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Title: Local and transient nanoscale strain mapping during in situ deformation

The mobility of defects such as dislocations controls the mechanical properties of metals. This mobility is determined both by the characteristics of the defect and the material, as well as the local stress and strain applied to the defect. Therefore, the knowledge of the stress and strain during deformation at the scale of defects is important for understanding fundamental deformation mechanisms. In this paper, we demonstrate a method of measuring local stresses and strains during continuous in situ deformation with a resolution of a few nanometers using nanodiffraction strain mapping. Finally, our results demonstrate how large multidimensional data sets captured with high speed electron detectors can be analyzed in multiple ways after an in situ TEM experiment, opening the door for true multimodal analysis from a single electron scattering experiment.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [1] ;  [2]
  1. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
  3. Gatan, Inc., Pleasanton, CA (United States)
  4. Hysitron, Inc., Minneapolis, MN (United States)
Publication Date:
Grant/Contract Number:
AC02-05CH11231; 1235610; J3397
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 8; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC); National Science Foundation (NSF); Austrian Science Fund (Austria)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Strain measurement; Stress strain relations; Transmission electron microscopy; Shear deformation; Transient deformation
OSTI Identifier:
1379572
Alternate Identifier(s):
OSTI ID: 1307788