Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics
Abstract
In this work we demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.
- Authors:
-
- California Inst. of Technology (CalTech), Pasadena, CA (United States)
- Publication Date:
- Research Org.:
- Energy Frontier Research Centers (EFRC) (United States). Light-Material Interactions in Energy Conversion (LMI)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); Swiss National Science Foundation (SNSF); National Science Foundation (NSF)
- OSTI Identifier:
- 1388841
- Grant/Contract Number:
- SC0001293; P2EZP2_159101; 1144469
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nano Letters
- Additional Journal Information:
- Journal Volume: 16; Journal Issue: 9; Related Information: LMI partners with California Institute of Technology (lead); Harvard University; University of Illinois, Urbana-Champaign; Lawrence Berkeley National Laboratory; Journal ID: ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; transition metal dichalcogenides; heterostructures; light trapping; broadband; near-unity absorption; photovoltaics; solar (photovoltaic); solid state lighting; phonons; thermal conductivity; electrodes - solar; materials and chemistry by design; optics; synthesis (novel materials); synthesis (self-assembly)
Citation Formats
Jariwala, Deep, Davoyan, Artur R., Tagliabue, Giulia, Sherrott, Michelle C., Wong, Joeson, and Atwater, Harry A. Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics. United States: N. p., 2016.
Web. doi:10.1021/acs.nanolett.6b01914.
Jariwala, Deep, Davoyan, Artur R., Tagliabue, Giulia, Sherrott, Michelle C., Wong, Joeson, & Atwater, Harry A. Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics. United States. https://doi.org/10.1021/acs.nanolett.6b01914
Jariwala, Deep, Davoyan, Artur R., Tagliabue, Giulia, Sherrott, Michelle C., Wong, Joeson, and Atwater, Harry A. Fri .
"Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics". United States. https://doi.org/10.1021/acs.nanolett.6b01914. https://www.osti.gov/servlets/purl/1388841.
@article{osti_1388841,
title = {Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics},
author = {Jariwala, Deep and Davoyan, Artur R. and Tagliabue, Giulia and Sherrott, Michelle C. and Wong, Joeson and Atwater, Harry A.},
abstractNote = {In this work we demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.},
doi = {10.1021/acs.nanolett.6b01914},
journal = {Nano Letters},
number = 9,
volume = 16,
place = {United States},
year = {Fri Aug 26 00:00:00 EDT 2016},
month = {Fri Aug 26 00:00:00 EDT 2016}
}
Web of Science
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