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Title: Enhanced Sb2Se3 solar cell performance through theory-guided defect control: Enhanced Sb2Se3 solar cell performance

Abstract

Defects present in the absorber layer largely dictate photovoltaic device performance. Recently, a binary photovoltaic material, Sb2Se3, has drawn much attention due to its low-cost and nontoxic constituents and rapid performance promotion. So far, however, the intrinsic defects of Sb2Se3 remain elusive. Here in this work, through a combined theoretical and experimental investigation, we revealed that shallow acceptors, SeSb antisites, are the dominant defects in Sb2Se3 produced in an Se-rich environment, where deep donors, SbSe and VSe, dominate in Sb2Se3 produced in an Se-poor environment. We further constructed a superstrate CdS/Sb2Se3 thin-film solar cell achieving 5.76% efficiency through in situ Se compensation during Sb2Se3 evaporation and through careful optimization of absorber layer thickness. In conclusion, the understanding of intrinsic defects in Sb2Se3 film and the demonstrated success of in situ Se compensation strategy pave the way for further efficiency improvement of this very promising photovoltaic technology.

Authors:
 [1];  [2];  [3];  [2];  [2];  [2];  [2];  [2];  [2]; ORCiD logo [3];  [4]; ORCiD logo [5]; ORCiD logo [2]
  1. Huazhong University of Science and Technology, Wuhan (China). Wuhan National Laboratory for Optoelectronics (WNLO); Henan University, Kaifeng (China). Key Laboratory for Special Functional Materials of Ministry of Education, Collaborative Innovation Center of Nano Functional Materials and Applications, Henan Province
  2. Huazhong University of Science and Technology, Wuhan (China). Wuhan National Laboratory for Optoelectronics (WNLO)
  3. National Renewable Energy Lab. (NREL), Golden, CO (United States). Chemistry and Nanoscience Center
  4. Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun (China)
  5. East China Normal University, Shanghai (China). Key Laboratory of Polar Materials and Devices (MOE)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1393372
Report Number(s):
NREL/JA-5900-68725
Journal ID: ISSN 1062-7995
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Progress in Photovoltaics
Additional Journal Information:
Journal Volume: 25; Journal Issue: 10; Journal ID: ISSN 1062-7995
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; Sb2Se3; thermal evaporation; defects; solar cell; in situ Se compensation

Citation Formats

Liu, Xinsheng, Xiao, Xun, Yang, Ye, Xue, Ding-Jiang, Li, Deng-Bing, Chen, Chao, Lu, Shuaicheng, Gao, Liang, He, Yisu, Beard, Matthew C., Wang, Gang, Chen, Shiyou, and Tang, Jiang. Enhanced Sb2Se3 solar cell performance through theory-guided defect control: Enhanced Sb2Se3 solar cell performance. United States: N. p., 2017. Web. doi:10.1002/pip.2900.
Liu, Xinsheng, Xiao, Xun, Yang, Ye, Xue, Ding-Jiang, Li, Deng-Bing, Chen, Chao, Lu, Shuaicheng, Gao, Liang, He, Yisu, Beard, Matthew C., Wang, Gang, Chen, Shiyou, & Tang, Jiang. Enhanced Sb2Se3 solar cell performance through theory-guided defect control: Enhanced Sb2Se3 solar cell performance. United States. doi:10.1002/pip.2900.
Liu, Xinsheng, Xiao, Xun, Yang, Ye, Xue, Ding-Jiang, Li, Deng-Bing, Chen, Chao, Lu, Shuaicheng, Gao, Liang, He, Yisu, Beard, Matthew C., Wang, Gang, Chen, Shiyou, and Tang, Jiang. Tue . "Enhanced Sb2Se3 solar cell performance through theory-guided defect control: Enhanced Sb2Se3 solar cell performance". United States. doi:10.1002/pip.2900. https://www.osti.gov/servlets/purl/1393372.
@article{osti_1393372,
title = {Enhanced Sb2Se3 solar cell performance through theory-guided defect control: Enhanced Sb2Se3 solar cell performance},
author = {Liu, Xinsheng and Xiao, Xun and Yang, Ye and Xue, Ding-Jiang and Li, Deng-Bing and Chen, Chao and Lu, Shuaicheng and Gao, Liang and He, Yisu and Beard, Matthew C. and Wang, Gang and Chen, Shiyou and Tang, Jiang},
abstractNote = {Defects present in the absorber layer largely dictate photovoltaic device performance. Recently, a binary photovoltaic material, Sb2Se3, has drawn much attention due to its low-cost and nontoxic constituents and rapid performance promotion. So far, however, the intrinsic defects of Sb2Se3 remain elusive. Here in this work, through a combined theoretical and experimental investigation, we revealed that shallow acceptors, SeSb antisites, are the dominant defects in Sb2Se3 produced in an Se-rich environment, where deep donors, SbSe and VSe, dominate in Sb2Se3 produced in an Se-poor environment. We further constructed a superstrate CdS/Sb2Se3 thin-film solar cell achieving 5.76% efficiency through in situ Se compensation during Sb2Se3 evaporation and through careful optimization of absorber layer thickness. In conclusion, the understanding of intrinsic defects in Sb2Se3 film and the demonstrated success of in situ Se compensation strategy pave the way for further efficiency improvement of this very promising photovoltaic technology.},
doi = {10.1002/pip.2900},
journal = {Progress in Photovoltaics},
number = 10,
volume = 25,
place = {United States},
year = {2017},
month = {5}
}

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