Thermoelectric power factor enhancement with gate-all-around silicon nanowires
Abstract
The thermoelectric properties of gate-all-around silicon nanowires (Si NWs) are calculated to determine the potential for significant power factor enhancement. The Boltzmann transport equation and relaxation time approximation are employed to develop an electron transport model used to determine the field-effect mobility, electrical conductivity, Seebeck coefficient, and power factor for Si NWs with cross-sectional areas between 4 nm × 4 nm and 12 nm × 12 nm and a range of gate biases. Electrical conductivity for the gated Si NWs was much higher than that of doped Si due to the lack of ionized impurities and correspondingly greater carrier mobility. A significant increase in electrical conductivity with decreasing Si NW cross-sectional area was also observed due to a large increase in the average carrier density. For all Si NWs, the Seebeck coefficient was lower than that of doped bulk Si due to the different energy dependence between ionized impurity and phonon-mediated scattering processes. This decrease was also confirmed with Seebeck coefficient measurements of multigated Si NWs and n-type Si thin-films. Quantum confinement was also found to increase the Seebeck coefficient for <8 nm × 8 nm Si NWs and also at high charge densities. A maximum power factor of 6.8more »
- Authors:
-
- Univ. of California, Santa Barbara, CA (United States)
- Publication Date:
- Research Org.:
- Energy Frontier Research Centers (EFRC) (United States). Center for Energy Efficient Materials (CEEM)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1386383
- Grant/Contract Number:
- SC0001009
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 115; Journal Issue: 14; Related Information: CEEM partners with the University of California, Santa Barbara (lead); Purdue University; Los Alamos National Laboratory; National Renewable Energy Laboratory; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; solar (photovoltaic); solid state lighting; phonons; thermoelectric; bio-inspired; energy storage (including batteries and capacitors); electrodes - solar; defects; charge transport; materials and chemistry by design; optics; synthesis (novel materials); synthesis (self-assembly); synthesis (scalable processing)
Citation Formats
Curtin, Benjamin M., and Bowers, John E. Thermoelectric power factor enhancement with gate-all-around silicon nanowires. United States: N. p., 2014.
Web. doi:10.1063/1.4870962.
Curtin, Benjamin M., & Bowers, John E. Thermoelectric power factor enhancement with gate-all-around silicon nanowires. United States. https://doi.org/10.1063/1.4870962
Curtin, Benjamin M., and Bowers, John E. Wed .
"Thermoelectric power factor enhancement with gate-all-around silicon nanowires". United States. https://doi.org/10.1063/1.4870962. https://www.osti.gov/servlets/purl/1386383.
@article{osti_1386383,
title = {Thermoelectric power factor enhancement with gate-all-around silicon nanowires},
author = {Curtin, Benjamin M. and Bowers, John E.},
abstractNote = {The thermoelectric properties of gate-all-around silicon nanowires (Si NWs) are calculated to determine the potential for significant power factor enhancement. The Boltzmann transport equation and relaxation time approximation are employed to develop an electron transport model used to determine the field-effect mobility, electrical conductivity, Seebeck coefficient, and power factor for Si NWs with cross-sectional areas between 4 nm × 4 nm and 12 nm × 12 nm and a range of gate biases. Electrical conductivity for the gated Si NWs was much higher than that of doped Si due to the lack of ionized impurities and correspondingly greater carrier mobility. A significant increase in electrical conductivity with decreasing Si NW cross-sectional area was also observed due to a large increase in the average carrier density. For all Si NWs, the Seebeck coefficient was lower than that of doped bulk Si due to the different energy dependence between ionized impurity and phonon-mediated scattering processes. This decrease was also confirmed with Seebeck coefficient measurements of multigated Si NWs and n-type Si thin-films. Quantum confinement was also found to increase the Seebeck coefficient for <8 nm × 8 nm Si NWs and also at high charge densities. A maximum power factor of 6.8 × 10-3 W m-1 K-2 was calculated for the 6 nm × 6 nm Si NWs with typical Si/SiO2 interface roughness, which is 2–3 × those obtained experimentally for bulk Si. The power factor was also found to greatly depend on surface roughness, with a root-mean-square roughness of <0.8 nm necessary for power factor enhancement. An increase in $ZT$ may also be possible if a low thermal conductivity can be obtained with minimal surface roughness.},
doi = {10.1063/1.4870962},
journal = {Journal of Applied Physics},
number = 14,
volume = 115,
place = {United States},
year = {Wed Apr 09 00:00:00 EDT 2014},
month = {Wed Apr 09 00:00:00 EDT 2014}
}
Web of Science
Works referenced in this record:
Thermoelectric properties of electrically gated bismuth telluride nanowires
journal, February 2010
- Bejenari, I.; Kantser, V.; Balandin, A. A.
- Physical Review B, Vol. 81, Issue 7
Field-Effect Modulation of Thermoelectric Properties in Multigated Silicon Nanowires
journal, October 2013
- Curtin, Benjamin M.; Codecido, Emilio A.; Krämer, Stephan
- Nano Letters, Vol. 13, Issue 11
Effect of quantum-well structures on the thermoelectric figure of merit
journal, May 1993
- Hicks, L. D.; Dresselhaus, M. S.
- Physical Review B, Vol. 47, Issue 19, p. 12727-12731
Low-temperature electron mobility in Trigate SOI MOSFETs
journal, February 2006
- Colinge, J. -P.; Quinn, A. J.; Floyd, L.
- IEEE Electron Device Letters, Vol. 27, Issue 2
Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation
journal, August 2008
- Lenzi, Marco; Palestri, Pierpaolo; Gnani, Elena
- IEEE Transactions on Electron Devices, Vol. 55, Issue 8
Silicon nanowires as efficient thermoelectric materials
journal, January 2008
- Boukai, Akram I.; Bunimovich, Yuri; Tahir-Kheli, Jamil
- Nature, Vol. 451, Issue 7175, p. 168-171
Power Factor Enhancement by Modulation Doping in Bulk Nanocomposites
journal, June 2011
- Zebarjadi, Mona; Joshi, Giri; Zhu, Gaohua
- Nano Letters, Vol. 11, Issue 6
Large Thermoelectric Power Factor Enhancement Observed in InAs Nanowires
journal, August 2013
- Wu, Phillip M.; Gooth, Johannes; Zianni, Xanthippi
- Nano Letters, Vol. 13, Issue 9
Temperature and size dependences of electrostatics and mobility in gate-all-around MOSFET devices
journal, December 2010
- Barraud, S.; Sarrazin, E.; Bournel, A.
- Semiconductor Science and Technology, Vol. 26, Issue 2
Surface roughness scattering model for arbitrarily oriented silicon nanowires
journal, October 2011
- Tienda-Luna, Isabel M.; Ruiz, F. G.; Godoy, A.
- Journal of Applied Physics, Vol. 110, Issue 8
Calculated thermoelectric properties of In x Ga 1−x N, In x Al 1−x N, and Al x Ga 1−x N
journal, May 2013
- Sztein, Alexander; Haberstroh, John; Bowers, John E.
- Journal of Applied Physics, Vol. 113, Issue 18
Quantum-mechanical effects in trigate SOI MOSFETs
journal, May 2006
- Colinge, J. -P.; Alderman, J. C.
- IEEE Transactions on Electron Devices, Vol. 53, Issue 5
Thermal conductivity of silicon nanowire arrays with controlled roughness
journal, December 2012
- Feser, Joseph P.; Sadhu, Jyothi S.; Azeredo, Bruno P.
- Journal of Applied Physics, Vol. 112, Issue 11
Enhanced thermoelectric performance of rough silicon nanowires
journal, January 2008
- Hochbaum, Allon I.; Chen, Renkun; Delgado, Raul Diaz
- Nature, Vol. 451, Issue 7175, p. 163-167
Electric-field-effect thermoelectrics
journal, September 2001
- Sandomirsky, V.; Butenko, A. V.; Levin, R.
- Journal of Applied Physics, Vol. 90, Issue 5
Simulation of Silicon Nanowire Transistors Using Boltzmann Transport Equation Under Relaxation Time Approximation
journal, January 2008
- Jin, Seonghoon; Tang, Ting-Wei; Fischetti, Massimo V.
- IEEE Transactions on Electron Devices, Vol. 55, Issue 3
Highly Ordered Vertical Silicon Nanowire Array Composite Thin Films for Thermoelectric Devices
journal, February 2012
- Curtin, Benjamin M.; Fang, Eugene W.; Bowers, John E.
- Journal of Electronic Materials, Vol. 41, Issue 5
Fabrication and Characterization of a Nanowire/Polymer-Based Nanocomposite for a Prototype Thermoelectric Device
journal, June 2004
- Abramson, A. R.; Kim, W. C.; Huxtable, S. T.
- Journal of Microelectromechanical Systems, Vol. 13, Issue 3
Convergence of electronic bands for high performance bulk thermoelectrics
journal, May 2011
- Pei, Yanzhong; Shi, Xiaoya; LaLonde, Aaron
- Nature, Vol. 473, Issue 7345, p. 66-69
Monte Carlo study of electron transport in silicon inversion layers
journal, July 1993
- Fischetti, M. V.; Laux, S. E.
- Physical Review B, Vol. 48, Issue 4
Quantifying Surface Roughness Effects on Phonon Transport in Silicon Nanowires
journal, April 2012
- Lim, Jongwoo; Hippalgaonkar, Kedar; Andrews, Sean C.
- Nano Letters, Vol. 12, Issue 5
Modeling and theoretical efficiency of a silicon nanowire based thermoelectric junction with area enhancement
journal, June 2012
- Seong, M.; Sadhu, J. S.; Ma, J.
- Journal of Applied Physics, Vol. 111, Issue 12
Lower limit to the thermal conductivity of disordered crystals
journal, September 1992
- Cahill, David G.; Watson, S. K.; Pohl, R. O.
- Physical Review B, Vol. 46, Issue 10, p. 6131-6140
Gate-Modulated Thermoelectric Power Factor of Hole Gas in Ge–Si Core–Shell Nanowires
journal, February 2013
- Moon, Jaeyun; Kim, Ji-Hun; Chen, Zack C. Y.
- Nano Letters, Vol. 13, Issue 3, p. 1196-1202
The Theory of Electronic Semi-Conductors
journal, October 1931
- Wilson, A. H.
- Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 133, Issue 822
Thermoelectric Properties of High-Doped Silicon from Room Temperature to 900 K
journal, March 2013
- Stranz, A.; Kähler, J.; Waag, A.
- Journal of Electronic Materials, Vol. 42, Issue 7
Phonon heat conduction in a semiconductor nanowire
journal, March 2001
- Zou, Jie; Balandin, Alexander
- Journal of Applied Physics, Vol. 89, Issue 5
Reduction of thermal conductivity in phononic nanomesh structures
journal, July 2010
- Yu, Jen-Kan; Mitrovic, Slobodan; Tham, Douglas
- Nature Nanotechnology, Vol. 5, Issue 10
Thermoelectric figure of merit of III-V semiconductor alloys
journal, June 2010
- Bahk, Je-Hyeong; Bian, Zhixi; Zebarjadi, Mona
- Physical Review B, Vol. 81, Issue 23
Enhancement of Thermoelectric Properties by Modulation-Doping in Silicon Germanium Alloy Nanocomposites
journal, January 2012
- Yu, Bo; Zebarjadi, Mona; Wang, Hui
- Nano Letters, Vol. 12, Issue 4, p. 2077-2082
Resonant carrier scattering by core-shell nanoparticles for thermoelectric power factor enhancement
journal, January 2012
- Bahk, Je-Hyeong; Santhanam, Parthiban; Bian, Zhixi
- Applied Physics Letters, Vol. 100, Issue 1
Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers
journal, November 1993
- Jungemann, Chr.; Emunds, A.; Engl, W. L.
- Solid-State Electronics, Vol. 36, Issue 11
Nanostructured Bulk Silicon as an Effective Thermoelectric Material
journal, August 2009
- Bux, Sabah K.; Blair, Richard G.; Gogna, Pawan K.
- Advanced Functional Materials, Vol. 19, Issue 15, p. 2445-2452
Effect of the electron-plasmon interaction on the electron mobility in silicon
journal, September 1991
- Fischetti, M. V.
- Physical Review B, Vol. 44, Issue 11
Effect of Nanoparticles on Electron and Thermoelectric Transport
journal, January 2009
- Zebarjadi, Mona; Esfarjani, Keivan; Shakouri, Ali
- Journal of Electronic Materials, Vol. 38, Issue 7
Thermoelectric characterization of Si thin films in silicon-on-insulator wafers
journal, September 1999
- Liao, C. N.; Chen, C.; Tu, K. N.
- Journal of Applied Physics, Vol. 86, Issue 6
Thermionic power generation at high temperatures using SiGe∕Si superlattices
journal, March 2007
- Vashaee, Daryoosh; Shakouri, Ali
- Journal of Applied Physics, Vol. 101, Issue 5
Electron transport in silicon nanowires: The role of acoustic phonon confinement and surface roughness scattering
journal, September 2008
- Ramayya, E. B.; Vasileska, D.; Goodnick, S. M.
- Journal of Applied Physics, Vol. 104, Issue 6
Evaluation of Seebeck coefficients in n- and p-type silicon nanowires fabricated by complementary metal–oxide–semiconductor technology
journal, September 2012
- Hyun, Younghoon; Park, Youngsam; Choi, Wonchul
- Nanotechnology, Vol. 23, Issue 40
Room-Temperature Quantum Confinement Effects in Transport Properties of Ultrathin Si Nanowire Field-Effect Transistors
journal, December 2011
- Yi, Kyung Soo; Trivedi, Krutarth; Floresca, Herman C.
- Nano Letters, Vol. 11, Issue 12
Quantitative Determination of Contributions to the Thermoelectric Power Factor in Si Nanostructures
journal, December 2010
- Ryu, Hyuk Ju; Aksamija, Z.; Paskiewicz, D. M.
- Physical Review Letters, Vol. 105, Issue 25
Phase-shift calculation of electron mobility in -type silicon at low temperatures
journal, August 1981
- Meyer, J. R.; Bartoli, F. J.
- Physical Review B, Vol. 24, Issue 4
Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity
journal, October 2007
- Jin, Seonghoon; Fischetti, Massimo V.; Tang, Ting-wei
- Journal of Applied Physics, Vol. 102, Issue 8
Assessment of room-temperature phonon-limited mobility in gated silicon nanowires
journal, June 2004
- Kotlyar, R.; Obradovic, B.; Matagne, P.
- Applied Physics Letters, Vol. 84, Issue 25
Thermoelectric properties of ultrathin silicon nanowires
journal, September 2012
- Ramayya, E. B.; Maurer, L. N.; Davoody, A. H.
- Physical Review B, Vol. 86, Issue 11
Effects of confinement and orientation on the thermoelectric power factor of silicon nanowires
journal, June 2011
- Neophytou, Neophytos; Kosina, Hans
- Physical Review B, Vol. 83, Issue 24
Works referencing / citing this record:
Directed energy interstellar propulsion of wafersats
conference, September 2015
- Brashears, Travis; Lubin, Philip; Hughes, Gary B.
- SPIE Optical Engineering + Applications, SPIE Proceedings