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This content will become publicly available on May 30, 2018

Title: Enhanced Sb 2Se 3 solar cell performance through theory-guided defect control: Enhanced Sb 2Se 3 solar cell performance

Defects present in the absorber layer largely dictate photovoltaic device performance. Recently, a binary photovoltaic material, Sb 2Se 3, has drawn much attention due to its low-cost and nontoxic constituents and rapid performance promotion. So far, however, the intrinsic defects of Sb 2Se 3 remain elusive. Here in this work, through a combined theoretical and experimental investigation, we revealed that shallow acceptors, SeSb antisites, are the dominant defects in Sb 2Se 3 produced in an Se-rich environment, where deep donors, SbSe and VSe, dominate in Sb 2Se 3 produced in an Se-poor environment. We further constructed a superstrate CdS/Sb 2Se 3 thin-film solar cell achieving 5.76% efficiency through in situ Se compensation during Sb 2Se 3 evaporation and through careful optimization of absorber layer thickness. In conclusion, the understanding of intrinsic defects in Sb 2Se 3 film and the demonstrated success of in situ Se compensation strategy pave the way for further efficiency improvement of this very promising photovoltaic technology.
Authors:
 [1] ;  [2] ;  [3] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ; ORCiD logo [3] ;  [4] ; ORCiD logo [5] ; ORCiD logo [2]
  1. Huazhong University of Science and Technology, Wuhan (China). Wuhan National Laboratory for Optoelectronics (WNLO); Henan University, Kaifeng (China). Key Laboratory for Special Functional Materials of Ministry of Education, Collaborative Innovation Center of Nano Functional Materials and Applications, Henan Province
  2. Huazhong University of Science and Technology, Wuhan (China). Wuhan National Laboratory for Optoelectronics (WNLO)
  3. National Renewable Energy Lab. (NREL), Golden, CO (United States). Chemistry and Nanoscience Center
  4. Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun (China)
  5. East China Normal University, Shanghai (China). Key Laboratory of Polar Materials and Devices (MOE)
Publication Date:
Report Number(s):
NREL/JA-5900-68725
Journal ID: ISSN 1062-7995
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
Progress in Photovoltaics
Additional Journal Information:
Journal Volume: 25; Journal Issue: 10; Journal ID: ISSN 1062-7995
Publisher:
Wiley
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; Sb2Se3; thermal evaporation; defects; solar cell; in situ Se compensation
OSTI Identifier:
1393372