Direct growth of single-crystalline III–V semiconductors on amorphous substrates
Abstract
The III-V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III-V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III-Vâ €™ s on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III-Vâ €™ s of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO 2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. The work presents an important advance towards universal integration of III-Vâ €™ s on application-specific substrates by direct growth.
- Authors:
-
more »
- Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
- Univ. of Southern California, Los Angeles, CA (United States)
- National Tsing Hua University, Hsinchu (Taiwan)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1255546
- Alternate Identifier(s):
- OSTI ID: 1379051
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Communications
- Additional Journal Information:
- Journal Volume: 7; Journal ID: ISSN 2041-1723
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Chen, Kevin, Kapadia, Rehan, Harker, Audrey, Desai, Sujay, Seuk Kang, Jeong, Chuang, Steven, Tosun, Mahmut, Sutter-Fella, Carolin M., Tsang, Michael, Zeng, Yuping, Kiriya, Daisuke, Hazra, Jubin, Madhvapathy, Surabhi Rao, Hettick, Mark, Chen, Yu-Ze, Mastandrea, James, Amani, Matin, Cabrini, Stefano, Chueh, Yu-Lun, Ager III, Joel W., Chrzan, Daryl C., and Javey, Ali. Direct growth of single-crystalline III–V semiconductors on amorphous substrates. United States: N. p., 2016.
Web. doi:10.1038/ncomms10502.
Chen, Kevin, Kapadia, Rehan, Harker, Audrey, Desai, Sujay, Seuk Kang, Jeong, Chuang, Steven, Tosun, Mahmut, Sutter-Fella, Carolin M., Tsang, Michael, Zeng, Yuping, Kiriya, Daisuke, Hazra, Jubin, Madhvapathy, Surabhi Rao, Hettick, Mark, Chen, Yu-Ze, Mastandrea, James, Amani, Matin, Cabrini, Stefano, Chueh, Yu-Lun, Ager III, Joel W., Chrzan, Daryl C., & Javey, Ali. Direct growth of single-crystalline III–V semiconductors on amorphous substrates. United States. https://doi.org/10.1038/ncomms10502
Chen, Kevin, Kapadia, Rehan, Harker, Audrey, Desai, Sujay, Seuk Kang, Jeong, Chuang, Steven, Tosun, Mahmut, Sutter-Fella, Carolin M., Tsang, Michael, Zeng, Yuping, Kiriya, Daisuke, Hazra, Jubin, Madhvapathy, Surabhi Rao, Hettick, Mark, Chen, Yu-Ze, Mastandrea, James, Amani, Matin, Cabrini, Stefano, Chueh, Yu-Lun, Ager III, Joel W., Chrzan, Daryl C., and Javey, Ali. Wed .
"Direct growth of single-crystalline III–V semiconductors on amorphous substrates". United States. https://doi.org/10.1038/ncomms10502. https://www.osti.gov/servlets/purl/1255546.
@article{osti_1255546,
title = {Direct growth of single-crystalline III–V semiconductors on amorphous substrates},
author = {Chen, Kevin and Kapadia, Rehan and Harker, Audrey and Desai, Sujay and Seuk Kang, Jeong and Chuang, Steven and Tosun, Mahmut and Sutter-Fella, Carolin M. and Tsang, Michael and Zeng, Yuping and Kiriya, Daisuke and Hazra, Jubin and Madhvapathy, Surabhi Rao and Hettick, Mark and Chen, Yu-Ze and Mastandrea, James and Amani, Matin and Cabrini, Stefano and Chueh, Yu-Lun and Ager III, Joel W. and Chrzan, Daryl C. and Javey, Ali},
abstractNote = {The III-V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III-V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III-Vâ €™ s on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III-Vâ €™ s of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO 2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. The work presents an important advance towards universal integration of III-Vâ €™ s on application-specific substrates by direct growth.},
doi = {10.1038/ncomms10502},
journal = {Nature Communications},
number = ,
volume = 7,
place = {United States},
year = {Wed Jan 27 00:00:00 EST 2016},
month = {Wed Jan 27 00:00:00 EST 2016}
}
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