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Title: Carrier Lifetimes in a I I I - V - N Intermediate-Band Semiconductor

Here we use transient absorption spectroscopy to measure carrier lifetimes in the multiband semiconductor GaP yAs 1-x-yN x. These measurements probe the electron populations in the conduction band, intermediate band, and valence band as a function of time after an excitation pulse. Following photoexcitation of GaP 0.32As 0.67N 0.01, we find that the electron population in the conduction band decays exponentially with a time constant τ CB=23 ps. The electron population in the intermediate band exhibits bimolecular recombination with recombination constant r = 2×10 -8 cm 3/s. In our experiment, an optical pump pulse excites electrons from the valence band to the intermediate and conduction bands, and the change in interband absorption due to absorption saturation and induced absorption is probed with a delayed white-light pulse. We model the optical properties of our samples using the band anticrossing model to extract carrier densities as a function of time. Finally, these results not only identify the short minority-carrier lifetime as a key factor affecting the performance of GaP yAs 1-x-yN x-based intermediate-band solar cells but also provide guidance on ways to address this issue.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [4] ;  [5] ;  [5] ;  [2]
  1. Macalester College, St. Paul, MN (United States). Physics Dept.
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; City Univ. of Hong Kong (China)
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering
  5. Univ. of California, San Diego, CA (United States). Dept. of Physics
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 7; Journal Issue: 1; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society (APS)
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); Research Grants Council of Hong Kong
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
OSTI Identifier:
1393609
Alternate Identifier(s):
OSTI ID: 1341267

Heyman, J. N., Schwartzberg, A. M., Yu, K. M., Luce, A. V., Dubon, O. D., Kuang, Y. J., Tu, C. W., and Walukiewicz, W.. Carrier Lifetimes in a III-V-N Intermediate-Band Semiconductor. United States: N. p., Web. doi:10.1103/PhysRevApplied.7.014016.
Heyman, J. N., Schwartzberg, A. M., Yu, K. M., Luce, A. V., Dubon, O. D., Kuang, Y. J., Tu, C. W., & Walukiewicz, W.. Carrier Lifetimes in a III-V-N Intermediate-Band Semiconductor. United States. doi:10.1103/PhysRevApplied.7.014016.
Heyman, J. N., Schwartzberg, A. M., Yu, K. M., Luce, A. V., Dubon, O. D., Kuang, Y. J., Tu, C. W., and Walukiewicz, W.. 2017. "Carrier Lifetimes in a III-V-N Intermediate-Band Semiconductor". United States. doi:10.1103/PhysRevApplied.7.014016. https://www.osti.gov/servlets/purl/1393609.
@article{osti_1393609,
title = {Carrier Lifetimes in a III-V-N Intermediate-Band Semiconductor},
author = {Heyman, J. N. and Schwartzberg, A. M. and Yu, K. M. and Luce, A. V. and Dubon, O. D. and Kuang, Y. J. and Tu, C. W. and Walukiewicz, W.},
abstractNote = {Here we use transient absorption spectroscopy to measure carrier lifetimes in the multiband semiconductor GaPyAs1-x-yNx. These measurements probe the electron populations in the conduction band, intermediate band, and valence band as a function of time after an excitation pulse. Following photoexcitation of GaP0.32As0.67N0.01, we find that the electron population in the conduction band decays exponentially with a time constant τCB=23 ps. The electron population in the intermediate band exhibits bimolecular recombination with recombination constant r = 2×10-8 cm3/s. In our experiment, an optical pump pulse excites electrons from the valence band to the intermediate and conduction bands, and the change in interband absorption due to absorption saturation and induced absorption is probed with a delayed white-light pulse. We model the optical properties of our samples using the band anticrossing model to extract carrier densities as a function of time. Finally, these results not only identify the short minority-carrier lifetime as a key factor affecting the performance of GaPyAs1-x-yNx-based intermediate-band solar cells but also provide guidance on ways to address this issue.},
doi = {10.1103/PhysRevApplied.7.014016},
journal = {Physical Review Applied},
number = 1,
volume = 7,
place = {United States},
year = {2017},
month = {1}
}