Low-Temperature Surface Preparation and Epitaxial Growth of ZnS and Cu 2ZnSnS 4 on ZnS(110) and GaP(100)
Here we give a summary of the low-temperature preparation methods of ZnS(110) and GaP(100) crystals for epitaxial growth of ZnS and Cu 2ZnSnS 4 (CZTS) via molecular beam epitaxy. Substrates were prepared for epitaxial growth by means of room-temperature aqueous surface treatments and subsequent ultra-high vacuum transfer to the deposition system. Epitaxial growth of ZnS was successful at 500 K on both ZnS(110) and GaP(100) as only single domains were observed with electron backscatter diffraction; furthermore, transmission electron microscopy measurements confirmed an epitaxial interface. Epitaxial growth of CZTS was successful on ZnS at 700 K. However, epitaxial growth was not possible on GaP at 700 K due to Ga xS y formation, which significantly degraded the quality of the GaP crystal surface. Although CZTS was grown epitaxially on ZnS, growth of multiple crystallographic domains remains a problem that could inherently limit the viability of epitaxial CZTS for model system studies.
- Authors:
-
[1]
; [2]
; [1]
;
[1]
; [1]
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Univ. of Florida, Gainesville, FL (United States). Dept. of Chemical Engineering
- Publication Date:
- Report Number(s):
- NREL/JA-5K00-68184
Journal ID: ISSN 0022-0248
- Grant/Contract Number:
- AC36-08GO28308; CHE-1230929
- Type:
- Accepted Manuscript
- Journal Name:
- Journal of Crystal Growth
- Additional Journal Information:
- Journal Volume: 478; Journal ID: ISSN 0022-0248
- Publisher:
- Elsevier
- Research Org:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S); National Science Foundation (NSF)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; sulfides; molecular beam epitaxy; zinc compounds; solar cells; semiconducting quaternary alloys
- OSTI Identifier:
- 1393378
Harvey, Steven P, Wilson, Samual, Moutinho, Helio R, Norman, Andrew, and Teeter, Glenn R. Low-Temperature Surface Preparation and Epitaxial Growth of ZnS and Cu2ZnSnS4 on ZnS(110) and GaP(100). United States: N. p.,
Web. doi:10.1016/j.jcrysgro.2017.08.018.
Harvey, Steven P, Wilson, Samual, Moutinho, Helio R, Norman, Andrew, & Teeter, Glenn R. Low-Temperature Surface Preparation and Epitaxial Growth of ZnS and Cu2ZnSnS4 on ZnS(110) and GaP(100). United States. doi:10.1016/j.jcrysgro.2017.08.018.
Harvey, Steven P, Wilson, Samual, Moutinho, Helio R, Norman, Andrew, and Teeter, Glenn R. 2017.
"Low-Temperature Surface Preparation and Epitaxial Growth of ZnS and Cu2ZnSnS4 on ZnS(110) and GaP(100)". United States.
doi:10.1016/j.jcrysgro.2017.08.018. https://www.osti.gov/servlets/purl/1393378.
@article{osti_1393378,
title = {Low-Temperature Surface Preparation and Epitaxial Growth of ZnS and Cu2ZnSnS4 on ZnS(110) and GaP(100)},
author = {Harvey, Steven P and Wilson, Samual and Moutinho, Helio R and Norman, Andrew and Teeter, Glenn R},
abstractNote = {Here we give a summary of the low-temperature preparation methods of ZnS(110) and GaP(100) crystals for epitaxial growth of ZnS and Cu2ZnSnS4 (CZTS) via molecular beam epitaxy. Substrates were prepared for epitaxial growth by means of room-temperature aqueous surface treatments and subsequent ultra-high vacuum transfer to the deposition system. Epitaxial growth of ZnS was successful at 500 K on both ZnS(110) and GaP(100) as only single domains were observed with electron backscatter diffraction; furthermore, transmission electron microscopy measurements confirmed an epitaxial interface. Epitaxial growth of CZTS was successful on ZnS at 700 K. However, epitaxial growth was not possible on GaP at 700 K due to GaxSy formation, which significantly degraded the quality of the GaP crystal surface. Although CZTS was grown epitaxially on ZnS, growth of multiple crystallographic domains remains a problem that could inherently limit the viability of epitaxial CZTS for model system studies.},
doi = {10.1016/j.jcrysgro.2017.08.018},
journal = {Journal of Crystal Growth},
number = ,
volume = 478,
place = {United States},
year = {2017},
month = {8}
}
- Free Publicly Accessible Full Text
-
Accepted Manuscript (DOE)
- Publisher's Version of Record
- https://doi.org/10.1016/j.jcrysgro.2017.08.018