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Title: Cs diffusion in SiC high-energy grain boundaries

Authors:
 [1];  [1]; ORCiD logo [1]
  1. Department of Material Science and Engineering, University of Wisconsin-Madison, Wisconsin 53706, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1380063
Grant/Contract Number:  
No.12-2988
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 122 Journal Issue: 10; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Ko, Hyunseok, Szlufarska, Izabela, and Morgan, Dane. Cs diffusion in SiC high-energy grain boundaries. United States: N. p., 2017. Web. doi:10.1063/1.4989389.
Ko, Hyunseok, Szlufarska, Izabela, & Morgan, Dane. Cs diffusion in SiC high-energy grain boundaries. United States. doi:10.1063/1.4989389.
Ko, Hyunseok, Szlufarska, Izabela, and Morgan, Dane. Thu . "Cs diffusion in SiC high-energy grain boundaries". United States. doi:10.1063/1.4989389.
@article{osti_1380063,
title = {Cs diffusion in SiC high-energy grain boundaries},
author = {Ko, Hyunseok and Szlufarska, Izabela and Morgan, Dane},
abstractNote = {},
doi = {10.1063/1.4989389},
journal = {Journal of Applied Physics},
number = 10,
volume = 122,
place = {United States},
year = {2017},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4989389

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