Point defects in Cu2ZnSnSe4(CZTSe): Resonant X-ray diffraction study of the low-temperature order/disorder transition
Abstract
The interest in Cu 2 ZnSn(S,Se) 4 (CZTS) for photovoltaic applications is motivated by similarities to Cu(In,Ga)Se 2 while being comprised of non‐toxic and earth abundant elements. However, CZTS suffers from a V oc deficit, where the V oc is much lower than expected based on the band gap, which may be the result of a high concentration of point‐defects in the CZTS lattice. Recently, reports have observed a low‐temperature order/disorder transition by Raman and optical spectroscopies in CZTS films and is reported to describe the ordering of Cu and Zn atoms in the CZTS crystal structure. To directly determine the level of Cu/Zn ordering, we have used resonant‐XRD, a site, and element specific probe of long range order. We used CZTSe films annealed just below and quenched from just above the transition temperature; based on previous work, the Cu and Zn should be ordered and highly disordered, respectively. Our data show that there is some Cu/Zn ordering near the low temperature transition but significantly less than high chemical order expected from Raman. To understand both our resonant‐XRD results and the Raman results, we present a structural model that involves antiphase domain boundaries and accommodates the excess Zn within themore »
- Authors:
-
- SLAC National Accelerator Lab., Menlo Park, CA (United States). Applied Energy Programs
- SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Stanford Univ., CA (United States). Materials Science and Engineering Department
- SLAC National Accelerator Lab., Menlo Park, CA (United States). Applied Energy Programs and Stanford Synchrotron Radiation Lightsource
- Publication Date:
- Research Org.:
- SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- OSTI Identifier:
- 1395248
- Alternate Identifier(s):
- OSTI ID: 1390346
- Grant/Contract Number:
- AC02-76SF00515; AC36-08-GO28308; ECCS-1542152; DGE-1656518; DE‐AC02‐76SF00515; DE‐AC36‐08‐GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physica Status Solidi B. Basic Solid State Physics
- Additional Journal Information:
- Journal Volume: 254; Journal Issue: 9; Journal ID: ISSN 0370-1972
- Publisher:
- Wiley-Blackwell
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 14 SOLAR ENERGY; Cu2ZnSnSe; order–disorder transitions; point defectes; thin films; X-ray diffraction
Citation Formats
Schelhas, L. T., Stone, K. H., Harvey, S. P., Zakhidov, D., Salleo, A., Teeter, G., Repins, I. L., and Toney, M. F. Point defects in Cu2ZnSnSe4(CZTSe): Resonant X-ray diffraction study of the low-temperature order/disorder transition. United States: N. p., 2017.
Web. doi:10.1002/pssb.201700156.
Schelhas, L. T., Stone, K. H., Harvey, S. P., Zakhidov, D., Salleo, A., Teeter, G., Repins, I. L., & Toney, M. F. Point defects in Cu2ZnSnSe4(CZTSe): Resonant X-ray diffraction study of the low-temperature order/disorder transition. United States. https://doi.org/10.1002/pssb.201700156
Schelhas, L. T., Stone, K. H., Harvey, S. P., Zakhidov, D., Salleo, A., Teeter, G., Repins, I. L., and Toney, M. F. Tue .
"Point defects in Cu2ZnSnSe4(CZTSe): Resonant X-ray diffraction study of the low-temperature order/disorder transition". United States. https://doi.org/10.1002/pssb.201700156. https://www.osti.gov/servlets/purl/1395248.
@article{osti_1395248,
title = {Point defects in Cu2ZnSnSe4(CZTSe): Resonant X-ray diffraction study of the low-temperature order/disorder transition},
author = {Schelhas, L. T. and Stone, K. H. and Harvey, S. P. and Zakhidov, D. and Salleo, A. and Teeter, G. and Repins, I. L. and Toney, M. F.},
abstractNote = {The interest in Cu 2 ZnSn(S,Se) 4 (CZTS) for photovoltaic applications is motivated by similarities to Cu(In,Ga)Se 2 while being comprised of non‐toxic and earth abundant elements. However, CZTS suffers from a V oc deficit, where the V oc is much lower than expected based on the band gap, which may be the result of a high concentration of point‐defects in the CZTS lattice. Recently, reports have observed a low‐temperature order/disorder transition by Raman and optical spectroscopies in CZTS films and is reported to describe the ordering of Cu and Zn atoms in the CZTS crystal structure. To directly determine the level of Cu/Zn ordering, we have used resonant‐XRD, a site, and element specific probe of long range order. We used CZTSe films annealed just below and quenched from just above the transition temperature; based on previous work, the Cu and Zn should be ordered and highly disordered, respectively. Our data show that there is some Cu/Zn ordering near the low temperature transition but significantly less than high chemical order expected from Raman. To understand both our resonant‐XRD results and the Raman results, we present a structural model that involves antiphase domain boundaries and accommodates the excess Zn within the CZTS lattice.},
doi = {10.1002/pssb.201700156},
journal = {Physica Status Solidi B. Basic Solid State Physics},
number = 9,
volume = 254,
place = {United States},
year = {Tue Jul 25 00:00:00 EDT 2017},
month = {Tue Jul 25 00:00:00 EDT 2017}
}
Web of Science
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Works referencing / citing this record:
The effect of stoichiometry on Cu-Zn ordering kinetics in Cu 2 ZnSnS 4 thin films
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