Low-Temperature Surface Preparation and Epitaxial Growth of ZnS and Cu₂ZnSnS₄ on ZnS(110) and GaP(100)

Journal Article · 11 August 2017 · Journal of Crystal Growth

DOI: https://doi.org/10.1016/j.jcrysgro.2017.08.018 · OSTI ID:1393378

Harvey, Steven P ^[1]; Wilson, Samual ^[2]; Moutinho, Helio R ^[1]; Norman, Andrew  ^[1]; Teeter, Glenn R ^[1]

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1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
2. Univ. of Florida, Gainesville, FL (United States). Dept. of Chemical Engineering

Here we give a summary of the low-temperature preparation methods of ZnS(110) and GaP(100) crystals for epitaxial growth of ZnS and Cu₂ZnSnS₄ (CZTS) via molecular beam epitaxy. Substrates were prepared for epitaxial growth by means of room-temperature aqueous surface treatments and subsequent ultra-high vacuum transfer to the deposition system. Epitaxial growth of ZnS was successful at 500 K on both ZnS(110) and GaP(100) as only single domains were observed with electron backscatter diffraction; furthermore, transmission electron microscopy measurements confirmed an epitaxial interface. Epitaxial growth of CZTS was successful on ZnS at 700 K. However, epitaxial growth was not possible on GaP at 700 K due to Ga_xS_y formation, which significantly degraded the quality of the GaP crystal surface. Although CZTS was grown epitaxially on ZnS, growth of multiple crystallographic domains remains a problem that could inherently limit the viability of epitaxial CZTS for model system studies.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S); National Science Foundation (NSF)
• Grant/Contract Number: AC36-08GO28308
• OSTI ID: 1393378
• Alternate ID(s): OSTI ID: 1549861
• Report Number(s): NREL/JA--5K00-68184
• Journal Information: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 478; ISSN 0022-0248
• Publisher: ElsevierCopyright Statement
• Country of Publication: United States
• Language: English