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Title: Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials

The development of responsive metamaterials has enabled the realization of compact tunable photonic devices capable of manipulating the amplitude, polarization, wave vector and frequency of light. Integration of semiconductors into the active regions of metallic resonators is a proven approach for creating nonlinear metamaterials through optoelectronic control of the semiconductor carrier density. Metal-free subwavelength resonant semiconductor structures offer an alternative approach to create dynamic metamaterials. We present InAs plasmonic disk arrays as a viable resonant metamaterial at terahertz frequencies. Importantly, InAs plasmonic disks exhibit a strong nonlinear response arising from electric field-induced intervalley scattering, resulting in a reduced carrier mobility thereby damping the plasmonic response. here, we demonstrate nonlinear perfect absorbers configured as either optical limiters or saturable absorbers, including flexible nonlinear absorbers achieved by transferring the disks to polyimide films. Nonlinear plasmonic metamaterials show potential for use in ultrafast terahertz (THz) optics and for passive protection of sensitive electromagnetic devices.
Authors:
ORCiD logo [1] ;  [2] ;  [3] ; ORCiD logo [4] ;  [1] ;  [1] ;  [4] ;  [1] ;  [2]
  1. Boston Univ., MA (United States). Lab. for Microsystems Technology, Dept. of Mechanical Engineering
  2. Boston Univ., MA (United States). Dept. of Physics; Univ. of California, San Diego, CA (United States). Dept. of Physics
  3. Boston Univ., MA (United States). Dept. of Physics; Brown Univ., Providence, RI (United States). School of Engineering
  4. Univ. of Texas, Austin, TX (United States). Microelectronics Research Center
Publication Date:
Grant/Contract Number:
FG02-09ER46643; SC0002384
Type:
Accepted Manuscript
Journal Name:
Light, Science & Applications
Additional Journal Information:
Journal Volume: 5; Journal Issue: 5; Journal ID: ISSN 2047-7538
Publisher:
Nature Publishing Group
Research Org:
Boston Univ., MA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; nonlinear absorbers; nonlinear metamaterials; plasmonic semiconductor metamaterials; terahertz metamaterials; transfer printing
OSTI Identifier:
1393404

Seren, Huseyin R., Zhang, Jingdi, Keiser, George R., Maddox, Scott J., Zhao, Xiaoguang, Fan, Kebin, Bank, Seth R., Zhang, Xin, and Averitt, Richard D.. Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials. United States: N. p., Web. doi:10.1038/lsa.2016.78.
Seren, Huseyin R., Zhang, Jingdi, Keiser, George R., Maddox, Scott J., Zhao, Xiaoguang, Fan, Kebin, Bank, Seth R., Zhang, Xin, & Averitt, Richard D.. Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials. United States. doi:10.1038/lsa.2016.78.
Seren, Huseyin R., Zhang, Jingdi, Keiser, George R., Maddox, Scott J., Zhao, Xiaoguang, Fan, Kebin, Bank, Seth R., Zhang, Xin, and Averitt, Richard D.. 2016. "Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials". United States. doi:10.1038/lsa.2016.78. https://www.osti.gov/servlets/purl/1393404.
@article{osti_1393404,
title = {Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials},
author = {Seren, Huseyin R. and Zhang, Jingdi and Keiser, George R. and Maddox, Scott J. and Zhao, Xiaoguang and Fan, Kebin and Bank, Seth R. and Zhang, Xin and Averitt, Richard D.},
abstractNote = {The development of responsive metamaterials has enabled the realization of compact tunable photonic devices capable of manipulating the amplitude, polarization, wave vector and frequency of light. Integration of semiconductors into the active regions of metallic resonators is a proven approach for creating nonlinear metamaterials through optoelectronic control of the semiconductor carrier density. Metal-free subwavelength resonant semiconductor structures offer an alternative approach to create dynamic metamaterials. We present InAs plasmonic disk arrays as a viable resonant metamaterial at terahertz frequencies. Importantly, InAs plasmonic disks exhibit a strong nonlinear response arising from electric field-induced intervalley scattering, resulting in a reduced carrier mobility thereby damping the plasmonic response. here, we demonstrate nonlinear perfect absorbers configured as either optical limiters or saturable absorbers, including flexible nonlinear absorbers achieved by transferring the disks to polyimide films. Nonlinear plasmonic metamaterials show potential for use in ultrafast terahertz (THz) optics and for passive protection of sensitive electromagnetic devices.},
doi = {10.1038/lsa.2016.78},
journal = {Light, Science & Applications},
number = 5,
volume = 5,
place = {United States},
year = {2016},
month = {1}
}

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Negative refraction in semiconductor metamaterials
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