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Title: Gallium arsenide thermal conductivity and optical phonon relaxation times from first-principles calculations

Abstract

Thermal conductivity of crystalline GaAs is calculated using first-principles lattice dynamics. The harmonic and cubic force constants are obtained by fitting them to the force-displacement data from density functional theory calculations. Phonon dispersion is calculated from a dynamical matrix constructed using the harmonic force constants and phonon relaxation times are calculated using Fermi's Golden rule. The calculated GaAs thermal conductivity agrees well with experimental data. Thermal conductivity accumulations as a function of the phonon mean free path and as a function of the wavelength are obtained. Our results predict a significant size effect on the GaAs thermal conductivity in the nanoscale. Relaxation times of optical phonons and their contributions from different scattering channels are also studied. Such information will help the understanding of hot phonon effects in GaAs-based devices.

Authors:
 [1];  [2];  [3];  [2];  [2]
  1. Univ. of Notre Dame, IN (United States). Aerospace and Mechanical Engineering
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Mechanical Engineering
  3. Univ. of Tokyo (Japan). Mechanical Engineering
Publication Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1381947
Grant/Contract Number:  
SC0001299
Resource Type:
Accepted Manuscript
Journal Name:
Europhysics Letters
Additional Journal Information:
Journal Volume: 101; Journal Issue: 1; Journal ID: ISSN 0295-5075
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Luo, Tengfei, Garg, Jivtesh, Shiomi, Junichiro, Esfarjani, Keivan, and Chen, Gang. Gallium arsenide thermal conductivity and optical phonon relaxation times from first-principles calculations. United States: N. p., 2013. Web. doi:10.1209/0295-5075/101/16001.
Luo, Tengfei, Garg, Jivtesh, Shiomi, Junichiro, Esfarjani, Keivan, & Chen, Gang. Gallium arsenide thermal conductivity and optical phonon relaxation times from first-principles calculations. United States. doi:10.1209/0295-5075/101/16001.
Luo, Tengfei, Garg, Jivtesh, Shiomi, Junichiro, Esfarjani, Keivan, and Chen, Gang. Thu . "Gallium arsenide thermal conductivity and optical phonon relaxation times from first-principles calculations". United States. doi:10.1209/0295-5075/101/16001. https://www.osti.gov/servlets/purl/1381947.
@article{osti_1381947,
title = {Gallium arsenide thermal conductivity and optical phonon relaxation times from first-principles calculations},
author = {Luo, Tengfei and Garg, Jivtesh and Shiomi, Junichiro and Esfarjani, Keivan and Chen, Gang},
abstractNote = {Thermal conductivity of crystalline GaAs is calculated using first-principles lattice dynamics. The harmonic and cubic force constants are obtained by fitting them to the force-displacement data from density functional theory calculations. Phonon dispersion is calculated from a dynamical matrix constructed using the harmonic force constants and phonon relaxation times are calculated using Fermi's Golden rule. The calculated GaAs thermal conductivity agrees well with experimental data. Thermal conductivity accumulations as a function of the phonon mean free path and as a function of the wavelength are obtained. Our results predict a significant size effect on the GaAs thermal conductivity in the nanoscale. Relaxation times of optical phonons and their contributions from different scattering channels are also studied. Such information will help the understanding of hot phonon effects in GaAs-based devices.},
doi = {10.1209/0295-5075/101/16001},
journal = {Europhysics Letters},
number = 1,
volume = 101,
place = {United States},
year = {2013},
month = {1}
}

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