Enhancement of thermoelectric figure-of-merit at low temperatures by titanium substitution for hafnium in n-type half-Heuslers Hf0.75–xTixZr0.25NiSn0.99Sb0.01
Abstract
We report the effect of titanium (Ti) substitution for hafnium (Hf) on thermoelectric properties of (Hf, Zr)-based n-type half-Heuslers: Hf0.75–xTixZr0.25NiSn0.99Sb0.01, has been studied. The samples are made by arc melting followed by ball milling and hot pressing via the nanostructuring approach. A peak thermoelectric figure-of-merit (ZT) of ~1.0 is achieved at 500 °C in samples with a composition of Hf0.5Zr0.25Ti0.25NiSn0.99Sb0.01 due to a slight increase in carrier concentration and also a lower thermal conductivity caused by Ti. The ZT values below 500 °C of hot pressed Hf0.5Zr0.25Ti0.25NiSn0.99Sb0.01 samples are significantly higher than those of the same way prepared Hf0.75Zr0.25NiSn0.99Sb0.01 samples at each temperature, which are very much desired for mid-range temperature applications such as waste heat recovery in automobiles.
- Authors:
-
- Boston College, Chestnut Hill, MA (United States)
- Univ. of Tokyo (Japan)
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Publication Date:
- Research Org.:
- Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC); Boston College, Chestnut Hill, MA (United States); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1386803
- Grant/Contract Number:
- SC0001299; FG02-09ER46577; EE0004840
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nano Energy
- Additional Journal Information:
- Journal Volume: 2; Journal Issue: 1; Related Information: S3TEC partners with Massachusetts Institute of Technology (lead); Boston College; Oak Ridge National Laboratory; Rensselaer Polytechnic Institute; Journal ID: ISSN 2211-2855
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; solar (photovoltaic); solar (thermal); solid state lighting; phonons; thermal conductivity; thermoelectric; defects; mechanical behavior; charge transport; spin dynamics; materials and chemistry by design; optics, synthesis (novel materials); synthesis (self-assembly); synthesis (scalable processing); Half-Heuslers; nanostructuring; process; thermoelectrics
Citation Formats
Joshi, Giri, Dahal, Tulashi, Chen, Shuo, Wang, Hengzhi, Shiomi, Junichiro, Chen, Gang, and Ren, Zhifeng. Enhancement of thermoelectric figure-of-merit at low temperatures by titanium substitution for hafnium in n-type half-Heuslers Hf0.75–xTixZr0.25NiSn0.99Sb0.01. United States: N. p., 2012.
Web. doi:10.1016/j.nanoen.2012.07.020.
Joshi, Giri, Dahal, Tulashi, Chen, Shuo, Wang, Hengzhi, Shiomi, Junichiro, Chen, Gang, & Ren, Zhifeng. Enhancement of thermoelectric figure-of-merit at low temperatures by titanium substitution for hafnium in n-type half-Heuslers Hf0.75–xTixZr0.25NiSn0.99Sb0.01. United States. https://doi.org/10.1016/j.nanoen.2012.07.020
Joshi, Giri, Dahal, Tulashi, Chen, Shuo, Wang, Hengzhi, Shiomi, Junichiro, Chen, Gang, and Ren, Zhifeng. Wed .
"Enhancement of thermoelectric figure-of-merit at low temperatures by titanium substitution for hafnium in n-type half-Heuslers Hf0.75–xTixZr0.25NiSn0.99Sb0.01". United States. https://doi.org/10.1016/j.nanoen.2012.07.020. https://www.osti.gov/servlets/purl/1386803.
@article{osti_1386803,
title = {Enhancement of thermoelectric figure-of-merit at low temperatures by titanium substitution for hafnium in n-type half-Heuslers Hf0.75–xTixZr0.25NiSn0.99Sb0.01},
author = {Joshi, Giri and Dahal, Tulashi and Chen, Shuo and Wang, Hengzhi and Shiomi, Junichiro and Chen, Gang and Ren, Zhifeng},
abstractNote = {We report the effect of titanium (Ti) substitution for hafnium (Hf) on thermoelectric properties of (Hf, Zr)-based n-type half-Heuslers: Hf0.75–xTixZr0.25NiSn0.99Sb0.01, has been studied. The samples are made by arc melting followed by ball milling and hot pressing via the nanostructuring approach. A peak thermoelectric figure-of-merit (ZT) of ~1.0 is achieved at 500 °C in samples with a composition of Hf0.5Zr0.25Ti0.25NiSn0.99Sb0.01 due to a slight increase in carrier concentration and also a lower thermal conductivity caused by Ti. The ZT values below 500 °C of hot pressed Hf0.5Zr0.25Ti0.25NiSn0.99Sb0.01 samples are significantly higher than those of the same way prepared Hf0.75Zr0.25NiSn0.99Sb0.01 samples at each temperature, which are very much desired for mid-range temperature applications such as waste heat recovery in automobiles.},
doi = {10.1016/j.nanoen.2012.07.020},
journal = {Nano Energy},
number = 1,
volume = 2,
place = {United States},
year = {Wed Aug 08 00:00:00 EDT 2012},
month = {Wed Aug 08 00:00:00 EDT 2012}
}
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