Low-Temperature Surface Preparation and Epitaxial Growth of ZnS and Cu2ZnSnS4 on ZnS(110) and GaP(100)
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Univ. of Florida, Gainesville, FL (United States). Dept. of Chemical Engineering
Here we give a summary of the low-temperature preparation methods of ZnS(110) and GaP(100) crystals for epitaxial growth of ZnS and Cu2ZnSnS4 (CZTS) via molecular beam epitaxy. Substrates were prepared for epitaxial growth by means of room-temperature aqueous surface treatments and subsequent ultra-high vacuum transfer to the deposition system. Epitaxial growth of ZnS was successful at 500 K on both ZnS(110) and GaP(100) as only single domains were observed with electron backscatter diffraction; furthermore, transmission electron microscopy measurements confirmed an epitaxial interface. Epitaxial growth of CZTS was successful on ZnS at 700 K. However, epitaxial growth was not possible on GaP at 700 K due to GaxSy formation, which significantly degraded the quality of the GaP crystal surface. Although CZTS was grown epitaxially on ZnS, growth of multiple crystallographic domains remains a problem that could inherently limit the viability of epitaxial CZTS for model system studies.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S); National Science Foundation (NSF)
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1393378
- Alternate ID(s):
- OSTI ID: 1549861
- Report Number(s):
- NREL/JA--5K00-68184
- Journal Information:
- Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 478; ISSN 0022-0248
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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