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Title: Evidence for the formation of SiGe nanoparticles in Ge-implanted Si 3N 4

SiGe nanoparticles were formed in an amorphous Si 3N 4 matrix by Ge + ion implantation and thermal annealing. The size of the nanoparticles was determined by transmission electron microscopy and their atomic structure by x-ray absorption spectroscopy. Nanoparticles were observed for excess Ge concentrations in the range from 9 to 12 at. % after annealing at temperatures in the range from 700 to 900 °C. The average nanoparticle size increased with excess Ge concentration and annealing temperature and varied from an average diameter of 1.8±0.2 nm for the lowest concentration and annealing temperature to 3.2±0.5 nm for the highest concentration and annealing temperature. Our study demonstrates that the structural properties of embedded SiGe nanoparticles in amorphous Si 3N 4 are sensitive to the implantation and post implantation conditions. Furthermore, we demonstrate that ion implantation is a novel pathway to fabricate and control the SiGe nanoparticle structure and potentially useful for future optoelectronic device applications.
Authors:
 [1] ; ORCiD logo [1] ;  [1] ; ORCiD logo [2] ;  [3]
  1. Australian National Univ., Canberra, ACT (Australia)
  2. Australian Nuclear Science and Technology Organisation (ANSTO), Melbourne, VIC (Australia). Australian Synchrotron
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Report Number(s):
BNL-114218-2017-JA
Journal ID: ISSN 0021-8979
Grant/Contract Number:
SC0012704
Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 121; Journal Issue: 10; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Nuclear Physics (NP) (SC-26)
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
OSTI Identifier:
1389239

Mirzaei, S., Kremer, F., Feng, R., Glover, C. J., and Sprouster, D. J.. Evidence for the formation of SiGe nanoparticles in Ge-implanted Si3N4. United States: N. p., Web. doi:10.1063/1.4977507.
Mirzaei, S., Kremer, F., Feng, R., Glover, C. J., & Sprouster, D. J.. Evidence for the formation of SiGe nanoparticles in Ge-implanted Si3N4. United States. doi:10.1063/1.4977507.
Mirzaei, S., Kremer, F., Feng, R., Glover, C. J., and Sprouster, D. J.. 2017. "Evidence for the formation of SiGe nanoparticles in Ge-implanted Si3N4". United States. doi:10.1063/1.4977507. https://www.osti.gov/servlets/purl/1389239.
@article{osti_1389239,
title = {Evidence for the formation of SiGe nanoparticles in Ge-implanted Si3N4},
author = {Mirzaei, S. and Kremer, F. and Feng, R. and Glover, C. J. and Sprouster, D. J.},
abstractNote = {SiGe nanoparticles were formed in an amorphous Si3N4 matrix by Ge+ ion implantation and thermal annealing. The size of the nanoparticles was determined by transmission electron microscopy and their atomic structure by x-ray absorption spectroscopy. Nanoparticles were observed for excess Ge concentrations in the range from 9 to 12 at. % after annealing at temperatures in the range from 700 to 900 °C. The average nanoparticle size increased with excess Ge concentration and annealing temperature and varied from an average diameter of 1.8±0.2 nm for the lowest concentration and annealing temperature to 3.2±0.5 nm for the highest concentration and annealing temperature. Our study demonstrates that the structural properties of embedded SiGe nanoparticles in amorphous Si3N4 are sensitive to the implantation and post implantation conditions. Furthermore, we demonstrate that ion implantation is a novel pathway to fabricate and control the SiGe nanoparticle structure and potentially useful for future optoelectronic device applications.},
doi = {10.1063/1.4977507},
journal = {Journal of Applied Physics},
number = 10,
volume = 121,
place = {United States},
year = {2017},
month = {3}
}