skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Analysis of the intermediate-band absorption properties of type-II GaSb/GaAs quantum-dot photovoltaics

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1390657
Grant/Contract Number:  
SC0000957
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 96 Journal Issue: 12; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Ramiro, I., Villa, J., Tablero, C., Antolín, E., Luque, A., Martí, A., Hwang, J., Phillips, J., Martin, A. J., and Millunchick, J. Analysis of the intermediate-band absorption properties of type-II GaSb/GaAs quantum-dot photovoltaics. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.125422.
Ramiro, I., Villa, J., Tablero, C., Antolín, E., Luque, A., Martí, A., Hwang, J., Phillips, J., Martin, A. J., & Millunchick, J. Analysis of the intermediate-band absorption properties of type-II GaSb/GaAs quantum-dot photovoltaics. United States. doi:10.1103/PhysRevB.96.125422.
Ramiro, I., Villa, J., Tablero, C., Antolín, E., Luque, A., Martí, A., Hwang, J., Phillips, J., Martin, A. J., and Millunchick, J. Fri . "Analysis of the intermediate-band absorption properties of type-II GaSb/GaAs quantum-dot photovoltaics". United States. doi:10.1103/PhysRevB.96.125422.
@article{osti_1390657,
title = {Analysis of the intermediate-band absorption properties of type-II GaSb/GaAs quantum-dot photovoltaics},
author = {Ramiro, I. and Villa, J. and Tablero, C. and Antolín, E. and Luque, A. and Martí, A. and Hwang, J. and Phillips, J. and Martin, A. J. and Millunchick, J.},
abstractNote = {},
doi = {10.1103/PhysRevB.96.125422},
journal = {Physical Review B},
number = 12,
volume = 96,
place = {United States},
year = {2017},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.96.125422

Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Experimental demonstration of the effect of field damping layers in quantum-dot intermediate band solar cells
journal, September 2015


Carrier dynamics of the intermediate state in InAs/GaAs quantum dots coupled in a photonic cavity under two-photon excitation
journal, July 2012


Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
journal, June 1997


Theoretical and experimental examination of the intermediate-band concept for strain-balanced (In,Ga)As/Ga(As,P) quantum dot solar cells
journal, November 2008


Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells
journal, January 2014

  • Wagener, M. C.; Carrington, P. J.; Botha, J. R.
  • Journal of Applied Physics, Vol. 115, Issue 1
  • DOI: 10.1063/1.4861129

Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots
journal, July 2012


Effective harvesting, detection, and conversion of IR radiation due to quantum dots with built-in charge
journal, January 2011

  • Sablon, Kimberly; Sergeev, Andrei; Vagidov, Nizami
  • Nanoscale Research Letters, Vol. 6, Issue 1
  • DOI: 10.1186/1556-276X-6-584

Intermediate band solar cells: Recent progress and future directions
journal, June 2015

  • Okada, Y.; Ekins-Daukes, N. J.; Kita, T.
  • Applied Physics Reviews, Vol. 2, Issue 2
  • DOI: 10.1063/1.4916561

Voltage limitation analysis in strain-balanced InAs/GaAsN quantum dot solar cells applied to the intermediate band concept
journal, January 2015


Energy levels in self-assembled quantum arbitrarily shaped dots
journal, February 2005

  • Tablero, C.
  • The Journal of Chemical Physics, Vol. 122, Issue 6
  • DOI: 10.1063/1.1844395

Spectrally Resolved Interband and Intraband Transitions by Two-Step Photon Absorption in InGaAs/GaAs Quantum Dot Solar Cells
journal, January 2015


Band‐gap narrowing in highly doped n ‐ and p ‐type GaAs studied by photoluminescence spectroscopy
journal, November 1989

  • Borghs, G.; Bhattacharyya, K.; Deneffe, K.
  • Journal of Applied Physics, Vol. 66, Issue 9
  • DOI: 10.1063/1.343958

Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots
journal, June 1998

  • Xu, S. J.; Wang, X. C.; Chua, S. J.
  • Applied Physics Letters, Vol. 72, Issue 25
  • DOI: 10.1063/1.121595

Near 1 V open circuit voltage InAs/GaAs quantum dot solar cells
journal, April 2011

  • Bailey, Christopher G.; Forbes, David V.; Raffaelle, Ryne P.
  • Applied Physics Letters, Vol. 98, Issue 16
  • DOI: 10.1063/1.3580765

Band-edge diagrams for strained III–V semiconductor quantum wells, wires, and dots
journal, November 2005


Voltage recovery in intermediate band solar cells
journal, March 2012


Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect
journal, November 1984


Quantum dot energy levels and spectrum for different geometries
journal, October 2009


InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure
journal, October 1995


Emitter degradation in quantum dot intermediate band solar cells
journal, June 2007

  • Martí, A.; López, N.; Antolín, E.
  • Applied Physics Letters, Vol. 90, Issue 23
  • DOI: 10.1063/1.2747195

Electric field dependence of optical absorption near the band gap of quantum-well structures
journal, July 1985


Review of Experimental Results Related to the Operation of Intermediate Band Solar Cells
journal, March 2014


Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings
journal, July 2014

  • Wagener, M. C.; Carrington, P. J.; Botha, J. R.
  • Journal of Applied Physics, Vol. 116, Issue 4
  • DOI: 10.1063/1.4891223

Improving the characteristics of intermediate-band solar cell devices using a vertically aligned InAs/GaAsSb quantum dot structure
journal, October 2012


Optically Triggered Infrared Photodetector
journal, December 2014

  • Ramiro, Íñigo; Martí, Antonio; Antolín, Elisa
  • Nano Letters, Vol. 15, Issue 1
  • DOI: 10.1021/nl503437z

Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells
journal, May 2012

  • Carrington, Peter James; Mahajumi, Abu Syed; Wagener, Magnus C.
  • Physica B: Condensed Matter, Vol. 407, Issue 10
  • DOI: 10.1016/j.physb.2011.09.069

Carrier thermal escape and retrapping in self-assembled quantum dots
journal, September 1999


InAs/InGaP quantum dot solar cells with an AlGaAs interlayer
journal, January 2016


Optical investigations of the dynamic behavior of GaSb/GaAs quantum dots
journal, March 1996

  • Sun, C. ‐K.; Wang, G.; Bowers, J. E.
  • Applied Physics Letters, Vol. 68, Issue 11
  • DOI: 10.1063/1.115693

Self-organized colloidal quantum dots and metal nanoparticles for plasmon-enhanced intermediate-band solar cells
journal, August 2013


Some advantages of intermediate band solar cells based on type II quantum dots
journal, September 2013

  • Luque, Antonio; Linares, Pablo G.; Mellor, Alex
  • Applied Physics Letters, Vol. 103, Issue 12
  • DOI: 10.1063/1.4821580

Optical investigation of type II GaSb∕GaAs self-assembled quantum dots
journal, December 2007

  • Alonso-Álvarez, Diego; Alén, Benito; García, Jorge M.
  • Applied Physics Letters, Vol. 91, Issue 26
  • DOI: 10.1063/1.2827582

Calculated natural band offsets of all II–VI and III–V semiconductors: Chemical trends and the role of cation d orbitals
journal, April 1998

  • Wei, Su-Huai; Zunger, Alex
  • Applied Physics Letters, Vol. 72, Issue 16
  • DOI: 10.1063/1.121249

Band alignment of semiconductors from density-functional theory and many-body perturbation theory
journal, October 2014


Evidence of two-photon absorption in strain-free quantum dot GaAs/AlGaAs solar cells
journal, January 2013

  • Scaccabarozzi, Andrea; Adorno, Silvia; Bietti, Sergio
  • physica status solidi (RRL) - Rapid Research Letters, Vol. 7, Issue 3
  • DOI: 10.1002/pssr.201206518

GaSb∕GaAs type II quantum dot solar cells for enhanced infrared spectral response
journal, April 2007

  • Laghumavarapu, R. B.; Moscho, A.; Khoshakhlagh, A.
  • Applied Physics Letters, Vol. 90, Issue 17
  • DOI: 10.1063/1.2734492

Efficient Carrier Relaxation Mechanism in InGaAs/GaAs Self-Assembled Quantum Dots Based on the Existence of Continuum States
journal, May 1999


Three-Bandgap Absolute Quantum Efficiency in GaSb/GaAs Quantum Dot Intermediate Band Solar Cells
journal, March 2017


Wide-Bandgap InAs/InGaP Quantum-Dot Intermediate Band Solar Cells
journal, May 2015


A metallic intermediate band high efficiency solar cell: AN INTERMEDIATE BANDGAP HIGH EFFICIENCY SOLAR CELL
journal, March 2001

  • Luque, Antonio; Martí, Antonio
  • Progress in Photovoltaics: Research and Applications, Vol. 9, Issue 2
  • DOI: 10.1002/pip.354

Carrier dynamics in type-II GaSb/GaAs quantum dots
journal, February 1998


Improved device performance of InAs∕GaAs quantum dot solar cells with GaP strain compensation layers
journal, December 2007

  • Laghumavarapu, R. B.; El-Emawy, M.; Nuntawong, N.
  • Applied Physics Letters, Vol. 91, Issue 24
  • DOI: 10.1063/1.2816904

Understanding intermediate-band solar cells
journal, February 2012

  • Luque, Antonio; Martí, Antonio; Stanley, Colin
  • Nature Photonics, Vol. 6, Issue 3
  • DOI: 10.1038/nphoton.2012.1

Structure and intermixing of GaSb∕GaAs quantum dots
journal, December 2004

  • Timm, R.; Eisele, H.; Lenz, A.
  • Applied Physics Letters, Vol. 85, Issue 24
  • DOI: 10.1063/1.1833560

The disintegration of GaSb/GaAs nanostructures upon capping
journal, March 2013

  • Martin, Andrew J.; Hwang, Jinyoung; Marquis, Emmanuelle A.
  • Applied Physics Letters, Vol. 102, Issue 11
  • DOI: 10.1063/1.4796036

Direct Observation of Two-Step Photon Absorption in an InAs/GaAs Single Quantum Dot for the Operation of Intermediate-Band Solar Cells
journal, June 2015


Energy conversion approaches and materials for high-efficiency photovoltaics
journal, December 2016

  • Green, Martin A.; Bremner, Stephen P.
  • Nature Materials, Vol. 16, Issue 1
  • DOI: 10.1038/nmat4676

The feasibility of high-efficiency InAs/GaAs quantum dot intermediate band solar cells
journal, November 2014


Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy
journal, June 1999

  • Suzuki, K.; Hogg, R. A.; Arakawa, Y.
  • Journal of Applied Physics, Vol. 85, Issue 12
  • DOI: 10.1063/1.370622

Band lineups and deformation potentials in the model-solid theory
journal, January 1989


Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell
journal, September 2010

  • Antolín, E.; Martí, A.; Farmer, C. D.
  • Journal of Applied Physics, Vol. 108, Issue 6
  • DOI: 10.1063/1.3468520

Band-gap shifts in heavily doped n -type GaAs
journal, June 1986


Radiative recombination in type‐II GaSb/GaAs quantum dots
journal, July 1995

  • Hatami, F.; Ledentsov, N. N.; Grundmann, M.
  • Applied Physics Letters, Vol. 67, Issue 5
  • DOI: 10.1063/1.115193

450 meV hole localization in GaSb/GaAs quantum dots
journal, April 2003

  • Geller, M.; Kapteyn, C.; Müller-Kirsch, L.
  • Applied Physics Letters, Vol. 82, Issue 16
  • DOI: 10.1063/1.1569413

Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells
journal, August 2008

  • Oshima, Ryuji; Takata, Ayami; Okada, Yoshitaka
  • Applied Physics Letters, Vol. 93, Issue 8
  • DOI: 10.1063/1.2973398

AlGaInAs quantum dot solar cells: tailoring quantum dots for intermediate band formation
journal, January 2012


Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-II GaSb Quantum-Dot Intermediate-Band Solar Cells
journal, June 2014