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Title: Growth of strontium ruthenate films by hybrid molecular beam epitaxy

Abstract

We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues encountered in traditional molecular beam epitaxy that uses elemental metal sources. Phase-pure, epitaxial thin films of Sr2RuO4 are obtained. At high substrate temperatures, growth proceeds in a layer-by-layer mode with intensity oscillations observed in reflection high-energy electron diffraction. Films are of high structural quality, as documented by x-ray diffraction, atomic force microscopy, and transmission electron microscopy. In conclusion, the method should be suitable for the growth of other complex oxides containing ruthenium, opening up opportunities to investigate thin films that host rich exotic ground states.

Authors:
 [1];  [1];  [1];  [1]
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  1. Univ. of California, Santa Barbara, CA (United States). Materials Dept.
Publication Date:
Research Org.:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org.:
USDOE; US Army Research Office (ARO); Defense Advanced Research Projects Agency (DARPA); Microelectronics Advanced Research Corporation (MARCO)
OSTI Identifier:
1429372
Alternate Identifier(s):
OSTI ID: 1380001
Grant/Contract Number:  
FG02-02ER45994; W911NF-16-1-0361
Resource Type:
Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 5; Journal Issue: 9; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; materials; metals; microscopy; diffraction optics; metallurgy; solid state chemistry; atomic force microscopy; light diffraction; chemical analysis; transition metals

Citation Formats

Marshall, Patrick B., Kim, Honggyu, Ahadi, Kaveh, and Stemmer, Susanne. Growth of strontium ruthenate films by hybrid molecular beam epitaxy. United States: N. p., 2017. Web. doi:10.1063/1.4998772.
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Marshall, Patrick B., Kim, Honggyu, Ahadi, Kaveh, & Stemmer, Susanne. Growth of strontium ruthenate films by hybrid molecular beam epitaxy. United States. https://doi.org/10.1063/1.4998772
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Marshall, Patrick B., Kim, Honggyu, Ahadi, Kaveh, and Stemmer, Susanne. Fri . "Growth of strontium ruthenate films by hybrid molecular beam epitaxy". United States. https://doi.org/10.1063/1.4998772. https://www.osti.gov/servlets/purl/1429372.
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@article{osti_1429372,
title = {Growth of strontium ruthenate films by hybrid molecular beam epitaxy},
author = {Marshall, Patrick B. and Kim, Honggyu and Ahadi, Kaveh and Stemmer, Susanne},
abstractNote = {We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues encountered in traditional molecular beam epitaxy that uses elemental metal sources. Phase-pure, epitaxial thin films of Sr2RuO4 are obtained. At high substrate temperatures, growth proceeds in a layer-by-layer mode with intensity oscillations observed in reflection high-energy electron diffraction. Films are of high structural quality, as documented by x-ray diffraction, atomic force microscopy, and transmission electron microscopy. In conclusion, the method should be suitable for the growth of other complex oxides containing ruthenium, opening up opportunities to investigate thin films that host rich exotic ground states.},
doi = {10.1063/1.4998772},
journal = {APL Materials},
number = 9,
volume = 5,
place = {United States},
year = {Fri Sep 01 00:00:00 EDT 2017},
month = {Fri Sep 01 00:00:00 EDT 2017}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1063/1.4998772
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Cited by: 11 works
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Figures / Tables:

FIG. 1 FIG. 1: Evolution of RHEED patterns with varying stoichiometry of the Sr2RuO4 films. From left to right, the strontium effusion cell temperature was set at 480 °C (Sr-deficient), 488 °C (stoichiometric), and 498 °C (Sr-rich), with the RuO4-containing flux held constant. The substrate temperature was maintained at 950 °C formore » all three films.« less
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    Works referencing / citing this record:

    Scaling growth rates for perovskite oxide virtual substrates on silicon
    journal, June 2019

    Pair suppression caused by mosaic-twist defects in superconducting Sr2RuO4 thin-films prepared using pulsed laser deposition
    journal, May 2020

    • Garcia, Carla Maria Palomares; Di Bernardo, Angelo; Kimbell, Graham
    • Communications Materials, Vol. 1, Issue 1
    • DOI: 10.1038/s43246-020-0026-1

    Synthesis science of SrRuO 3 and CaRuO 3 epitaxial films with high residual resistivity ratios
    journal, April 2018

    • Nair, Hari P.; Liu, Yang; Ruf, Jacob P.
    • APL Materials, Vol. 6, Issue 4
    • DOI: 10.1063/1.5023477

    Electronic and vibrational signatures of ruthenium vacancies in Sr 2 RuO 4 thin films
    journal, September 2019

    Scaling growth rates for perovskite oxide virtual substrates on silicon
    journal, June 2019

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      Figures / Tables found in this record:

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