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Title: Janus Monolayer Transition-Metal Dichalcogenides

Abstract

In this work, the crystal configuration of sandwiched S–Mo–Se structure (Janus SMoSe) at the monolayer limit has been synthesized and carefully characterized. By controlled sulfurization of monolayer MoSe2, the top layer of selenium atoms is substituted by sulfur atoms, while the bottom selenium layer remains intact. Furthermore, the structure of this material is systematically investigated by Raman, photoluminescence, transmission electron microscopy, and X-ray photoelectron spectroscopy and confirmed by time-of-flight secondary ion mass spectrometry. Density functional theory (DFT) calculations are performed to better understand the Raman vibration modes and electronic structures of the Janus SMoSe monolayer, which are found to correlate well with corresponding experimental results. Finally, high basal plane hydrogen evolution reaction activity is discovered for the Janus monolayer, and DFT calculation implies that the activity originates from the synergistic effect of the intrinsic defects and structural strain inherent in the Janus structure.

Authors:
ORCiD logo [1];  [1];  [2];  [3];  [3];  [1];  [1];  [1];  [3]; ORCiD logo [2];  [1]
  1. Rice Univ., Houston, TX (United States). Dept. of Materials Science and Engineering
  2. Univ. of Texas, Austin, TX (United States). Dept. of Mechanical Engineering
  3. Univ. of Pennsylvania, Philadelphia, PA (United States). Dept. of Materials Science and Engineering
Publication Date:
Research Org.:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Org.:
USDOE; National Science Foundation (NSF)
OSTI Identifier:
1390290
Grant/Contract Number:  
AC02-76SF00515; EFRI-1433467
Resource Type:
Accepted Manuscript
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 11; Journal Issue: 8; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; HER; Janus SMoSe; sulfurization; TOF-SIMS

Citation Formats

Zhang, Jing, Jia, Shuai, Kholmanov, Iskandar, Dong, Liang, Er, Dequan, Chen, Weibing, Guo, Hua, Jin, Zehua, Shenoy, Vivek B., Shi, Li, and Lou, Jun. Janus Monolayer Transition-Metal Dichalcogenides. United States: N. p., 2017. Web. doi:10.1021/acsnano.7b03186.
Zhang, Jing, Jia, Shuai, Kholmanov, Iskandar, Dong, Liang, Er, Dequan, Chen, Weibing, Guo, Hua, Jin, Zehua, Shenoy, Vivek B., Shi, Li, & Lou, Jun. Janus Monolayer Transition-Metal Dichalcogenides. United States. https://doi.org/10.1021/acsnano.7b03186
Zhang, Jing, Jia, Shuai, Kholmanov, Iskandar, Dong, Liang, Er, Dequan, Chen, Weibing, Guo, Hua, Jin, Zehua, Shenoy, Vivek B., Shi, Li, and Lou, Jun. Thu . "Janus Monolayer Transition-Metal Dichalcogenides". United States. https://doi.org/10.1021/acsnano.7b03186. https://www.osti.gov/servlets/purl/1390290.
@article{osti_1390290,
title = {Janus Monolayer Transition-Metal Dichalcogenides},
author = {Zhang, Jing and Jia, Shuai and Kholmanov, Iskandar and Dong, Liang and Er, Dequan and Chen, Weibing and Guo, Hua and Jin, Zehua and Shenoy, Vivek B. and Shi, Li and Lou, Jun},
abstractNote = {In this work, the crystal configuration of sandwiched S–Mo–Se structure (Janus SMoSe) at the monolayer limit has been synthesized and carefully characterized. By controlled sulfurization of monolayer MoSe2, the top layer of selenium atoms is substituted by sulfur atoms, while the bottom selenium layer remains intact. Furthermore, the structure of this material is systematically investigated by Raman, photoluminescence, transmission electron microscopy, and X-ray photoelectron spectroscopy and confirmed by time-of-flight secondary ion mass spectrometry. Density functional theory (DFT) calculations are performed to better understand the Raman vibration modes and electronic structures of the Janus SMoSe monolayer, which are found to correlate well with corresponding experimental results. Finally, high basal plane hydrogen evolution reaction activity is discovered for the Janus monolayer, and DFT calculation implies that the activity originates from the synergistic effect of the intrinsic defects and structural strain inherent in the Janus structure.},
doi = {10.1021/acsnano.7b03186},
journal = {ACS Nano},
number = 8,
volume = 11,
place = {United States},
year = {Thu Aug 03 00:00:00 EDT 2017},
month = {Thu Aug 03 00:00:00 EDT 2017}
}

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journal, February 2019

  • Han, Sang Wook; Cha, Gi-Beom; Kang, Manil
  • Journal of Applied Physics, Vol. 125, Issue 8
  • DOI: 10.1063/1.5079281

Environmental stability of bismuthene: oxidation mechanism and structural stability of 2D pnictogens
journal, January 2019

  • Kistanov, Andrey A.; Khadiullin, Salavat Kh.; Zhou, Kun
  • Journal of Materials Chemistry C, Vol. 7, Issue 30
  • DOI: 10.1039/c9tc03219c

Emergence of a spin-valley Dirac semimetal in a strained group-VA monolayer
journal, January 2020

  • Zhang, Meng-Han; Zhang, Shu-Feng; Wang, Pei-Ji
  • Nanoscale, Vol. 12, Issue 6
  • DOI: 10.1039/c9nr09545d

Probing the active sites of newly predicted stable Janus scandium dichalcogenides for photocatalytic water-splitting
journal, January 2019

  • Yang, Xiaoyong; Banerjee, Amitava; Ahuja, Rajeev
  • Catalysis Science & Technology, Vol. 9, Issue 18
  • DOI: 10.1039/c9cy01014a

Rashba spin splitting and photocatalytic properties of GeC M SSe ( M = Mo , W) van der Waals heterostructures
journal, October 2019


Stabilities, and electronic and piezoelectric properties of two-dimensional tin dichalcogenide derived Janus monolayers
journal, January 2019

  • Zhang, Xiaoli; Cui, Yu; Sun, Liping
  • Journal of Materials Chemistry C, Vol. 7, Issue 42
  • DOI: 10.1039/c9tc04461b

Spin-orbit coupling induced valley Hall effects in transition-metal dichalcogenides
journal, March 2019

  • Zhou, Benjamin T.; Taguchi, Katsuhisa; Kawaguchi, Yuki
  • Communications Physics, Vol. 2, Issue 1
  • DOI: 10.1038/s42005-019-0127-7

Functionalized MXenes as ideal electrodes for Janus MoSSe
journal, January 2019

  • Wang, Yuanyuan; Wei, Wei; Huang, Baibiao
  • Physical Chemistry Chemical Physics, Vol. 21, Issue 1
  • DOI: 10.1039/c8cp06257a

Two-dimensional transition metal dichalcogenides: interface and defect engineering
journal, January 2018

  • Hu, Zehua; Wu, Zhangting; Han, Cheng
  • Chemical Society Reviews, Vol. 47, Issue 9
  • DOI: 10.1039/c8cs00024g

Janus single layers of In 2 SSe : A first-principles study
journal, April 2018


Spin polarization properties of two-dimensional MoSeTe induced by transition-metal doping: first-principles calculations
journal, December 2019


Second harmonic generation in Janus MoSSe a monolayer and stacked bulk with vertical asymmetry
journal, January 2019

  • Wei, Yadong; Xu, Xiaodong; Wang, Songsong
  • Physical Chemistry Chemical Physics, Vol. 21, Issue 37
  • DOI: 10.1039/c9cp03395e

Interface-controlled band alignment transition and optical properties of Janus MoSSe/GaN vdW heterobilayers
journal, November 2019

  • Xu, Dong; Zhai, Baoxing; Gao, Qiang
  • Journal of Physics D: Applied Physics, Vol. 53, Issue 5
  • DOI: 10.1088/1361-6463/ab50f9

Enhanced thermoelectric performance of monolayer MoSSe, bilayer MoSSe and graphene/MoSSe heterogeneous nanoribbons
journal, January 2019

  • Deng, Shuo; Li, Lijie; Guy, Owen J.
  • Physical Chemistry Chemical Physics, Vol. 21, Issue 33
  • DOI: 10.1039/c9cp03639c

Band gap engineering of a MoS 2 monolayer through oxygen alloying: an ab initio study
journal, October 2018


Two-dimensional spin–valley-coupled Dirac semimetals in functionalized SbAs monolayers
journal, January 2019

  • Liu, Zhifeng; Feng, Wangxiang; Xin, Hongli
  • Materials Horizons, Vol. 6, Issue 4
  • DOI: 10.1039/c8mh01588k

Optoelectronic and solar cell applications of Janus monolayers and their van der Waals heterostructures
journal, January 2019

  • Idrees, M.; Din, H. U.; Ali, R.
  • Physical Chemistry Chemical Physics, Vol. 21, Issue 34
  • DOI: 10.1039/c9cp02648g

Prediction of high-temperature Chern insulator with half-metallic edge states in asymmetry-functionalized stanene
journal, January 2018

  • Zhang, Meng-han; Zhang, Chang-wen; Wang, Pei-ji
  • Nanoscale, Vol. 10, Issue 43
  • DOI: 10.1039/c8nr07503d

Emergence of high piezoelectricity along with robust electron mobility in Janus structures in semiconducting Group IVB dichalcogenide monolayers
journal, January 2018

  • Dimple, Dimple; Jena, Nityasagar; Rawat, Ashima
  • Journal of Materials Chemistry A, Vol. 6, Issue 48
  • DOI: 10.1039/c8ta08781d

Thermoelectric properties of 1 T monolayer pristine and Janus Pd dichalcogenides
journal, August 2019


Strong interlayer hybridization in the aligned SnS2/WSe2 hetero-bilayer structure
journal, July 2019

  • Zribi, Jihene; Khalil, Lama; Zheng, Biyuan
  • npj 2D Materials and Applications, Vol. 3, Issue 1
  • DOI: 10.1038/s41699-019-0109-3

van der Waals heterostructure for photocatalysis: Graphitic carbon nitride and Janus transition-metal dichalcogenides
journal, September 2019


Spin-orbit coupling induced valley Hall effects in transition-metal dichalcogenides
text, January 2017


Environmental Stability of Bismuthene: Oxidation Mechanism and Structural Stability of 2D Pnictogens
text, January 2019


Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide
journal, September 2019

  • Brotons-Gisbert, Mauro; Proux, Raphaël; Picard, Raphaël
  • Nature Communications, Vol. 10, Issue 1
  • DOI: 10.1038/s41467-019-11920-4

The MoSeS dynamic omnigami paradigm for smart shape and composition programmable 2D materials
journal, November 2019