finally, these results not only identify the short minority-carrier lifetime as a key factor affecting the performance of GaPyAs1-x-yNx-based intermediate-band solar cells but also provide guidance on ways to address this issue.},

  doi          = {10.1103/PhysRevApplied.7.014016},

  journal      = {Physical Review Applied},

  number       = 1,

  volume       = 7,

  place        = {United States},

  year         = {Tue Jan 24 00:00:00 EST 2017},

  month        = {Tue Jan 24 00:00:00 EST 2017}

}

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Works referencing / citing this record:

Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, and localization of states
journal, November 2019

Polak, M. P.; Kudrawiec, R.; Rubel, O.
Journal of Applied Physics, Vol. 126, Issue 17
DOI: 10.1063/1.5097977

Carrier dynamics of intermediate sub-bandgap transitions in ZnTeO
journal, October 2019

Chen, Chihyu; Stoica, Vladimir A.; Schaller, Richard D.
Journal of Applied Physics, Vol. 126, Issue 13
DOI: 10.1063/1.5111927

THz transient photoconductivity of the III–V dilute nitride GaP _y As _{1− y − x} N _x
journal, October 2018

Heyman, J. N.; Weiss, E. M.; Rollag, J. R.
Semiconductor Science and Technology, Vol. 33, Issue 12
DOI: 10.1088/1361-6641/aae7c5

Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, localization of states
text, January 2019

Polak, Maciej P.; Kudrawiec, Robert; Rubel, Oleg
arXiv
DOI: 10.48550/arxiv.1904.00159

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Title: Carrier Lifetimes in a I I I - V - N Intermediate-Band Semiconductor

Abstract

Citation Formats

Band Anticrossing in GaInNAs Alloys journal, February 1999

Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x journal, April 2000

Carrier dynamics of the intermediate state in InAs/GaAs quantum dots coupled in a photonic cavity under two-photon excitation journal, July 2012

Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels journal, June 1997

The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells: Intersubband optical transitions of QD solar cells journal, March 2012

Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures book, January 1999

Intermediate band solar cells: Recent progress and future directions journal, June 2015

Temperature evolution of carrier dynamics in GaN x P y As 1−y−x alloys journal, May 2015

Photon-Radiative Recombination of Electrons and Holes in Germanium journal, June 1954

Effect of nitrogen on the electronic band structure of group III-N-V alloys journal, August 2000

Multiband GaNAsP quaternary alloys journal, February 2006

Engineering the Electronic Band Structure for Multiband Solar Cells journal, January 2011

Understanding intermediate-band solar cells journal, February 2012

Multicolor Electroluminescence from Intermediate Band Solar Cell Structures journal, December 2015

GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy journal, March 2013

Demonstration of ZnTe 1- x O x Intermediate Band Solar Cell journal, August 2011

Diluted II-VI Oxide Semiconductors with Multiple Band Gaps journal, December 2003

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Band anticrossing in GaP 1 − x N x alloys journal, May 2002

Band anticrossing in highly mismatched III V semiconductor alloys journal, July 2002

Intermediate-band dynamics of quantum dots solar cell in concentrator photovoltaic modules journal, April 2014

Electronic Band Structure of GaN x P y As 1 − x − y Highly Mismatched Alloys: Suitability for Intermediate-Band Solar Cells journal, April 2014

Properties of GaAs/InGaAs quantum well solar cells under low concentration operation journal, January 2000

Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs:C journal, August 2000

Photocurrent induced by two-photon excitation in ZnTeO intermediate band solar cells journal, February 2013

Energy band structure in p-type germanium and silicon journal, September 1956

Conduction-band-resonant nitrogen-induced levels in GaAs 1 − x N x with x < 0.03 journal, September 2001

Understanding the operation of quantum dot intermediate band solar cells journal, February 2012

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Title: Carrier Lifetimes in a $I I I - V - N$ Intermediate-Band Semiconductor

Band Anticrossing in GaInNAs Alloys
journal, February 1999

Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x
journal, April 2000

Carrier dynamics of the intermediate state in InAs/GaAs quantum dots coupled in a photonic cavity under two-photon excitation
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Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
journal, June 1997

The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells: Intersubband optical transitions of QD solar cells
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Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures
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Intermediate band solar cells: Recent progress and future directions
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Temperature evolution of carrier dynamics in GaN _x P _y As _1−y−x alloys
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Photon-Radiative Recombination of Electrons and Holes in Germanium
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Effect of nitrogen on the electronic band structure of group III-N-V alloys
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Multiband GaNAsP quaternary alloys
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Engineering the Electronic Band Structure for Multiband Solar Cells
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Understanding intermediate-band solar cells
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Multicolor Electroluminescence from Intermediate Band Solar Cell Structures
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