Cs diffusion in SiC high-energy grain boundaries
- Authors:
-
[1]
- Department of Material Science and Engineering, University of Wisconsin-Madison, Wisconsin 53706, USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1380063
- Grant/Contract Number:
- No.12-2988
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Name: Journal of Applied Physics Journal Volume: 122 Journal Issue: 10; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Ko, Hyunseok, Szlufarska, Izabela, and Morgan, Dane. Cs diffusion in SiC high-energy grain boundaries. United States: N. p., 2017.
Web. doi:10.1063/1.4989389.
Ko, Hyunseok, Szlufarska, Izabela, & Morgan, Dane. Cs diffusion in SiC high-energy grain boundaries. United States. https://doi.org/10.1063/1.4989389
Ko, Hyunseok, Szlufarska, Izabela, and Morgan, Dane. Thu .
"Cs diffusion in SiC high-energy grain boundaries". United States. https://doi.org/10.1063/1.4989389.
@article{osti_1380063,
title = {Cs diffusion in SiC high-energy grain boundaries},
author = {Ko, Hyunseok and Szlufarska, Izabela and Morgan, Dane},
abstractNote = {},
doi = {10.1063/1.4989389},
journal = {Journal of Applied Physics},
number = 10,
volume = 122,
place = {United States},
year = {2017},
month = {9}
}
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