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Title: Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures

Journal Article · · Physical Review Materials

Not Available

Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
NA0003525
OSTI ID:
1390380
Journal Information:
Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 4 Vol. 1; ISSN PRMHAR; ISSN 2475-9953
Publisher:
American Physical SocietyCopyright Statement
Country of Publication:
United States
Language:
English

References (26)

Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions journal June 2011
Academic and industry research progress in germanium nanodevices journal November 2011
Coherent singlet-triplet oscillations in a silicon-based double quantum dot journal January 2012
High room-temperature hole mobility in Ge0.7Si0.3/Ge/Ge0.7Si0.3 modulation-doped heterostructures journal February 2001
Scattering mechanisms in high-mobility strained Ge channels journal April 2004
Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures journal August 2007
Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures journal September 2009
Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry journal July 2011
Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors journal October 2011
Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures journal July 2012
Ultra-high hole mobility exceeding one million in a strained germanium quantum well journal October 2012
Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber journal September 2013
Screening of remote charge scattering sites from the oxide/silicon interface of strained Si two-dimensional electron gases by an intermediate tunable shielding electron layer journal June 2014
Scattering mechanisms in shallow undoped Si/SiGe quantum wells journal October 2015
Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure journal June 2016
Spin-splitting in p-type Ge devices journal August 2016
Analysis of interface trap density of plasma post-nitrided Al 2 O 3 /SiGe MOS interface with high Ge content using high-temperature conductance method journal September 2016
Si/SiGe heterostructures: from material and physics to devices and circuits journal September 2004
Observation of microwave-induced resistance oscillations in a high-mobility two-dimensional hole gas in a strained Ge/SiGe quantum well journal March 2014
Spinless composite fermions in an ultrahigh-quality strained Ge quantum well journal June 2015
Charge Relaxation in a Single-Electron Si / SiGe Double Quantum Dot journal July 2013
Fractional Quantum Hall States in a Ge Quantum Well journal April 2016
Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs journal August 2010
Comparison of mobility-limiting mechanisms in high-mobility Si1−xGex heterostructures journal July 1993
Direct Evidence of GeO Volatilization from GeO 2 /Ge and Impact of Its Suppression on GeO 2 /Ge Metal–Insulator–Semiconductor Characteristics journal April 2008
Germanium Based Field-Effect Transistors: Challenges and Opportunities journal March 2014