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Title: Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition

ZnO radial p–n junction architecture has the potential for forward-leap of light-emitting diode (LED) technology in terms of higher efficacy and economical production. Here, we report on ZnO radial p–n junction-based light emitting diodes prepared by full metalorganic chemical vapour deposition (MOCVD) with hydrogen-assisted p-type doping approach. The p-type ZnO(P) thin films were prepared by MOCVD with the precursors of dimethylzinc, tert-butanol, and tertiarybutylphosphine. Controlling the precursor flow for dopant results in the systematic change of doping concentration, Hall mobility, and electrical conductivity. Moreover, the approach of hydrogen-assisted phosphorous doping in ZnO expands the understanding of doping behaviour in ZnO. Ultraviolet and visible electroluminescence of ZnO radial p–n junction was demonstrated through a combination of position-controlled nano/microwire and crystalline p-type ZnO(P) radial shell growth on the wires. Lastly, the reported research opens a pathway of realisation of production-compatible ZnO p–n junction LEDs.
Authors:
ORCiD logo [1] ; ORCiD logo [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [3]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  2. Univ. of California, Los Angeles, CA (United States). Dept. of Materials Science and Engineering
  3. Seoul National Univ. (Korea, Republic of). Dept. of Physics and Astronomy
  4. Sejong Univ., Seoul (Korea, Republic of). Dept. of Nanotechnology and Advanced Materials Engineering
  5. Korea Univ., Seoul (Korea, Republic of). KU-KIST Graduate School of Converging Science and Technology
Publication Date:
Report Number(s):
LA-UR-17-21277
Journal ID: ISSN 0957-4484
Grant/Contract Number:
AC52-06NA25396; AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Nanotechnology
Additional Journal Information:
Journal Volume: 28; Journal Issue: 39; Journal ID: ISSN 0957-4484
Publisher:
IOP Publishing
Research Org:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Material Science
OSTI Identifier:
1392807

Yoo, Jinkyoung, Ahmed, Towfiq, Tang, Wei, Kim, Yong-Jin, Hong, Young Joon, Lee, Chul-Ho, and Yi, Gyu-Chul. Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition. United States: N. p., Web. doi:10.1088/1361-6528/aa7ec5.
Yoo, Jinkyoung, Ahmed, Towfiq, Tang, Wei, Kim, Yong-Jin, Hong, Young Joon, Lee, Chul-Ho, & Yi, Gyu-Chul. Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition. United States. doi:10.1088/1361-6528/aa7ec5.
Yoo, Jinkyoung, Ahmed, Towfiq, Tang, Wei, Kim, Yong-Jin, Hong, Young Joon, Lee, Chul-Ho, and Yi, Gyu-Chul. 2017. "Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition". United States. doi:10.1088/1361-6528/aa7ec5. https://www.osti.gov/servlets/purl/1392807.
@article{osti_1392807,
title = {Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition},
author = {Yoo, Jinkyoung and Ahmed, Towfiq and Tang, Wei and Kim, Yong-Jin and Hong, Young Joon and Lee, Chul-Ho and Yi, Gyu-Chul},
abstractNote = {ZnO radial p–n junction architecture has the potential for forward-leap of light-emitting diode (LED) technology in terms of higher efficacy and economical production. Here, we report on ZnO radial p–n junction-based light emitting diodes prepared by full metalorganic chemical vapour deposition (MOCVD) with hydrogen-assisted p-type doping approach. The p-type ZnO(P) thin films were prepared by MOCVD with the precursors of dimethylzinc, tert-butanol, and tertiarybutylphosphine. Controlling the precursor flow for dopant results in the systematic change of doping concentration, Hall mobility, and electrical conductivity. Moreover, the approach of hydrogen-assisted phosphorous doping in ZnO expands the understanding of doping behaviour in ZnO. Ultraviolet and visible electroluminescence of ZnO radial p–n junction was demonstrated through a combination of position-controlled nano/microwire and crystalline p-type ZnO(P) radial shell growth on the wires. Lastly, the reported research opens a pathway of realisation of production-compatible ZnO p–n junction LEDs.},
doi = {10.1088/1361-6528/aa7ec5},
journal = {Nanotechnology},
number = 39,
volume = 28,
place = {United States},
year = {2017},
month = {9}
}