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Title: Nucleation of melting and solidification in confined high aspect ratio thin films

Journal Article · · Journal of Applied Physics
DOI: https://doi.org/10.1063/1.4997583 · OSTI ID:1390354
 [1]; ORCiD logo [1];  [1]
  1. Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

Sponsoring Organization:
USDOE
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
1390354
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 122 Journal Issue: 10; ISSN 0021-8979
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

References (16)

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Comment on “Large Melting-Point Hysteresis of Ge Nanocrystals Embedded in SiO 2 ” journal August 2007
Direct growth of single-crystalline III–V semiconductors on amorphous substrates journal January 2016
Liquid bridges between cylinders, in a torus, and between spheres journal January 1971
Xu et al. Reply: journal August 2007
Deterministic Nucleation of InP on Metal Foils with the Thin-Film Vapor–Liquid–Solid Growth Mode journal January 2014
Formation of Crystal Nuclei in Liquid Metals journal October 1950
Single-crystal germanium layers grown on silicon by nanowire seeding journal August 2009
The Thickness Dependence of the Phase Transition Temperature in Thin Solid Films journal October 1986
Meniscus Stability journal January 1981
A direct thin-film path towards low-cost large-area III-V photovoltaics journal July 2013
Model calculations for capillary condensation journal September 1966