skip to main content

DOE PAGESDOE PAGES

Title: Wide bandgap BaSnO 3 films with room temperature conductivity exceeding 10 4 S cm -1

Wide bandgap perovskite oxides with high room temperature conductivities and structural compatibility with a diverse family of organic/inorganic perovskite materials are of sign ificant interest as transparent conductors and as active components in power electronics. Such materials must also possess high room temperature mobility to minimize power consumption and to enable high-frequency applications. Here, we report n-type BaSnO 3 films grown using hybrid molecular beam epitaxy with room temperature conductivity exceeding 10 4 S cm -1 . Significantly, these films show room temperature mobilities up to 120 cm 2 V -1 s -1 even at carrier concentrations above 3 × 10 20 cm -3 together with a wide bandgap (3 eV). We examine the mobility-limiting scattering mechanisms by calculating temperature-dependent mobility, and Seebeck coefficient using the Boltzmann transport framework and ab-initio calculations. These results place perovskite oxide semiconductors for the first time on par with the highly successful III-N system, thereby bringing all-transparent, high-power oxide electronics operating at room temperature a step closer to reality.
Authors:
ORCiD logo [1] ;  [1] ;  [2] ;  [3] ;  [4] ; ORCiD logo [2] ;  [1]
  1. Univ. of Minnesota, Minneapolis, MN (United States). Chemical Engineering and Materials Science
  2. Washington Univ., St. Louis, MO (United States). Dept. of Energy, Environmental, and Chemical Engineering
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Nanyang Technological Univ. (Singapore). Energy Research Inst.
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Univ. of California, Berkeley, CA (United States). Materials Science and Engineering
Publication Date:
Grant/Contract Number:
AC02-05CH11231; AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 8; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; electronic devices; semiconductors; superconducting devices
OSTI Identifier:
1379840

Prakash, Abhinav, Xu, Peng, Faghaninia, Alireza, Shukla, Sudhanshu, Ager, Joel W., Lo, Cynthia S., and Jalan, Bharat. Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm-1. United States: N. p., Web. doi:10.1038/ncomms15167.
Prakash, Abhinav, Xu, Peng, Faghaninia, Alireza, Shukla, Sudhanshu, Ager, Joel W., Lo, Cynthia S., & Jalan, Bharat. Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm-1. United States. doi:10.1038/ncomms15167.
Prakash, Abhinav, Xu, Peng, Faghaninia, Alireza, Shukla, Sudhanshu, Ager, Joel W., Lo, Cynthia S., and Jalan, Bharat. 2017. "Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm-1". United States. doi:10.1038/ncomms15167. https://www.osti.gov/servlets/purl/1379840.
@article{osti_1379840,
title = {Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm-1},
author = {Prakash, Abhinav and Xu, Peng and Faghaninia, Alireza and Shukla, Sudhanshu and Ager, Joel W. and Lo, Cynthia S. and Jalan, Bharat},
abstractNote = {Wide bandgap perovskite oxides with high room temperature conductivities and structural compatibility with a diverse family of organic/inorganic perovskite materials are of sign ificant interest as transparent conductors and as active components in power electronics. Such materials must also possess high room temperature mobility to minimize power consumption and to enable high-frequency applications. Here, we report n-type BaSnO 3 films grown using hybrid molecular beam epitaxy with room temperature conductivity exceeding 10 4 S cm -1 . Significantly, these films show room temperature mobilities up to 120 cm 2 V -1 s -1 even at carrier concentrations above 3 × 10 20 cm -3 together with a wide bandgap (3 eV). We examine the mobility-limiting scattering mechanisms by calculating temperature-dependent mobility, and Seebeck coefficient using the Boltzmann transport framework and ab-initio calculations. These results place perovskite oxide semiconductors for the first time on par with the highly successful III-N system, thereby bringing all-transparent, high-power oxide electronics operating at room temperature a step closer to reality.},
doi = {10.1038/ncomms15167},
journal = {Nature Communications},
number = ,
volume = 8,
place = {United States},
year = {2017},
month = {5}
}

Works referenced in this record:

Generalized Gradient Approximation Made Simple
journal, October 1996
  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Interface takes charge over Si Oxide electronics
journal, March 2011
  • Schlom, Darrell G.; Mannhart, Jochen
  • Nature Materials, Vol. 10, Issue 3, p. 168-169
  • DOI: 10.1038/nmat2965

Ab initiomolecular dynamics for liquid metals
journal, January 1993

Self-Consistent Equations Including Exchange and Correlation Effects
journal, November 1965

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium
journal, May 1994