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Title: Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1390380
Grant/Contract Number:  
NA-0003525
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Name: Physical Review Materials Journal Volume: 1 Journal Issue: 4; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Su, Yi-Hsin, Chuang, Yen, Liu, Chia-You, Li, Jiun-Yun, and Lu, Tzu-Ming. Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures. United States: N. p., 2017. Web. doi:10.1103/PhysRevMaterials.1.044601.
Su, Yi-Hsin, Chuang, Yen, Liu, Chia-You, Li, Jiun-Yun, & Lu, Tzu-Ming. Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures. United States. doi:10.1103/PhysRevMaterials.1.044601.
Su, Yi-Hsin, Chuang, Yen, Liu, Chia-You, Li, Jiun-Yun, and Lu, Tzu-Ming. Thu . "Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures". United States. doi:10.1103/PhysRevMaterials.1.044601.
@article{osti_1390380,
title = {Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures},
author = {Su, Yi-Hsin and Chuang, Yen and Liu, Chia-You and Li, Jiun-Yun and Lu, Tzu-Ming},
abstractNote = {},
doi = {10.1103/PhysRevMaterials.1.044601},
journal = {Physical Review Materials},
number = 4,
volume = 1,
place = {United States},
year = {2017},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevMaterials.1.044601

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Cited by: 4 works
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