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Title: Electrically Tunable Integrated Thin-Film Magnetoelectric Resonators

Abstract

Magnetoelectrics have attracted much attention for their ability to control magnetic behavior electrically and electrical behavior magnetically. This feature provides numerous benefits to electronic systems and can potentially serve as the bridge needed to integrate magnetic devices into mainstream electronics. This natural next step is pursued and thin-film integrated magnetoelectric devices are produced for radio-frequency (RF) electronics. The first fully integrated, thin-film magnetoelectric modulators for tunable RF electronics are presented. Moreover, these devices provide electric field control of magnetic permeability in order to change the phase velocity and resonance frequency of coplanar waveguides. During this study, the various thin-film material phenomena, trade-offs, and integration considerations for composite magnetoelectrics are analyzed and discussed. The fabricated devices achieve reversible tunability of the resonance frequency, characterized by a remarkable converse magnetoelectric coupling coefficient of up to 24 mG cm V-1 using just thin films. Based on this work, suggestions are given for additional optimizations of future designs that will maximize the thin-film magnetoelectric interactions.

Authors:
ORCiD logo [1];  [2];  [1];  [2];  [3];  [4];  [5]
  1. Stanford Univ., CA (United States). Electrical Engineering
  2. Radiant Technologies, Inc., Albuquerque NM (United States)
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  4. Stanford Univ., CA (United States). Materials Science and Engineering
  5. Stanford Univ., CA (United States). Electrical Engineering, Materials Science and Engineering
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1390632
Grant/Contract Number:  
AC02-76SF00515; FA9550-11-C-0028
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Materials Technologies
Additional Journal Information:
Journal Volume: 2; Journal Issue: 8; Journal ID: ISSN 2365-709X
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; integrated magnetoelectric; magnetic devices; multiferronic; radio frequency; thin film

Citation Formats

El-Ghazaly, Amal, Evans, Joseph T., Sato, Noriyuki, Montross, Naomi, Ohldag, Hendrik, White, Robert M., and Wang, Shan X. Electrically Tunable Integrated Thin-Film Magnetoelectric Resonators. United States: N. p., 2017. Web. doi:10.1002/admt.201700062.
El-Ghazaly, Amal, Evans, Joseph T., Sato, Noriyuki, Montross, Naomi, Ohldag, Hendrik, White, Robert M., & Wang, Shan X. Electrically Tunable Integrated Thin-Film Magnetoelectric Resonators. United States. doi:10.1002/admt.201700062.
El-Ghazaly, Amal, Evans, Joseph T., Sato, Noriyuki, Montross, Naomi, Ohldag, Hendrik, White, Robert M., and Wang, Shan X. Wed . "Electrically Tunable Integrated Thin-Film Magnetoelectric Resonators". United States. doi:10.1002/admt.201700062. https://www.osti.gov/servlets/purl/1390632.
@article{osti_1390632,
title = {Electrically Tunable Integrated Thin-Film Magnetoelectric Resonators},
author = {El-Ghazaly, Amal and Evans, Joseph T. and Sato, Noriyuki and Montross, Naomi and Ohldag, Hendrik and White, Robert M. and Wang, Shan X.},
abstractNote = {Magnetoelectrics have attracted much attention for their ability to control magnetic behavior electrically and electrical behavior magnetically. This feature provides numerous benefits to electronic systems and can potentially serve as the bridge needed to integrate magnetic devices into mainstream electronics. This natural next step is pursued and thin-film integrated magnetoelectric devices are produced for radio-frequency (RF) electronics. The first fully integrated, thin-film magnetoelectric modulators for tunable RF electronics are presented. Moreover, these devices provide electric field control of magnetic permeability in order to change the phase velocity and resonance frequency of coplanar waveguides. During this study, the various thin-film material phenomena, trade-offs, and integration considerations for composite magnetoelectrics are analyzed and discussed. The fabricated devices achieve reversible tunability of the resonance frequency, characterized by a remarkable converse magnetoelectric coupling coefficient of up to 24 mG cm V-1 using just thin films. Based on this work, suggestions are given for additional optimizations of future designs that will maximize the thin-film magnetoelectric interactions.},
doi = {10.1002/admt.201700062},
journal = {Advanced Materials Technologies},
number = 8,
volume = 2,
place = {United States},
year = {2017},
month = {6}
}

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