Controlling Dielectric and Relaxor-Ferroelectric Properties for Energy Storage by Tuning Pb0.92La0.08Zr0.52Ti0.48O3 Film Thickness

Brown, Emery; Ma, Chunrui; Acharya, Jagaran; Ma, Beihai; Wu, Judy; Li, Jun

doi:10.1021/am506247w

Title: Controlling Dielectric and Relaxor-Ferroelectric Properties for Energy Storage by Tuning Pb_0.92La_0.08Zr_0.52Ti_0.48O₃ Film Thickness

Abstract

The energy storage properties of Pb_0.92La_0.08Zr_0.52Ti_0.48O₃ (PLZT) films grown via pulsed laser deposition were evaluated at variable film thickness of 125, 250, 500, and 1000 nm. These films show high dielectric permittivity up to ~1200. Cyclic I–V measurements were used to evaluate the dielectric properties of these thin films, which not only provide the total electric displacement, but also separate contributions from each of the relevant components including electric conductivity (D1), dielectric capacitance (D2), and relaxor-ferroelectric domain switching polarization (P). Our results show that, as the film thickness increases, the material transits from a linear dielectric to nonlinear relaxor-ferroelectric. And while the energy storage per volume increases with the film thickness, the energy storage efficiency drops from ~80% to ~30%. The PLZT films can be optimized for different energy storage applications by tuning the film thickness to optimize between the linear and nonlinear dielectric properties and energy storage efficiency.

Authors:

Brown, Emery ^[1]; Ma, Chunrui ^[2]; Acharya, Jagaran ^[2]; Ma, Beihai ^[3]; Wu, Judy ^[2]; Li, Jun ^[1]

Kansas State Univ., Manhattan, KS (United States). Dept. of Chemistry
Univ. of Kansas, Lawrence, KS (United States). Dept. of Physics and Astronomy
Argonne National Lab. (ANL), Argonne, IL (United States). Energy Systems Division

Publication Date:: Wed Dec 24 00:00:00 EST 2014

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: National Aeronautics and Space Administration (NASA)

OSTI Identifier:: 1392947

Grant/Contract Number:: AC02-06CH11357

Resource Type:: Accepted Manuscript

Journal Name:: ACS Applied Materials and Interfaces

Additional Journal Information:: Journal Volume: 6; Journal Issue: 24; Journal ID: ISSN 1944-8244

Publisher:: American Chemical Society (ACS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; energy storage; PLZT film; relaxor ferroelectrics; solid-state dielectric capacitors

Citation Formats


                    Brown, Emery, Ma, Chunrui, Acharya, Jagaran, Ma, Beihai, Wu, Judy, and Li, Jun. Controlling Dielectric and Relaxor-Ferroelectric Properties for Energy Storage by Tuning Pb0.92La0.08Zr0.52Ti0.48O3 Film Thickness.  United States: N. p., 2014. 
Web.  doi:10.1021/am506247w.

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                    Brown, Emery, Ma, Chunrui, Acharya, Jagaran, Ma, Beihai, Wu, Judy, & Li, Jun. Controlling Dielectric and Relaxor-Ferroelectric Properties for Energy Storage by Tuning Pb0.92La0.08Zr0.52Ti0.48O3 Film Thickness.  United States.  https://doi.org/10.1021/am506247w

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                    Brown, Emery, Ma, Chunrui, Acharya, Jagaran, Ma, Beihai, Wu, Judy, and Li, Jun. Wed .  
"Controlling Dielectric and Relaxor-Ferroelectric Properties for Energy Storage by Tuning Pb0.92La0.08Zr0.52Ti0.48O3 Film Thickness".  United States.  https://doi.org/10.1021/am506247w.  https://www.osti.gov/servlets/purl/1392947.

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@article{osti_1392947,

  title        = {Controlling Dielectric and Relaxor-Ferroelectric Properties for Energy Storage by Tuning Pb0.92La0.08Zr0.52Ti0.48O3 Film Thickness},

  author       = {Brown, Emery and Ma, Chunrui and Acharya, Jagaran and Ma, Beihai and Wu, Judy and Li, Jun},

  abstractNote = {The energy storage properties of Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films grown via pulsed laser deposition were evaluated at variable film thickness of 125, 250, 500, and 1000 nm. These films show high dielectric permittivity up to ~1200. Cyclic I–V measurements were used to evaluate the dielectric properties of these thin films, which not only provide the total electric displacement, but also separate contributions from each of the relevant components including electric conductivity (D1), dielectric capacitance (D2), and relaxor-ferroelectric domain switching polarization (P). Our results show that, as the film thickness increases, the material transits from a linear dielectric to nonlinear relaxor-ferroelectric. And while the energy storage per volume increases with the film thickness, the energy storage efficiency drops from ~80% to ~30%. The PLZT films can be optimized for different energy storage applications by tuning the film thickness to optimize between the linear and nonlinear dielectric properties and energy storage efficiency.},

  doi          = {10.1021/am506247w},

  journal      = {ACS Applied Materials and Interfaces},

  number       = 24,

  volume       = 6,

  place        = {United States},

  year         = {Wed Dec 24 00:00:00 EST 2014},

  month        = {Wed Dec 24 00:00:00 EST 2014}

}

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Works referenced in this record:

Nonlinear dielectric thin films for high-power electric storage with energy density comparable with electrochemical supercapacitors
journal, September 2011

Kui Yao, ; Rahimabady, M.
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, Vol. 58, Issue 9
DOI: 10.1109/TUFFC.2011.2039

High-Energy Density Capacitors Utilizing 0.7 BaTiO ₃ -0.3 BiScO ₃ Ceramics
journal, August 2009

Ogihara, Hideki; Randall, Clive A.; Trolier-McKinstry, Susan
Journal of the American Ceramic Society, Vol. 92, Issue 8
DOI: 10.1111/j.1551-2916.2009.03104.x

Lead Lanthanum Zirconate Titanate Ceramic Thin Films for Energy Storage
journal, February 2013

Tong, Sheng; Ma, Beihai; Narayanan, Manoj
ACS Applied Materials & Interfaces, Vol. 5, Issue 4
DOI: 10.1021/am302985u

Novel Ferroelectric Polymer Composites with High Dielectric Constants
journal, October 2003

Dang, Z. -M.; Lin, Y. -H.; Nan, C. -W.
Advanced Materials, Vol. 15, Issue 19
DOI: 10.1002/adma.200304911

Why ferroelectric polyvinylidene fluoride is special
journal, August 2010

Poulsen, Matthew; Ducharme, Stephen
IEEE Transactions on Dielectrics and Electrical Insulation, Vol. 17, Issue 4
DOI: 10.1109/TDEI.2010.5539671

Novel Ferroelectric Polymers for High Energy Density and Low Loss Dielectrics
journal, February 2012

Zhu, Lei; Wang, Qing
Macromolecules, Vol. 45, Issue 7
DOI: 10.1021/ma2024057

Thickness-Dependent Dielectric, Ferroelectric, and Magnetodielectric Properties of BiFeO3 Thin Films Derived by Chemical Solution Deposition
journal, November 2011

Tang, Xianwu; Dai, Jianming; Zhu, Xuebin
Journal of the American Ceramic Society, Vol. 95, Issue 2
DOI: 10.1111/j.1551-2916.2011.04920.x

A review on the dielectric materials for high energy-storage application
journal, January 2013

Hao, Xihong
Journal of Advanced Dielectrics, Vol. 03, Issue 01
DOI: 10.1142/S2010135X13300016

High energy-storage performance in Pb _0.91 La _0.09 (Ti _0.65 Zr _0.35 )O ₃ relaxor ferroelectric thin films
journal, December 2012

Hao, Xihong; Wang, Ying; Yang, Jichun
Journal of Applied Physics, Vol. 112, Issue 11
DOI: 10.1063/1.4768461

Novel ferroelectric capacitor for non-volatile memory storage and biomedical tactile sensor applications
journal, October 2010

Liu, Shi Yang; Chua, Lynn; Tan, Kian Chuan
Thin Solid Films, Vol. 518, Issue 24
DOI: 10.1016/j.tsf.2010.03.108

Low-temperature growth of ferroelectric lead zirconate titanate thin films using the magnetic field of low power 2.45GHz microwave irradiation
journal, June 2008

Wang, Z. J.; Cao, Z. P.; Otsuka, Y.
Applied Physics Letters, Vol. 92, Issue 22
DOI: 10.1063/1.2938876

Piezoelectric materials for high frequency medical imaging applications: A review
journal, February 2007

Shung, K. K.; Cannata, J. M.; Zhou, Q. F.
Journal of Electroceramics, Vol. 19, Issue 1
DOI: 10.1007/s10832-007-9044-3

Pulsed laser deposition of perovskite relaxor ferroelectric thin films
journal, April 2006

Scarisoreanu, N.; Dinescu, M.; Craciun, F.
Applied Surface Science, Vol. 252, Issue 13
DOI: 10.1016/j.apsusc.2005.07.140

Relaxor behavior of pulsed laser deposited ferroelectric (Pb1−xLax)(Zr0.65Ti0.35)O3 films
journal, December 1998

Tyunina, M.; Levoska, J.; Sternberg, A.
Journal of Applied Physics, Vol. 84, Issue 12
DOI: 10.1063/1.369012

Enhanced dielectric nonlinearity in epitaxial Pb _0.92 La _0.08 Zr _0.52 Ti _0.48 O ₃ thin films
journal, April 2014

Ma, Chunrui; Ma, Beihai; Mi, Shao-Bo
Applied Physics Letters, Vol. 104, Issue 16
DOI: 10.1063/1.4872375

Dynamic leakage current compensation in ferroelectric thin-film capacitor structures
journal, April 2005

Meyer, René; Waser, Rainer; Prume, Klaus
Applied Physics Letters, Vol. 86, Issue 14
DOI: 10.1063/1.1897425

The Contribution of Electrical Conductivity, Dielectric Permittivity and Domain Switching in Ferroelectric Hysteresis Loops
journal, January 2011

Yan, Haixue; Inam, Fawad; Viola, Giuseppe
Journal of Advanced Dielectrics, Vol. 01, Issue 01
DOI: 10.1142/S2010135X11000148

Distinctive contributions to dielectric response of relaxor ferroelectric lead scandium niobate ceramic system: Dielectric properties of PSN ceramics
journal, August 2013

Bobnar, Vid; Uršič, Hana; Casar, Goran
physica status solidi (b), Vol. 250, Issue 10
DOI: 10.1002/pssb.201349259

Voltage offsets in (Pb,La)(Zr,Ti)O ₃ thin films
journal, January 1995

Pike, G. E.; Warren, W. L.; Dimos, D.
Applied Physics Letters, Vol. 66, Issue 4
DOI: 10.1063/1.114064

Effects of strain gradient on charge offsets and pyroelectric properties of ferroelectric thin films
journal, August 2006

Zheng, Yue; Wang, Biao; Woo, C. H.
Applied Physics Letters, Vol. 89, Issue 6
DOI: 10.1063/1.2335369

Works referencing / citing this record:

Ferroelectric ordering and energy storage density of thin films capacitor by doping La ^{3 +} and Sc ^{3 +} on Pb(Zr _0.53 Ti _0.47 )O ₃ using pulse laser deposition technique
journal, June 2019

Bhattarai, Mohan K.; Mishra, Karuna K.; Dugu, Sita
Applied Physics Letters, Vol. 114, Issue 22
DOI: 10.1063/1.5089224

Flexible ultrahigh energy storage density in lead-free heterostructure thin-film capacitors
journal, December 2019

Yang, B. B.; Guo, M. Y.; Li, C. H.
Applied Physics Letters, Vol. 115, Issue 24
DOI: 10.1063/1.5128834

Stable energy density of a PMN–PST ceramic from room temperature to its Curie point based on the synergistic effect of diversified energy
journal, January 2019

Li, Yong; Sun, Ningning; Du, Jinhua
Journal of Materials Chemistry C, Vol. 7, Issue 25
DOI: 10.1039/c9tc02172h

BiFeO ₃ –SrTiO ₃ thin film as a new lead-free relaxor-ferroelectric capacitor with ultrahigh energy storage performance
journal, January 2017

Pan, Hao; Zeng, Yi; Shen, Yang
Journal of Materials Chemistry A, Vol. 5, Issue 12
DOI: 10.1039/c7ta00665a

High-performance BaZr _0.35 Ti _0.65 O ₃ thin film capacitors with ultrahigh energy storage density and excellent thermal stability
journal, January 2018

Liang, Zhongshuai; Liu, Ming; Ma, Chunrui
Journal of Materials Chemistry A, Vol. 6, Issue 26
DOI: 10.1039/c7ta11109f

High-Performance Dielectric Ceramic Films for Energy Storage Capacitors: Progress and Outlook
journal, August 2018

Palneedi, Haribabu; Peddigari, Mahesh; Hwang, Geon-Tae
Advanced Functional Materials, Vol. 28, Issue 42
DOI: 10.1002/adfm.201803665

Giant energy-storage density and high efficiency achieved in (Bi _0.5 Na _0.5 )TiO ₃ –Bi(Ni _0.5 Zr _0.5 )O ₃ thick films with polar nanoregions
journal, January 2018

Sun, Ningning; Li, Yong; Zhang, Qiwei
Journal of Materials Chemistry C, Vol. 6, Issue 40
DOI: 10.1039/c8tc03481h

Interface thickness optimization of lead-free oxide multilayer capacitors for high-performance energy storage
journal, January 2018

Sun, Zixiong; Wang, Linxi; Liu, Ming
Journal of Materials Chemistry A, Vol. 6, Issue 4
DOI: 10.1039/c7ta10271b

Integrated Sensors in Advanced Composites: A Critical Review
journal, June 2019

Montazerian, Hossein; Rashidi, Armin; Milani, Abbas S.
Critical Reviews in Solid State and Materials Sciences, Vol. 45, Issue 3
DOI: 10.1080/10408436.2019.1588705

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Title: Controlling Dielectric and Relaxor-Ferroelectric Properties for Energy Storage by Tuning Pb0.92La0.08Zr0.52Ti0.48O3 Film Thickness

Abstract

Citation Formats

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