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Title: Cs diffusion in SiC high-energy grain boundaries

Authors:
 [1] ;  [1] ; ORCiD logo [1]
  1. Department of Material Science and Engineering, University of Wisconsin-Madison, Wisconsin 53706, USA
Publication Date:
Grant/Contract Number:
No.12-2988
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 122; Journal Issue: 10; Related Information: CHORUS Timestamp: 2018-02-14 19:42:08; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1380063

Ko, Hyunseok, Szlufarska, Izabela, and Morgan, Dane. Cs diffusion in SiC high-energy grain boundaries. United States: N. p., Web. doi:10.1063/1.4989389.
Ko, Hyunseok, Szlufarska, Izabela, & Morgan, Dane. Cs diffusion in SiC high-energy grain boundaries. United States. doi:10.1063/1.4989389.
Ko, Hyunseok, Szlufarska, Izabela, and Morgan, Dane. 2017. "Cs diffusion in SiC high-energy grain boundaries". United States. doi:10.1063/1.4989389.
@article{osti_1380063,
title = {Cs diffusion in SiC high-energy grain boundaries},
author = {Ko, Hyunseok and Szlufarska, Izabela and Morgan, Dane},
abstractNote = {},
doi = {10.1063/1.4989389},
journal = {Journal of Applied Physics},
number = 10,
volume = 122,
place = {United States},
year = {2017},
month = {9}
}