skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Origin of colossal dielectric permittivity of rutile Ti 0.9In 0.05Nb 0.05O 2: single crystal and polycrystalline

Abstract

Here in this article, we investigated the dielectric properties of (In + Nb) co-doped rutile TiO 2 single crystal and polycrystalline ceramics. Both of them showed colossal, up to 10 4, dielectric permittivity at room temperature. The single crystal sample showed one dielectric relaxation process with a large dielectric loss. The voltage-dependence of dielectric permittivity and the impedance spectrum suggest that the high dielectric permittivity of single crystal originated from the surface barrier layer capacitor (SBLC). The impedance spectroscopy at different temperature confirmed that the (In+Nb) co-doped rutile TiO 2 polycrystalline ceramic had semiconductor grains and insulating grain boundaries, and that the activation energies were calculated to be 0.052 eV and 0.35 eV for grain and grain boundary, respectively. The dielectric behavior and impedance spectrum of the polycrystalline ceramic sample indicated that the internal barrier layer capacitor (IBLC) mode made a major contribution to the high ceramic dielectric permittivity, instead of the electron-pinned defect-dipoles.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2]
  1. Harbin Inst. of Technology (China). Dept. of Physics
  2. Univ. of Wyoming, Laramie, WY (United States). Dept. of Physics & Astronomy
Publication Date:
Research Org.:
Univ. of Wyoming, Laramie, WY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Natural Science Foundation of China (NNSFC)
OSTI Identifier:
1393428
Grant/Contract Number:  
FG02-10ER46728; SC0004981
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Song, Yongli, Wang, Xianjie, Sui, Yu, Liu, Ziyi, Zhang, Yu, Zhan, Hongsheng, Song, Bingqian, Liu, Zhiguo, Lv, Zhe, Tao, Lei, and Tang, Jinke. Origin of colossal dielectric permittivity of rutile Ti0.9In0.05Nb0.05O2: single crystal and polycrystalline. United States: N. p., 2016. Web. doi:10.1038/srep21478.
Song, Yongli, Wang, Xianjie, Sui, Yu, Liu, Ziyi, Zhang, Yu, Zhan, Hongsheng, Song, Bingqian, Liu, Zhiguo, Lv, Zhe, Tao, Lei, & Tang, Jinke. Origin of colossal dielectric permittivity of rutile Ti0.9In0.05Nb0.05O2: single crystal and polycrystalline. United States. doi:10.1038/srep21478.
Song, Yongli, Wang, Xianjie, Sui, Yu, Liu, Ziyi, Zhang, Yu, Zhan, Hongsheng, Song, Bingqian, Liu, Zhiguo, Lv, Zhe, Tao, Lei, and Tang, Jinke. Fri . "Origin of colossal dielectric permittivity of rutile Ti0.9In0.05Nb0.05O2: single crystal and polycrystalline". United States. doi:10.1038/srep21478. https://www.osti.gov/servlets/purl/1393428.
@article{osti_1393428,
title = {Origin of colossal dielectric permittivity of rutile Ti0.9In0.05Nb0.05O2: single crystal and polycrystalline},
author = {Song, Yongli and Wang, Xianjie and Sui, Yu and Liu, Ziyi and Zhang, Yu and Zhan, Hongsheng and Song, Bingqian and Liu, Zhiguo and Lv, Zhe and Tao, Lei and Tang, Jinke},
abstractNote = {Here in this article, we investigated the dielectric properties of (In + Nb) co-doped rutile TiO2 single crystal and polycrystalline ceramics. Both of them showed colossal, up to 104, dielectric permittivity at room temperature. The single crystal sample showed one dielectric relaxation process with a large dielectric loss. The voltage-dependence of dielectric permittivity and the impedance spectrum suggest that the high dielectric permittivity of single crystal originated from the surface barrier layer capacitor (SBLC). The impedance spectroscopy at different temperature confirmed that the (In+Nb) co-doped rutile TiO2 polycrystalline ceramic had semiconductor grains and insulating grain boundaries, and that the activation energies were calculated to be 0.052 eV and 0.35 eV for grain and grain boundary, respectively. The dielectric behavior and impedance spectrum of the polycrystalline ceramic sample indicated that the internal barrier layer capacitor (IBLC) mode made a major contribution to the high ceramic dielectric permittivity, instead of the electron-pinned defect-dipoles.},
doi = {10.1038/srep21478},
journal = {Scientific Reports},
number = 1,
volume = 6,
place = {United States},
year = {2016},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 41 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

d carrier induced intrinsic room temperature ferromagnetism in Nb:TiO 2 film
journal, May 2012

  • Yang, J. Y.; Han, Y. L.; He, L.
  • Applied Physics Letters, Vol. 100, Issue 20
  • DOI: 10.1063/1.4707378

Broadband dielectric spectroscopy on single-crystalline and ceramic CaCu3Ti4O12
journal, July 2007

  • Krohns, S.; Lunkenheimer, P.; Ebbinghaus, S. G.
  • Applied Physics Letters, Vol. 91, Issue 2
  • DOI: 10.1063/1.2757098

Photoemission and STM study of the electronic structure of Nb-doped TiO 2
journal, May 2000


Colossal dielectric constants in single-crystalline and ceramic CaCu3Ti4O12 investigated by broadband dielectric spectroscopy
journal, April 2008

  • Krohns, S.; Lunkenheimer, P.; Ebbinghaus, S. G.
  • Journal of Applied Physics, Vol. 103, Issue 8
  • DOI: 10.1063/1.2902374

Colossal Permittivity in Ultrafine Grain Size BaTiO3–x and Ba0.95La0.05TiO3–x Materials
journal, February 2008

  • Guillemet-Fritsch, S.; Valdez-Nava, Z.; Tenailleau, C.
  • Advanced Materials, Vol. 20, Issue 3
  • DOI: 10.1002/adma.200700245

CaCu3Ti4O12: One-step internal barrier layer capacitor
journal, March 2002

  • Sinclair, Derek C.; Adams, Timothy B.; Morrison, Finlay D.
  • Applied Physics Letters, Vol. 80, Issue 12, p. 2153-2155
  • DOI: 10.1063/1.1463211

Giant Dielectric Permittivity Observed in Li and Ti Doped NiO
journal, October 2002


XPS and FTIR Surface Characterization of TiO 2 Particles Used in Polymer Encapsulation
journal, May 2001

  • Erdem, Bedri; Hunsicker, Robert A.; Simmons, Gary W.
  • Langmuir, Vol. 17, Issue 9
  • DOI: 10.1021/la0015213

High dielectric constant and frozen macroscopic polarization in dense nanocrystalline Ba Ti O 3 ceramics
journal, February 2006

  • Buscaglia, Maria Teresa; Viviani, Massimo; Buscaglia, Vincenzo
  • Physical Review B, Vol. 73, Issue 6
  • DOI: 10.1103/PhysRevB.73.064114

Colossal Permittivity and Variable-Range-Hopping Conduction of Polarons in Ni 0.5 Zn 0.5 Fe 2 O 4 Ceramic
journal, June 2013

  • Zheng, Hui; Weng, Wenjian; Han, Gaorong
  • The Journal of Physical Chemistry C, Vol. 117, Issue 25
  • DOI: 10.1021/jp402320b

Optical Response of High-Dielectric-Constant Perovskite-Related Oxide
journal, July 2001


Electron-pinned defect-dipoles for high-performance colossal permittivity materials
journal, June 2013

  • Hu, Wanbiao; Liu, Yun; Withers, Ray L.
  • Nature Materials, Vol. 12, Issue 9
  • DOI: 10.1038/nmat3691