DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Engineering Topological Surface States of Cr-Doped Bi2Se3 Films by Spin Reorientation and Electric Field

Abstract

The tailoring of topological surface states in topological insulators is essential for device applications and for exploring new topological phase. In this paper, we propose a practical way to induce the quantum anomalous Hall phase and unusual metal–insulator transitions in Cr-doped Bi2Se3 films based on the model Hamiltonian and first-principles calculations. Using the combination of in-plane and plane-normal components of the spin along with external electric fields, we demonstrate that the topological state and band structures of topological insulating films exhibit rich features such as the shift of Dirac cones and the opening of nontrivial band gaps. We also show that the in-plane magnetization leads to significant suppression of inter-TSS scattering in Cr-doped Bi2Se3. Our work provides new strategies to obtain the desired electronic structures for the device, complementary to the efforts of an extensive material search.

Authors:
 [1];  [2];  [1]
  1. Univ. of California, Irvine, CA (United States). Dept. of Physics and Astronomy
  2. Pohang Univ. of Science and Technology (Republic of Korea). Dept. of Physics
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Spins and Heat in Nanoscale Electronic Systems (SHINES)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Research Foundation of Korea (NRF)
OSTI Identifier:
1388924
Grant/Contract Number:  
SC0012670; 2011-0030046
Resource Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 16; Journal Issue: 10; Related Information: SHINES partners with University of California, Riverside (lead); Arizona State University; Colorado State University; Johns Hopkins University; University of California Irvine; University of California Los Angeles; University of Texas at Austin; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; phonons; thermal conductivity; thermoelectric; spin dynamics; spintronics; Dirac cone engineering; topological surface state; spin reorientation; quantum anomalous Hall phase

Citation Formats

Kim, Jeongwoo, Jhi, Seung-Hoon, and Wu, Ruqian. Engineering Topological Surface States of Cr-Doped Bi2Se3 Films by Spin Reorientation and Electric Field. United States: N. p., 2016. Web. doi:10.1021/acs.nanolett.6b03439.
Kim, Jeongwoo, Jhi, Seung-Hoon, & Wu, Ruqian. Engineering Topological Surface States of Cr-Doped Bi2Se3 Films by Spin Reorientation and Electric Field. United States. https://doi.org/10.1021/acs.nanolett.6b03439
Kim, Jeongwoo, Jhi, Seung-Hoon, and Wu, Ruqian. Mon . "Engineering Topological Surface States of Cr-Doped Bi2Se3 Films by Spin Reorientation and Electric Field". United States. https://doi.org/10.1021/acs.nanolett.6b03439. https://www.osti.gov/servlets/purl/1388924.
@article{osti_1388924,
title = {Engineering Topological Surface States of Cr-Doped Bi2Se3 Films by Spin Reorientation and Electric Field},
author = {Kim, Jeongwoo and Jhi, Seung-Hoon and Wu, Ruqian},
abstractNote = {The tailoring of topological surface states in topological insulators is essential for device applications and for exploring new topological phase. In this paper, we propose a practical way to induce the quantum anomalous Hall phase and unusual metal–insulator transitions in Cr-doped Bi2Se3 films based on the model Hamiltonian and first-principles calculations. Using the combination of in-plane and plane-normal components of the spin along with external electric fields, we demonstrate that the topological state and band structures of topological insulating films exhibit rich features such as the shift of Dirac cones and the opening of nontrivial band gaps. We also show that the in-plane magnetization leads to significant suppression of inter-TSS scattering in Cr-doped Bi2Se3. Our work provides new strategies to obtain the desired electronic structures for the device, complementary to the efforts of an extensive material search.},
doi = {10.1021/acs.nanolett.6b03439},
journal = {Nano Letters},
number = 10,
volume = 16,
place = {United States},
year = {Mon Sep 26 00:00:00 EDT 2016},
month = {Mon Sep 26 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 9 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
journal, August 1980


Quantized Hall Conductance in a Two-Dimensional Periodic Potential
journal, August 1982


Z2 Topological Order and the Quantum Spin Hall Effect
journal, September 2005


Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
journal, December 2006

  • Bernevig, B. A.; Hughes, T. L.; Zhang, S.-C.
  • Science, Vol. 314, Issue 5806, p. 1757-1761
  • DOI: 10.1126/science.1133734

Quantized Anomalous Hall Effect in Magnetic Topological Insulators
journal, June 2010


Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
journal, March 2013


High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
journal, March 2015

  • Chang, Cui-Zu; Zhao, Weiwei; Kim, Duk Y.
  • Nature Materials, Vol. 14, Issue 5
  • DOI: 10.1038/nmat4204

Trajectory of the anomalous Hall effect towards the quantized state in a ferromagnetic topological insulator
journal, August 2014

  • Checkelsky, J. G.; Yoshimi, R.; Tsukazaki, A.
  • Nature Physics, Vol. 10, Issue 10
  • DOI: 10.1038/nphys3053

Scale-Invariant Quantum Anomalous Hall Effect in Magnetic Topological Insulators beyond the Two-Dimensional Limit
journal, September 2014


Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films
journal, May 2016


Quantum anomalous Hall effect with field-tunable Chern number near Z 2 topological critical point
journal, September 2015


Proximity-Driven Enhanced Magnetic Order at Ferromagnetic-Insulator–Magnetic-Topological-Insulator Interface
journal, August 2015


Enhancing Magnetic Ordering in Cr-Doped Bi 2 Se 3 Using High- T C Ferrimagnetic Insulator
journal, December 2014

  • Liu, Wenqing; He, Liang; Xu, Yongbing
  • Nano Letters, Vol. 15, Issue 1
  • DOI: 10.1021/nl504480g

Microscopic theory of quantum anomalous Hall effect in graphene
journal, March 2012


High-Mobility Sm-Doped Bi 2 Se 3 Ferromagnetic Topological Insulators and Robust Exchange Coupling
journal, July 2015


Hexagonal Warping Effects in the Surface States of the Topological Insulator Bi 2 Te 3
journal, December 2009


Topological Character and Magnetism of the Dirac State in Mn-Doped Bi 2 Te 3
journal, August 2012


Magnetic phase transition in Fe-doped topological insulator B i 2 S e 3
journal, September 2015


Gap and spin texture engineering of Dirac topological states at the Cr Bi 2 Se 3 interface
journal, June 2016


Quantum anomalous Hall effect in time-reversal-symmetry breaking topological insulators
journal, March 2016


Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit
journal, June 2010

  • Zhang, Yi; He, Ke; Chang, Cui-Zu
  • Nature Physics, Vol. 6, Issue 8
  • DOI: 10.1038/nphys1689

Projector augmented-wave method
journal, December 1994


From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999


Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium
journal, May 1994


Generalized Gradient Approximation Made Simple
journal, October 1996

  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Accurate Molecular Van Der Waals Interactions from Ground-State Electron Density and Free-Atom Reference Data
journal, February 2009


First Principles Calculation of Anomalous Hall Conductivity in Ferromagnetic bcc Fe
journal, January 2004


wannier90: A tool for obtaining maximally-localised Wannier functions
journal, May 2008

  • Mostofi, Arash A.; Yates, Jonathan R.; Lee, Young-Su
  • Computer Physics Communications, Vol. 178, Issue 9
  • DOI: 10.1016/j.cpc.2007.11.016

Observation of Van Hove singularities in twisted graphene layers
journal, November 2009

  • Li, Guohong; Luican, A.; Lopes dos Santos, J. M. B.
  • Nature Physics, Vol. 6, Issue 2
  • DOI: 10.1038/nphys1463

Charge Inversion and Topological Phase Transition at a Twist Angle Induced van Hove Singularity of Bilayer Graphene
journal, July 2016