skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Study of the Thermoelectric Properties of Lead Selenide Doped with Boron, Gallium, Indium, or Thallium

Abstract

Group IIIA elements (B, Ga, In, and Tl) have been doped into PbSe for enhancement of thermoelectric properties. The electrical conductivity, Seebeck coefficient, and thermal conductivity were systematically studied here. Room-temperature Hall measurements showed an effective increase in the electron concentration upon both Ga and In doping and the hole concentration upon Tl doping to ~7 × 10 19 cm –3. No resonant doping phenomenon was observed when PbSe was doped with B, Ga, or In. The highest room-temperature power factor ~2.5 × 10 –3 W m –1 K –2 was obtained for PbSe doped with 2 atom % B. However, the power factor in B-doped samples decreased with increasing temperature, opposite to the trend for the other dopants. A figure of merit (ZT) of ~1.2 at ~873 K was achieved in PbSe doped with 0.5 atom % Ga or In. With Tl doping, modification of the band structure around the Fermi level helped to increase the Seebeck coefficient, and the lattice thermal conductivity decreased, probably as a result of effective phonon scattering by both the heavy Tl 3+ ions and the increased grain boundary density after ball milling. The highest p-type ZT value was ~1.0 at ~723 K.

Authors:
 [1];  [1];  [1];  [1];  [2];  [1];  [1];  [3];  [3];  [2];  [1]
  1. Boston College, Chestnut Hill, MA (United States). Dept. of Physics
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Mechanical Engineering
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
Publication Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1382354
Grant/Contract Number:  
SC0001299
Resource Type:
Accepted Manuscript
Journal Name:
Journal of the American Chemical Society
Additional Journal Information:
Journal Volume: 134; Journal Issue: 42; Journal ID: ISSN 0002-7863
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Zhang, Qian, Cao, Feng, Lukas, Kevin, Liu, Weishu, Esfarjani, Keivan, Opeil, Cyril, Broido, David, Parker, David, Singh, David J., Chen, Gang, and Ren, Zhifeng. Study of the Thermoelectric Properties of Lead Selenide Doped with Boron, Gallium, Indium, or Thallium. United States: N. p., 2012. Web. doi:10.1021/ja307910u.
Zhang, Qian, Cao, Feng, Lukas, Kevin, Liu, Weishu, Esfarjani, Keivan, Opeil, Cyril, Broido, David, Parker, David, Singh, David J., Chen, Gang, & Ren, Zhifeng. Study of the Thermoelectric Properties of Lead Selenide Doped with Boron, Gallium, Indium, or Thallium. United States. doi:10.1021/ja307910u.
Zhang, Qian, Cao, Feng, Lukas, Kevin, Liu, Weishu, Esfarjani, Keivan, Opeil, Cyril, Broido, David, Parker, David, Singh, David J., Chen, Gang, and Ren, Zhifeng. Mon . "Study of the Thermoelectric Properties of Lead Selenide Doped with Boron, Gallium, Indium, or Thallium". United States. doi:10.1021/ja307910u. https://www.osti.gov/servlets/purl/1382354.
@article{osti_1382354,
title = {Study of the Thermoelectric Properties of Lead Selenide Doped with Boron, Gallium, Indium, or Thallium},
author = {Zhang, Qian and Cao, Feng and Lukas, Kevin and Liu, Weishu and Esfarjani, Keivan and Opeil, Cyril and Broido, David and Parker, David and Singh, David J. and Chen, Gang and Ren, Zhifeng},
abstractNote = {Group IIIA elements (B, Ga, In, and Tl) have been doped into PbSe for enhancement of thermoelectric properties. The electrical conductivity, Seebeck coefficient, and thermal conductivity were systematically studied here. Room-temperature Hall measurements showed an effective increase in the electron concentration upon both Ga and In doping and the hole concentration upon Tl doping to ~7 × 1019 cm–3. No resonant doping phenomenon was observed when PbSe was doped with B, Ga, or In. The highest room-temperature power factor ~2.5 × 10–3 W m–1 K–2 was obtained for PbSe doped with 2 atom % B. However, the power factor in B-doped samples decreased with increasing temperature, opposite to the trend for the other dopants. A figure of merit (ZT) of ~1.2 at ~873 K was achieved in PbSe doped with 0.5 atom % Ga or In. With Tl doping, modification of the band structure around the Fermi level helped to increase the Seebeck coefficient, and the lattice thermal conductivity decreased, probably as a result of effective phonon scattering by both the heavy Tl3+ ions and the increased grain boundary density after ball milling. The highest p-type ZT value was ~1.0 at ~723 K.},
doi = {10.1021/ja307910u},
journal = {Journal of the American Chemical Society},
number = 42,
volume = 134,
place = {United States},
year = {2012},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 44 works
Citation information provided by
Web of Science

Save / Share: