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Title: Robustness of magnetic and electric domains against charge carrier doping in multiferroic hexagonal ErMnO 3

We investigate the effect of chemical doping on the electric and magnetic domain pattern in multiferroic hexagonal ErMnO 3 . Hole- and electron doping are achieved through the growth of Er 1-x Ca x MnO 3 and Er 1-x Zr x MnO 3 single crystals, which allows for a controlled introduction of divalent and tetravalent ions, respectively. Using conductance measurements, piezoresponse force microscopy and nonlinear optics we study doping-related variations in the electronic transport and image the corrsponding ferroelectric and antiferromagnetic domains. We find that moderate doping levels allow for adjusting the electronic conduction properties of ErMnO 3 without destroying its characteristic domain patterns. Our findings demonstrate the feasibility of chemical doping for nonperturbative property-engineering of intrinsic domain states in this important class of multiferroics.
Authors:
 [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [1] ;  [1] ;  [1]
  1. ETH Zurich (Netherlands). Dept. of Materials
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Science Division
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Accepted Manuscript
Journal Name:
New Journal of Physics
Additional Journal Information:
Journal Volume: 18; Journal Issue: 4; Journal ID: ISSN 1367-2630
Publisher:
IOP Publishing
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; multiferroics; domain engineering; piezoresponse force microscopy; second harmonic generation
OSTI Identifier:
1379262

Hassanpour, E., Wegmayr, V., Schaab, J., Yan, Z., Bourret, E., Lottermoser, Th, Fiebig, M., and Meier, D.. Robustness of magnetic and electric domains against charge carrier doping in multiferroic hexagonal ErMnO 3. United States: N. p., Web. doi:10.1088/1367-2630/18/4/043015.
Hassanpour, E., Wegmayr, V., Schaab, J., Yan, Z., Bourret, E., Lottermoser, Th, Fiebig, M., & Meier, D.. Robustness of magnetic and electric domains against charge carrier doping in multiferroic hexagonal ErMnO 3. United States. doi:10.1088/1367-2630/18/4/043015.
Hassanpour, E., Wegmayr, V., Schaab, J., Yan, Z., Bourret, E., Lottermoser, Th, Fiebig, M., and Meier, D.. 2016. "Robustness of magnetic and electric domains against charge carrier doping in multiferroic hexagonal ErMnO 3". United States. doi:10.1088/1367-2630/18/4/043015. https://www.osti.gov/servlets/purl/1379262.
@article{osti_1379262,
title = {Robustness of magnetic and electric domains against charge carrier doping in multiferroic hexagonal ErMnO 3},
author = {Hassanpour, E. and Wegmayr, V. and Schaab, J. and Yan, Z. and Bourret, E. and Lottermoser, Th and Fiebig, M. and Meier, D.},
abstractNote = {We investigate the effect of chemical doping on the electric and magnetic domain pattern in multiferroic hexagonal ErMnO 3 . Hole- and electron doping are achieved through the growth of Er 1-x Ca x MnO 3 and Er 1-x Zr x MnO 3 single crystals, which allows for a controlled introduction of divalent and tetravalent ions, respectively. Using conductance measurements, piezoresponse force microscopy and nonlinear optics we study doping-related variations in the electronic transport and image the corrsponding ferroelectric and antiferromagnetic domains. We find that moderate doping levels allow for adjusting the electronic conduction properties of ErMnO 3 without destroying its characteristic domain patterns. Our findings demonstrate the feasibility of chemical doping for nonperturbative property-engineering of intrinsic domain states in this important class of multiferroics.},
doi = {10.1088/1367-2630/18/4/043015},
journal = {New Journal of Physics},
number = 4,
volume = 18,
place = {United States},
year = {2016},
month = {4}
}