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Title: Low-Temperature Surface Preparation and Epitaxial Growth of ZnS and Cu 2ZnSnS 4 on ZnS(110) and GaP(100)

Here we give a summary of the low-temperature preparation methods of ZnS(110) and GaP(100) crystals for epitaxial growth of ZnS and Cu 2ZnSnS 4 (CZTS) via molecular beam epitaxy. Substrates were prepared for epitaxial growth by means of room-temperature aqueous surface treatments and subsequent ultra-high vacuum transfer to the deposition system. Epitaxial growth of ZnS was successful at 500 K on both ZnS(110) and GaP(100) as only single domains were observed with electron backscatter diffraction; furthermore, transmission electron microscopy measurements confirmed an epitaxial interface. Epitaxial growth of CZTS was successful on ZnS at 700 K. However, epitaxial growth was not possible on GaP at 700 K due to Ga xS y formation, which significantly degraded the quality of the GaP crystal surface. Although CZTS was grown epitaxially on ZnS, growth of multiple crystallographic domains remains a problem that could inherently limit the viability of epitaxial CZTS for model system studies.
 [1] ;  [2] ;  [1] ; ORCiD logo [1] ;  [1]
  1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
  2. Univ. of Florida, Gainesville, FL (United States). Dept. of Chemical Engineering
Publication Date:
Report Number(s):
Journal ID: ISSN 0022-0248
Grant/Contract Number:
AC36-08GO28308; CHE-1230929
Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 478; Journal ID: ISSN 0022-0248
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S); National Science Foundation (NSF)
Country of Publication:
United States
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; sulfides; molecular beam epitaxy; zinc compounds; solar cells; semiconducting quaternary alloys
OSTI Identifier: