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Title: Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures

Journal Article · · Physical Review Materials

Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
NA-0003525
OSTI ID:
1390380
Journal Information:
Physical Review Materials, Journal Name: Physical Review Materials Vol. 1 Journal Issue: 4; ISSN 2475-9953
Publisher:
American Physical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 18 works
Citation information provided by
Web of Science

References (26)

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Scattering mechanisms in shallow undoped Si/SiGe quantum wells journal October 2015
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Direct Evidence of GeO Volatilization from GeO 2 /Ge and Impact of Its Suppression on GeO 2 /Ge Metal–Insulator–Semiconductor Characteristics journal April 2008
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Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions journal June 2011
High room-temperature hole mobility in Ge0.7Si0.3/Ge/Ge0.7Si0.3 modulation-doped heterostructures journal February 2001