Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations
Abstract
The thermal interface conductance between Al and Si was simulated by a non-equilibrium molecular dynamics method. In the simulations, the coupling between electrons and phonons in Al are considered by using a stochastic force. The findings demonstrate the size dependence of the interface thermal conductance and the effect of electron–phonon coupling on the interface thermal conductance. To understand the mechanism of interface resistance, the vibration power spectra are calculated. We postulate that the atomic level disorder near the interface is an important aspect of interfacial phonon transport, which leads to a modification of the phonon states near the interface. There, the vibrational spectrum near the interface greatly differs from the bulk. This change in the vibrational spectrum affects the results predicted by AMM and DMM theories and indicates new physics is involved with phonon transport across interfaces.
- Authors:
-
- Tongji Univ., Shanghai (China); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Univ. of Notre Dame, IN (United States)
- Rutgers Univ., Piscataway, NJ (United States)
- Georgia Inst. of Technology, Atlanta, GA (United States)
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Univ. of Tokyo (Japan)
- Ecole Centrale Paris (CEA) (France)
- Tongji Univ., Shanghai (China); National Univ. of Singapore (Singapore)
- Publication Date:
- Research Org.:
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); Natural Science Foundation of China (NSFC)
- OSTI Identifier:
- 1385320
- Grant/Contract Number:
- SC0001299; FG02-09ER46577
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Computational and Theoretical Nanoscience
- Additional Journal Information:
- Journal Volume: 12; Journal Issue: 2; Related Information: S3TEC partners with Massachusetts Institute of Technology (lead); Boston College; Oak Ridge National Laboratory; Rensselaer Polytechnic Institute; Journal ID: ISSN 1546-1955
- Publisher:
- American Scientific Publishers
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; 74 ATOMIC AND MOLECULAR PHYSICS; ALUMINUM AND SILICON; ATOMIC LEVEL DISORDER; ELECTRON–PHONON COUPLINGS; MOLECULAR DYNAMICS; PHONONS; THERMAL INTERFACE CONDUCTANCE
Citation Formats
Yang, Nuo, Luo, Tengfei, Esfarjani, Keivan, Henry, Asegun, Tian, Zhiting, Shiomi, Junichiro, Chalopin, Yann, Li, Baowen, and Chen, Gang. Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations. United States: N. p., 2015.
Web. doi:10.1166/jctn.2015.3710.
Yang, Nuo, Luo, Tengfei, Esfarjani, Keivan, Henry, Asegun, Tian, Zhiting, Shiomi, Junichiro, Chalopin, Yann, Li, Baowen, & Chen, Gang. Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations. United States. https://doi.org/10.1166/jctn.2015.3710
Yang, Nuo, Luo, Tengfei, Esfarjani, Keivan, Henry, Asegun, Tian, Zhiting, Shiomi, Junichiro, Chalopin, Yann, Li, Baowen, and Chen, Gang. Sun .
"Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations". United States. https://doi.org/10.1166/jctn.2015.3710. https://www.osti.gov/servlets/purl/1385320.
@article{osti_1385320,
title = {Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations},
author = {Yang, Nuo and Luo, Tengfei and Esfarjani, Keivan and Henry, Asegun and Tian, Zhiting and Shiomi, Junichiro and Chalopin, Yann and Li, Baowen and Chen, Gang},
abstractNote = {The thermal interface conductance between Al and Si was simulated by a non-equilibrium molecular dynamics method. In the simulations, the coupling between electrons and phonons in Al are considered by using a stochastic force. The findings demonstrate the size dependence of the interface thermal conductance and the effect of electron–phonon coupling on the interface thermal conductance. To understand the mechanism of interface resistance, the vibration power spectra are calculated. We postulate that the atomic level disorder near the interface is an important aspect of interfacial phonon transport, which leads to a modification of the phonon states near the interface. There, the vibrational spectrum near the interface greatly differs from the bulk. This change in the vibrational spectrum affects the results predicted by AMM and DMM theories and indicates new physics is involved with phonon transport across interfaces.},
doi = {10.1166/jctn.2015.3710},
journal = {Journal of Computational and Theoretical Nanoscience},
number = 2,
volume = 12,
place = {United States},
year = {Sun Feb 01 00:00:00 EST 2015},
month = {Sun Feb 01 00:00:00 EST 2015}
}
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Works referencing / citing this record:
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