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Title: Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice

Abstract

We have measured here the lifetimes of two zone-center longitudinal acoustic phonon modes, at 320 and 640 GHz, in a 14 nm GaAs/2 nm AlAs superlattice structure. By comparing measurements at 296 and 79 K we separate the intrinsic contribution to phonon lifetime determined by phonon–phonon scattering from the extrinsic contribution due to defects and interface roughness. At 296 K, the 320 GHz phonon lifetime has approximately equal contributions from intrinsic and extrinsic scattering, whilst at 640 GHz it is dominated by extrinsic effects. These measurements are compared with intrinsic and extrinsic scattering rates in the superlattice obtained from first-principles lattice dynamics calculations. The calculated room-temperature intrinsic lifetime of longitudinal phonons at 320 GHz is in agreement with the experimentally measured value of 0.9 ns. The model correctly predicts the transition from predominantly intrinsic to predominantly extrinsic scattering; however the predicted transition occurs at higher frequencies. Our analysis indicates that the 'interfacial atomic disorder' model is not entirely adequate and that the observed frequency dependence of the extrinsic scattering rate is likely to be determined by a finite correlation length of interface roughness.

Authors:
 [1];  [2];  [2];  [2];  [2];  [2];  [2];  [2]
  1. Univ. of Oxford (United Kingdom); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Publication Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1382603
Grant/Contract Number:  
SC0001299; FG02-09ER46577; FG02-00ER15087
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Physics. Condensed Matter
Additional Journal Information:
Journal Volume: 25; Journal Issue: 29; Journal ID: ISSN 0953-8984
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Hofmann, F., Garg, J., Maznev, A. A., Jandl, A., Bulsara, M., Fitzgerald, E. A., Chen, G., and Nelson, K. A. Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice. United States: N. p., 2013. Web. doi:10.1088/0953-8984/25/29/295401.
Hofmann, F., Garg, J., Maznev, A. A., Jandl, A., Bulsara, M., Fitzgerald, E. A., Chen, G., & Nelson, K. A. Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice. United States. doi:10.1088/0953-8984/25/29/295401.
Hofmann, F., Garg, J., Maznev, A. A., Jandl, A., Bulsara, M., Fitzgerald, E. A., Chen, G., and Nelson, K. A. Tue . "Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice". United States. doi:10.1088/0953-8984/25/29/295401. https://www.osti.gov/servlets/purl/1382603.
@article{osti_1382603,
title = {Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice},
author = {Hofmann, F. and Garg, J. and Maznev, A. A. and Jandl, A. and Bulsara, M. and Fitzgerald, E. A. and Chen, G. and Nelson, K. A.},
abstractNote = {We have measured here the lifetimes of two zone-center longitudinal acoustic phonon modes, at 320 and 640 GHz, in a 14 nm GaAs/2 nm AlAs superlattice structure. By comparing measurements at 296 and 79 K we separate the intrinsic contribution to phonon lifetime determined by phonon–phonon scattering from the extrinsic contribution due to defects and interface roughness. At 296 K, the 320 GHz phonon lifetime has approximately equal contributions from intrinsic and extrinsic scattering, whilst at 640 GHz it is dominated by extrinsic effects. These measurements are compared with intrinsic and extrinsic scattering rates in the superlattice obtained from first-principles lattice dynamics calculations. The calculated room-temperature intrinsic lifetime of longitudinal phonons at 320 GHz is in agreement with the experimentally measured value of 0.9 ns. The model correctly predicts the transition from predominantly intrinsic to predominantly extrinsic scattering; however the predicted transition occurs at higher frequencies. Our analysis indicates that the 'interfacial atomic disorder' model is not entirely adequate and that the observed frequency dependence of the extrinsic scattering rate is likely to be determined by a finite correlation length of interface roughness.},
doi = {10.1088/0953-8984/25/29/295401},
journal = {Journal of Physics. Condensed Matter},
number = 29,
volume = 25,
place = {United States},
year = {2013},
month = {7}
}

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