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This content will become publicly available on September 12, 2018

Title: First-Principles Calculations of Quantum Efficiency for Point Defects in Semiconductors: The Example of Yellow Luminance by GaN: C N +O N and GaN:C N

Authors:
 [1] ;  [2] ;  [3] ;  [3] ;  [4] ;  [5]
  1. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 P. R. China, Department of Physics and Key Laboratory of Advanced Energy Storage Materials of Guangdong Province, South China University of Technology, Guangzhou 510640 P. R. China
  2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 P. R. China
  3. Department of Physics and Key Laboratory of Advanced Energy Storage Materials of Guangdong Province, South China University of Technology, Guangzhou 510640 P. R. China
  4. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 P. R. China, Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 P. R. China
  5. Materials Sciences Division, Lawrence Berkeley National Laboratory, One Cyclotron Road, Mail Stop 66 Berkeley CA 94720 USA
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Optical Materials
Additional Journal Information:
Journal Volume: 5; Journal Issue: 21; Related Information: CHORUS Timestamp: 2017-11-02 15:37:13; Journal ID: ISSN 2195-1071
Publisher:
Wiley Blackwell (John Wiley & Sons)
Sponsoring Org:
USDOE
Country of Publication:
Germany
Language:
English
OSTI Identifier:
1389685